Datasheet

AON7462
300V,2.5A N-Channel MOSFET
General Description
Product Summary
The AON7462 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be adopted
quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
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VDS
ID (at VGS=10V)
2.5A
RDS(ON) (at VGS=10V)
< 1.5Ω
100% UIS Tested!
100% Rg Tested!
DFN 3x3A_EP
Bottom View
Top View
D
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current
Avalanche Current
C
V
A
7.2
0.9
IDSM
TA=70°C
±30
1.6
IDM
TA=25°C
Continuous Drain
Current
Units
V
2.5
ID
TC=100°C
C
Maximum
300
A
0.7
IAR
1.4
A
Repetitive avalanche energy C
EAR
29
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B
TC=100°C
EAS
dv/dt
58
5
25
mJ
V/ns
W
10
W
PD
TA=25°C
Power Dissipation A
PDSM
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev0: Feb 2011
3.1
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
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W
2
-50 to 150
Typ
30
60
4.2
°C
Max
40
75
5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7462
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
300
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=5V ID=250µA
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
ISM
ID=250µA, VGS=0V, TJ=150°C
350
V
ID=250µA, VGS=0V
0.3
o
V/ C
VDS=300V, VGS=0V
1
VDS=240V, TJ=125°C
10
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
±100
4.2
4.5
nΑ
V
VGS=10V, ID=0.9A
1.2
1.5
Ω
VDS=40V, ID=0.9A
1.5
IS=1A,VGS=0V
0.8
1
V
2.5
A
9
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
µA
VGS=0V, VDS=25V, f=1MHz
3.5
S
155
197
240
pF
20
30
40
pF
2
VGS=0V, VDS=0V, f=1MHz
pF
1.9
3.8
5.7
Ω
3.5
4.6
5.6
nC
VGS=10V, VDS=240V, ID=0.9A
1.3
nC
Qgd
Gate Drain Charge
1.5
nC
tD(on)
Turn-On DelayTime
17
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=10V, VDS=150V, ID=0.9A,
RG=25Ω
8
ns
26
ns
13
IF=0.9A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=0.9A,dI/dt=100A/µs,VDS=100V
ns
62
95
125
0.14
0.22
0.3
ns
µC
2
A. The value of RθJA is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
Dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. L=60mH, IAS=1.4A, VDD=150V, RG=10Ω, Starting T J=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Feb 2011
www.aosmd.com
Page 2 of 6
AON7462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10
-55°C
VDS=40V
10V
125°C
6.5V
3
ID(A)
ID (A)
4
2
6.0V
1
VGS=5.5V
1
25°C
0
0.1
0
5
10
15
20
VDS (Volts)
Figure 1: On-Region Characteristics
25
2
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
3
Normalized On-Resistance
5.0
4.0
RDS(ON) (Ω)
4
VGS=10V
3.0
2.0
2.5
VGS=10V
ID=0.9A
2
1.5
1
0.5
1.0
0
2
4
6
0
-100
8
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.2
1.0E+00
40
1.1
IS (A)
BVDSS (Normalized)
-50
1
125°C
1.0E-01
25°C
1.0E-02
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
o
TJ ( C)
Figure 5: Break Down vs. Junction Temperature
Rev 0: Feb 2011
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
AON7462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=240V
ID=0.9A
12
9
6
Coss
10
Crss
1
3
0
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0.1
100
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
400
RDS(ON)
limited
10µs
1
100µs
0.1
1ms
10ms
DC
1
200
100
0.1s
TJ(Max)=150°C
TC=25°C
0.01
TJ(Max)=150°C
TC=25°C
300
Power (W)
10
ID (Amps)
100
10
100
1000
0
0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Feb 2011
www.aosmd.com
Page 4 of 6
AON7462
30
3.0
25
2.5
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
2.0
1.5
1.0
0.5
0
0.0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note B)
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
100
TJ(Max)=150°C
TA=25°C
Power (W)
80
60
40
20
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 0: Feb 2011
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Page 5 of 6
AON7462
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
Rg
+
VDC
90%
Vdd
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: Feb 2011
Vgs
Isd
L
+ Vdd
VDC
-
IF
trr
dI/dt
IRM
Vds
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Vdd
Page 6 of 6