Datasheet

AON7436
20V N-Channel MOSFET
General Description
Product Summary
The AON7436 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
VDS
20V
23A
RDS(ON) (at VGS=10V)
< 19mΩ
RDS(ON) (at VGS =4.5V)
< 22mΩ
RDS(ON) (at VGS =2.5V)
< 32mΩ
RDS(ON) (at VGS =1.8V)
< 50mΩ
100% Rg Tested
DFN 3x3A
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
TA=25°C
TA=70°C
Power Dissipation B
TC=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: August 2010
16.7
Steady-State
Steady-State
W
7
3.1
RθJA
RθJC
www.aosmd.com
W
2
TJ, TSTG
Symbol
t ≤ 10s
A
7
PDSM
TA=70°C
A
9
PD
TA=25°C
Power Dissipation A
V
50
IDSM
TC=25°C
±12
15
IDM
Continuous Drain
Current
Units
V
23
ID
TC=100°C
Maximum
20
-55 to 150
Typ
30
60
6.2
°C
Max
40
75
7.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7436
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
VGS=10V, ID=9A
TJ=125°C
100
±nA
0.75
1.1
V
15.5
19
22
27
A
17.5
22
mΩ
VGS=2.5V, ID=6A
23
32
mΩ
50
mΩ
VGS=1.8V, ID=2A
32
Forward Transconductance
VDS=5V, ID=9A
20
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
mΩ
VGS=4.5V, ID=7A
gFS
Coss
µA
5
Gate Threshold Voltage
Units
V
1
IGSS
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
S
1
V
15
A
420
525
630
pF
65
95
125
pF
45
75
105
pF
0.8
Ω
1.7
2.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12.5
15
Qg(4.5V) Total Gate Charge
6
VGS=10V, VDS=10V, ID=9A
nC
nC
Qgs
Gate Source Charge
1
nC
Qgd
Gate Drain Charge
2
nC
tD(on)
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=10V, RL=1.1Ω,
RGEN=3Ω
7.5
ns
20
ns
6
ns
trr
Body Diode Reverse Recovery Time
IF=9A, dI/dt=100A/µs
14
Qrr
Body Diode Reverse Recovery Charge IF=9A, dI/dt=100A/µs
6
17
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2010
www.aosmd.com
Page 2 of 6
AON7436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
10V
VDS=5V
4.5V
15
2.5V
ID(A)
ID (A)
30
20
10
1.8V
125°C
5
10
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
60
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
1
1.5
2
2.5
1.8
50
40
VGS=1.8V
30
VGS=2.5V
VGS=4.5V
20
VGS=10V
10
0
VGS=2.5V
ID=6A
1.6
VGS=4.5V
ID=7A
1.4
17
VGS=1.8V5
ID=2A 2
1.2
10
1
VGS=10V
ID=9A
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
45
1.0E+02
ID=9A
40
1.0E+01
35
1.0E+00
40
125°C
30
IS (A)
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
25
20
1.0E-02
15
1.0E-04
10
1.0E-05
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: August 2010
25°C
1.0E-03
25°C
0
125°C
1.0E-01
2
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=10V
ID=9A
800
Capacitance (pF)
VGS (Volts)
8
6
4
400
Coss
2
200
0
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
160
10µs
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
120
17
5
2
10
80
40
0
0.0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating18
Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
20
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
1.0
10
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
200
Power (W)
10.0
Crss
15
100.0
ID (Amps)
Ciss
600
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=7.5°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: August 2010
www.aosmd.com
Page 4 of 6
AON7436
25
25
20
20
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
15
10
5
5
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
1000
Power (W)
17
5
2
10
100
10
1
0.00001
0 1000
18
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: August 2010
www.aosmd.com
Page 5 of 6
AON7436
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: August 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6