Datasheet

AON7422E
30V N-Channel MOSFET
General Description
Product Summary
The AON7422E combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
VDS
30V
40A
RDS(ON) (at VGS=10V)
< 4.3mΩ
RDS(ON) (at VGS=4.5V)
< 6.0mΩ
ESD protected
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
V
A
200
20
IDSM
TA=70°C
±20
31
IDM
TA=25°C
Units
V
40
ID
TC=100°C
C
Maximum
30
A
16
Avalanche Current C
IAS, IAR
45
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
101
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 2.0: June 2014
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
14
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
36
PD
TC=100°C
-55 to 150
Typ
30
60
2.8
°C
Max
40
75
3.4
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7422E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36
VDS=30V, VGS=0V
Max
Units
V
1
µA
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±16V
5
uA
IGSS
Gate-Body leakage current
VDS=0V, VGS=± 20V
10
uA
TJ=55°C
5
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous CurrentG
VGS=10V, ID=20A
1.85
2.4
V
A
3.5
4.3
5.5
6.8
VGS=4.5V, ID=16A
4.5
6
mΩ
VDS=5V, ID=20A
85
IS=1A,VGS=0V
0.7
1
V
40
A
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
mΩ
S
1950
2445
2940
pF
270
390
510
pF
130
220
310
pF
1.2
2.4
3.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
32
41
50
nC
Qg(4.5V) Total Gate Charge
15
19
24
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
nC
7.2
nC
nC
Qgd
Gate Drain Charge
6.6
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
5
ns
tD(off)
Turn-Off DelayTime
41.5
ns
tf
Turn-Off Fall Time
10.5
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
17.5
22
31
40
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2.0: June 2014
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Page 2 of 6
AON7422E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
10V
4V
80
VDS=5V
3.5V
60
4.5V
ID(A)
ID (A)
60
40
3V
40
125°C
25°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
6
2
3
4
5
6
Normalized On-Resistance
2
5
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
4
3
VGS=10V
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
=4.5V
1.4
1.2
VGS
ID=16A
1
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
12
1.0E+02
ID=20A
1.0E+01
10
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
8
6
4
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
2
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2.0: June 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7422E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3600
VDS=15V
ID=20A
3200
2800
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2400
2000
1600
1200
Coss
800
2
400
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
10µs
RDS(ON)
limited
10µs
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
Power (W)
100.0
TJ(Max)=150°C
TC=25°C
120
17
5
2
10
80
30
40
1
10
100
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
160
VDS (Volts)
10
5
200
1000.0
ID (Amps)
Crss
0
Case (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.4°C/W
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2.0: June 2014
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Page 4 of 6
AON7422E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
10
TA=125°C
1
40
30
20
10
0
1
10
100
1000
0
25
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
50
75
125
150
10000
60
TA=25°C
50
1000
40
17
5
2
10
Power (W)
Current rating ID(A)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
30
20
10
10
0
0
25
50
75
100
125
1
0.00001
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.001
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2.0: June 2014
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Page 5 of 6
AON7422E
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 2.0: June 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6