AON7448 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AON7448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 80V 24A RDS(ON) (at VGS=10V) < 30mΩ RDS(ON) (at VGS = 8V) < 37mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View D Top View Bottom 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 76 7.1 IDSM TA=70°C ±25 15 IDM TA=25°C Units V 24 ID TC=100°C Maximum 80 A 5.7 Avalanche Current C IAS, IAR 25 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 31 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: April 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 15 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 36 PD TC=100°C -55 to 150 Typ 30 60 2.8 °C Max 40 75 3.4 Units °C/W °C/W °C/W Page 1 of 7 AON7448 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 80 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.9 ID(ON) On state drain current VGS=10V, VDS=5V 78 TJ=55°C 50 VDS=0V, VGS= ±25V 100 VGS=10V, ID=10A 3.5 25 30 44 53 VGS=8V, ID=10A 29 37 VDS=5V, ID=10A 16 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 4.1 VGS=10V, VDS=40V, ID=10A µA nA V A RDS(ON) TJ=125°C Units V VDS=80V, VGS=0V IDSS IS Max mΩ mΩ S 1 V 40 A pF 720 900 1100 75 110 150 pF 25 40 60 pF 0.4 0.8 1.2 Ω 11.5 14.5 17.5 nC 4.5 5.5 6.5 nC 2.8 4.6 6.5 nC 16 VGS=10V, VDS=40V, RL=4Ω, RGEN=3Ω ns 7.5 ns 36 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 10 15 20 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 30 43 56 7.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: April 2011 www.aosmd.com Page 2 of 7 AON7448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 10V 70 VDS=5V 8 40 7.5 60 50 7V 30 ID(A) ID (A) 50 8.5V 40 6.5 20 30 20 6V 10 VGS=5.5V 125°C 10 0 0 0 2 4 6 8 0 10 2 4 6 8 10 12 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 Normalized On-Resistance 2.2 VGS=8V 35 RDS(ON) (mΩ ) 25°C 30 VGS=10V 25 2 VGS=10V ID=10A 1.8 1.6 1.4 VGS=8V ID=10A 1.2 17 5 2 10 1 0.8 20 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 60 1.0E+02 ID=10A 1.0E+01 50 40 40 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 125°C 1.0E-01 1.0E-02 30 25°C 1.0E-03 20 25°C 1.0E-04 10 1.0E-05 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON7448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=40V ID=10A 1200 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1000 800 600 400 Coss 2 Crss 200 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 60 80 200 10µs 100.00 RDS(ON) limited 10.00 160 100µs DC 1ms 1.00 TJ(Max)=150°C TC=25°C 0.10 TJ(Max)=150°C TC=25°C 10µs Power (W) ID (Amps) 40 VDS (Volts) Figure 8: Capacitance Characteristics 1000.00 17 5 2 10 120 80 40 0.01 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=3.4°C/W 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: April 2011 www.aosmd.com Page 4 of 7 AON7448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=125°C 10 TA=150°C 40 30 20 10 1 0 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 0 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 30 TA=25°C 25 1000 Power (W) Current rating ID(A) 25 20 15 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 Zθ JA Normalized Transient Thermal Resistance 10 1000 0 18 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) 10 0.001 150 40 RθJA=75°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: April 2011 www.aosmd.com Page 5 of 7 AON7448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 15 25ºC Qrr 40 125ºC di/dt=800A/µs 1.2 25ºC trr 12 trr (ns) 60 1.6 16 Irm (A) 80 Qrr (nC) 20 125ºC di/dt=800A/µs 0.8 125ºC 10 25ºC 5 4 0 0 S 100 8 Irm 25ºC 20 S 0.4 125ºC 0 0 5 10 15 20 25 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 100 5 10 15 20 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25 30 2.5 Is=20A Is=20A 80 25 25 20 125ºC 2 125ºC 25ºC 40 10 125ºC Qrr 5 25ºC 0 200 400 600 1 25ºC 0.5 S 5 800 1000 0 0 0 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: April 2011 trr 125º 0 0 25ºC 10 20 Irm 1.5 15 S 15 trr (ns) 60 Irm (A) Qrr (nC) 20 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON7448 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: April 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7