Datasheet

AON7400A
30V N-Channel MOSFET
General Description
Product Summary
• The AON7400A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
high side switch in SMPS and general purpose
applications.
VDS
30V
40A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 7.5mΩ
RDS(ON) (at VGS = 4.5V)
< 10.5mΩ
• RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
Top View
DFN 3x3 EP
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
100
15
IDSM
TA=70°C
±20
28
IDM
TA=25°C
Units
V
40
ID
TC=100°C
Maximum
30
A
12
Avalanche Current C
IAS, IAR
27
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
36
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 4.0: August 2014
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
10
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
25
PD
TC=100°C
-55 to 150
Typ
30
60
4.2
°C
Max
40
75
5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7400A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
100
nA
1.97
2.5
V
6.2
7.5
9.4
11.3
VGS=4.5V, ID=20A
8.4
10.5
mΩ
1
V
30
A
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
55
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Units
V
1
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
920
1150
1380
pF
VGS=0V, VDS=15V, f=1MHz
125
180
235
pF
60
105
150
pF
VGS=0V, VDS=0V, f=1MHz
0.55
1.1
1.65
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16
20
24
nC
Qg(4.5V) Total Gate Charge
7.6
9.5
11.4
nC
2
2.7
3.2
nC
3
5
7
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
6.5
ns
2
ns
17
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
7
8.7
10.5
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
11
13.5
16
3.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4.0: August 2014
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Page 2 of 6
AON7400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
10V
5V
100
VDS=5V
4.5V
6V
80
60
4V
ID(A)
ID (A)
80
60
40
40
3.5V
20
20
VGS=3V
0
0
1
2
3
4
0
0.5
5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1.8
10
Normalized On-Resistance
12
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
8
6
VGS=10V
4
2
VGS=10V
ID=20A
1.6
1.4
17
VGS=4.5V
5
ID=20A
1.2
2
10
1
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
1.0E+02
ID=20A
1.0E+01
20
40
1.0E+00
15
IS (A)
RDS(ON) (mΩ)
25°C
125°C
125°C
10
125°C
25°C
1.0E-01
1.0E-02
1.0E-03
5
1.0E-04
25°C
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4.0: August 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=15V
ID=20A
1400
8
Ciss
Capacitance (pF)
VGS (Volts)
1200
6
4
1000
800
600
400
2
Coss
200
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
10µs
100.0
30
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.0
0.01
TJ(Max)=150°C
TC=25°C
160
0.1
1
Power (W)
10.0
0.1
17
5
2
10
120
80
40
10
100
0
0.0001
VDS (Volts)
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
10µs
RDS(ON)
limited
10
5
200
1000.0
ID (Amps)
Crss
0
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=5°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4.0: August 2014
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Page 4 of 6
AON7400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
Power Dissipation (W)
IAR (A) Peak Avalanche Current
TA=25°C
TA=150°C
TA=100°C
TA=125°C
25
20
15
10
5
0
10
1
10
100
0
1000
25
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
50
TA=25°C
40
1000
Power (W)
Current rating ID(A)
50
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
0
1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 4.0: August 2014
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Page 5 of 6
AON7400A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 4.0: August 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6