MA111 Zener Diodes Composite Elements MA3100W Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 –0.3 +0.1 0.4 –0.05 1.45 0.65±0.15 1 0.5 0.95 2 3 Unit IF(AV) 100 mA Double IF(AV) 75 mA Single IFRM 200 mA Double IFRM 150 mA Single Ptot *1 150 mW Double Ptot *1 110 mW Non-repetitive reverse surge power dissipation PZSM*2 15 W Junction temperature Tj 125 ˚C Storage temperature Tstg – 55 to + 125 ˚C Average forward current Instanious forward current Total power dissipation Symbol +0.1 0.1 to 0.3 0.4±0.2 Parameter Condition Symbol min IF=10mA VF Zener voltage VZ*2 IZ= 5mA RZK IZ= 0.5mA RZ IZ= 5mA IR1 VR= 7V Reverse current IR2 VR= 8.9V Temperature coefficient of zener voltage SZ*3 IZ= 5mA Terminal capacitance Ct VR= 0V, f=1MHz 9.4 10W 1 3 2 typ max 0.8 0.9 10.0 10.6 V 130 Ω 8 4.5 Note 1. Rated input/output frequency : 5MHz 2. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application * 3 : Tj= 25 to 125˚C ■ Marking 4 1 Forward voltage Operating resistance 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) ■ Internal Connection *1 With a printed-circuit board *2 t=100µ s, Tj=125˚C ■ Electrical Characteristics (Ta= 25˚C)* 0.16 –0.06 0.8 1.1 –0.1 Rating Single 0 to 0.1 Parameter +0.2 ■ Absolute Maximum Ratings (Ta= 25˚C) 0.6 –0 0.2 +0.1 +0.1 0.4 –0.05 +0.2 wiring in parallel of MA3100 4 0.95 2.9 –0.05 1.9±0.2 type package (4-pin) ● Two-element 1.5 –0.05 0.5R ■ Features ● Mini +0.25 0.65±0.15 Unit V 20 Ω 0.2 µA 60 µA 6.4 8.0 mV/˚C 70 90 pF MA3100W Zener Diodes Composite Elements IF – V F VF – Ta IR – V R 10–8 1.6 1 Ta=150˚C 1.4 100˚C 25˚C 100˚C 10–9 10–2 10–3 IR (A) VF (V) –20˚C 1.2 1.0 IF=100mA 0.8 10mA 0.6 3mA Reverse current Ta=150˚C Forward voltage Forward curren IF (mA) 10–1 25˚C 10–10 10–11 0.4 10–12 10–4 0.2 10–5 0 0.2 0.4 0.6 0.8 1.0 0 –40 1.2 VF (V) Forward voltage 10–13 0 40 160 Ta 10–1 VR=7V 3V 1V (˚C) 10 6 8 10 12 VR (V) 103 RZ (R) 150˚C 10–3 10–4 102 10 1 10–5 1 0.1 –40 10–6 0 40 80 120 160 200 7 Ta (˚C) Ambient temperature 8 9 10 Zener voltage Ct – VR 11 12 13 VZ (V) 1000 PZSM (W) Ta=25˚C 80 PZSM t 100 Non-repetitive reverse surge power dissipation 60 40 20 0 0 2 4 6 Reverse voltage 8 10 VR (V) 12 Breakdown point (typ) 10 1 0.01 0.1 1 10 Pulse width tW (ms) 10–1 10–4 10–3 Zener current PZSM – tW 100 Ct (pF) 4 RZ – IZ Operating resistance Zener current 100 Ta=–20˚C 2 Reverse voltage 25˚C 100˚C 10–2 IZ (A) 1000 Terminal capacitance 0 200 IZ – VZ 10000 IR (nA) 120 Ambient temperature IR – Ta Reverse current 80 100 10–2 IZ (A) 10–1