Datasheet

AON7428
30V N-Channel MOSFET
General Description
Product Summary
The AON7428 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection
applications.
ID (at VGS=10V)
30V
50A
RDS(ON) (at VGS=10V)
< 2.8mΩ
RDS(ON) (at VGS = 4.5V)
< 3.6mΩ
VDS
100% UIS Tested
100% Rg Tested
Top View
DFN 3.3x3.3 EP
Bottom
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current
C
V
A
250
34
IDSM
TA=70°C
±20
39
IDM
TA=25°C
Continuous Drain
Current
Units
V
50
ID
TC=100°C
Maximum
30
A
27
Avalanche Current C
IAR, IAS
50
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR, EAS
125
mJ
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 2: April 2011
6.2
Steady-State
Steady-State
RθJA
RθJC
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W
4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
-55 to 150
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7428
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36
VDS=30V, VGS=0V
Max
V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.1
ID(ON)
On state drain current
VGS=10V, VDS=5V
250
TJ=55°C
µA
5
VDS=0V, VGS= ±20V
100
VGS=10V, ID=20A
1.7
Units
2.3
nA
V
A
2.3
2.8
3.8
4.6
VGS=4.5V, ID=20A
2.9
3.6
mΩ
VDS=5V, ID=20A
100
1
V
50
A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
mΩ
S
2080
2600
3120
pF
300
430
560
pF
170
280
390
pF
1.7
3.5
5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
40
49
60
nC
Qg(4.5V) Total Gate Charge
20
24
30
nC
8
10
12
nC
8
11
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
5
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
7
ns
10
ns
58
ns
20
ns
14
18
22
30
37
45
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: April 2011
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Page 2 of 6
AON7428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
3.5V
VDS=5V
4V,6V,10V
120
120
3V
90
ID(A)
ID (A)
90
60
60
VGS=2.5V
30
0
1
2
3
4
5
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
3
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
4
Normalized On-Resistance
2
VGS=4.5V
RDS(ON) (mΩ )
25°C
0
0
3
2
VGS=10V
1
1.8
VGS=10V
ID=20A
1.6
17
5
2
VGS=4.5V10
1.4
1.2
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
8
ID=20A
7
1.0E+01
40
1.0E+00
5
IS (A)
6
RDS(ON) (mΩ )
125°C
30
125°C
1.0E-01
4
1.0E-02
3
1.0E-03
2
125°C
25°C
1.0E-04
25°C
1
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: April 2011
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
VDS=15V
ID=20A
8
3500
Capacitance (pF)
VGS (Volts)
3000
6
4
Ciss
2500
2000
1500
1000
2
Coss
500
0
Crss
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
400
1000.0
350
10µs
RDS(ON)
limited
10.0
10µs
100µs
1ms
DC
10ms
1.0
0.1
250
150
50
0.0
0.1
1
VDS (Volts)
10
0
0.0001
100
10
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
17
5
2
10
200
100
TJ(Max)=150°C
TC=25°C
0.01
TJ(Max)=150°C
TC=25°C
300
Power (W)
ID (Amps)
100.0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=1.5°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: April 2011
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Page 4 of 6
AON7428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
80
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
TA=125°C
70
60
50
40
30
20
10
0
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
60
25
50
75
125
150
10000
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
0.001
0.1
10
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
40
RθJA=55°C/W
0.1
0.01
PD
0.001
0.0001
0.0001
Single Pulse
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2: April 2011
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Page 5 of 6
AON7428
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 2: April 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6