Datasheet

AON7424
30V N-Channel MOSFET
General Description
Product Summary
The AON7424 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
VDS
30V
40A
RDS(ON) (at VGS=10V)
< 5.2mΩ
RDS(ON) (at VGS = 4.5V)
< 7.5mΩ
ESD protected
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current
Continuous Drain
Current
C
V
A
140
18
IDSM
TA=70°C
±20
31
IDM
TA=25°C
Units
V
40
ID
TC=100°C
Maximum
30
A
15
Avalanche Current C
IAS, IAR
45
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
101
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1: Mar 2010
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
14
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
36
PD
TC=100°C
-55 to 150
Typ
30
60
2.8
°C
Max
40
75
3.4
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
30
Units
V
VDS=30V, VGS=0V
1
TJ=55°C
µA
5
±10
µA
1.7
2.3
V
4.3
5.2
6.6
7.9
VGS=4.5V, ID=20A
6
7.5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
140
VGS=10V, ID=20A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
55
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
mΩ
mΩ
S
1
V
40
A
2280
2860
3450
pF
280
405
530
pF
180
300
420
pF
0.8
1.6
2.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
40
50
60
nC
Qg(4.5V) Total Gate Charge
17
22
26.5
nC
8
9.8
12
nC
5
8.4
12
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
7
ns
12
ns
36
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
10
13
10
16
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
22
28
34
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Mar 2010
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Page 2 of 6
AON7424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
100
10V
4.5V
VDS=5V
80
60
4V
ID(A)
ID (A)
60
3.5V
40
40
20
125°C
20
25°C
VGS=3V
0
0
0
1
2
3
4
0.5
5
1.5
2
2.5
3
3.5
4
4.5
1.8
Normalized On-Resistance
10
8
VGS=4.5V
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
4
VGS=10V
2
0
VGS=10V
ID=20A
1.6
1.4
VGS=4.5V
ID=20A
1.2
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
18
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
ID=20A
15
1.0E+01
12
1.0E+00
9
IS (A)
RDS(ON) (mΩ )
40
125°C
1.0E-01
125°C
25°C
1.0E-02
6
3
1.0E-03
25°C
1.0E-04
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Mar 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4500
VDS=15V
ID=20A
4000
3500
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
3000
2500
2000
1500
Coss
1000
2
500
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
50
ID (Amps)
RDS(ON)
limited
100µs
1ms
10ms
DC
1
0.1
160
10µs
Power (W)
10µs
100
10
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
TJ(Max)=150°C
TC=25°C
0.01
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
Crss
0
0
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.4°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Mar 2010
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Page 4 of 6
AON7424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
30
20
10
TA=125°C
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
50
10000
40
1000
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
Power (W)
Current rating ID(A)
TA=25°C
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
Zθ JA Normalized Transient
Thermal Resistance
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
0
18
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
0.001
150
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: Mar 2010
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Page 5 of 6
AON7424
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: Mar 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6