Datasheet

AON7412
30V N-Channel MOSFET
General Description
Product Summary
The AON7412 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
VDS
30V
16A
RDS(ON) (at VGS=10V)
< 20mΩ
RDS(ON) (at VGS =4.5V)
< 28mΩ
RDS(ON) (at VGS =4.0V)
< 32mΩ
100% UIS Tested
100% Rg Tested
Top View
DFN 3x3 EP
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: Nov. 2011
IAS
17
A
EAS
14
mJ
20.8
Steady-State
Steady-State
W
8.3
3.1
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
A
8
PDSM
TA=70°C
A
10
PD
TC=100°C
V
55
IDSM
TA=70°C
±25
12.5
IDM
TA=25°C
Continuous Drain
Current
Units
V
16
ID
TC=100°C
Maximum
30
-55 to 150
Typ
30
60
5
°C
Max
40
75
6
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7412
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
55
TJ=55°C
±100
nA
2
V
16.5
20
23
28
VGS=4.5V, ID=8A
22
28
VGS=4.0V, ID=7A
24
32
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=10A
25
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
Maximum Body-Diode Continuous Current
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
1.5
VGS=10V, ID=10A
IS
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
mΩ
S
1
V
16
A
466
pF
90
pF
61
VGS=0V, VDS=0V, f=1MHz
mΩ
pF
Ω
3.7
5.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.3
15
nC
Qg(4.5V) Total Gate Charge
4.3
8
nC
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=10A
1
nC
Qgd
Gate Drain Charge
2.3
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
8
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
20
ns
5
ns
IF=10A, dI/dt=500A/µs
7.5
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
9.8
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Nov. 2011
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Page 2 of 6
AON7412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
30
7V
VDS=5V
50
5V
25
40
4.5V
20
30
4V
20
ID(A)
ID (A)
10V
15
125°C
10
3.5V
5
10
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
40
2
3
4
5
1.6
Normalized On-Resistance
35
30
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.0V
25
20
VGS=4.5V
15
VGS=10V
10
VGS=10V
ID=10A
1.4
VGS17
=4.5V
ID=8A
1.2
1
5
2
10
VGS=4.0V
ID=7A
0.8
5
0
5
0
10
15
20
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+01
ID=10A
60
1.0E+00
40
40
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
125°C
125°C
1.0E-02
1.0E-03
25°C
20
1.0E-04
25°C
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Nov. 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=10A
700
8
Capacitance (pF)
VGS (Volts)
600
6
4
Ciss
500
400
300
Coss
200
2
100
0
Crss
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
200
100.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
10.0
10µs
160
100µs
1.0
DC
Power (W)
ID (Amps)
30
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=6°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Nov. 2011
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Page 4 of 6
AON7412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=150°C
10
TA=125°C
20
15
10
5
1
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
25
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
20
10000
15
1000
50
150
Power (W)
Current rating ID(A)
TA=25°C
10
17
5
2
10
100
10
5
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
150
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Nov. 2011
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Page 5 of 6
AON7412
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Nov. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6