Data Sheet

PMEG3015EV
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in
SOT666 package
Rev. 02 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in an ultra small SMD SOT666
plastic package.
1.2 Features
„
„
„
„
Forward current: 1.5 A
Reverse voltage: 30 V
Ultra low forward voltage
Ultra small SMD packages
1.3 Applications
„
„
„
„
„
Low voltage rectification
High efficiency DC-to-DC conversion
Voltage clamping
Inverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
IF
forward current
Tsp ≤ 55 °C
VR
reverse voltage
VF
forward voltage
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
IF = 1.5 A
Min
[1]
Typ
Max
Unit
-
-
1.5
A
-
-
30
V
-
480
550
mV
PMEG3015EV
NXP Semiconductors
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
cathode
3
anode
4
anode
5
cathode
6
cathode
Simplified outline
6
5
Symbol
4
1, 2
5, 6
3, 4
sym038
1
2
3
3. Ordering information
Table 3.
Ordering information
Type number
PMEG3015EV
Package
Name
Description
Version
-
plastic surface mounted package; 6 leads
SOT666
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG3015EV
1A
PMEG3015EV_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 February 2010
2 of 10
PMEG3015EV
NXP Semiconductors
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
-
30
V
VR
reverse voltage
IF
forward current
-
1.5
A
IFRM
repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25
[1]
-
4.5
A
IFSM
non-repetitive peak forward
current
tp = 8 ms; square
wave
[1]
-
9.5
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
0.31
W
[3]
-
0.58
W
Tsp ≤ 55 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
For SOT666 only valid, if pins 3 and 4 are connected in parallel.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm2.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from junction in free air
to ambient
Rth(j-sp)
Conditions
thermal resistance from junction
to solder point
Typ
Max
Unit
[3]
-
-
405
K/W
[4]
-
-
215
K/W
-
-
80
K/W
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm2.
PMEG3015EV_2
Product data sheet
Min
[1][2]
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 February 2010
3 of 10
PMEG3015EV
NXP Semiconductors
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
VF
IR
Cd
[1]
Parameter
Conditions
forward voltage
reverse current
diode capacitance
Min
Typ
Max
Unit
IF = 1 mA
[1]
-
125
160
mV
IF = 10 mA
[1]
-
185
220
mV
IF = 100 mA
[1]
-
255
290
mV
IF = 500 mA
[1]
-
340
380
mV
IF = 1 A
[1]
-
410
480
mV
IF = 1.5 A
[1]
-
480
550
mV
VR = 10 V
-
60
150
μA
VR = 30 V
-
400
1000
μA
VR = 1 V; f = 1 MHz
-
60
72
pF
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PMEG3015EV_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 February 2010
4 of 10
PMEG3015EV
NXP Semiconductors
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
006aaa079
104
IR
(mA)
IF
(mA)
006aaa075
103
(5)
102
(4)
103
(3)
10
102
1
(5)
(4)
(2)
(3)
(2)
10−1
(1)
10
10−2
(1)
10−3
1
10−4
10−5
10−1
0
0.2
0.4
0
0.6
4
8
VF (V)
(1) Tamb = −40 °C
16
20
24
28
32
VR (V)
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 85 °C
(3) Tamb = 85 °C
(4) Tamb = 125 °C
(4) Tamb = 125 °C
(5) Tamb = 150 °C
(5) Tamb = 150 °C
Fig 1.
12
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
006aaa076
120
Cd
(pF)
80
40
0
0
10
20
30
VR (V)
Tamb = 25 °C; f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG3015EV_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 February 2010
5 of 10
PMEG3015EV
NXP Semiconductors
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
8. Package outline
1.7
1.5
6
0.6
0.5
5
4
0.3
0.1
1.7
1.5
1.3
1.1
pin 1 index
1
2
3
0.27
0.17
0.5
0.18
0.08
1
Dimensions in mm
Fig 4.
04-11-08
Package outline SOT666
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
4000
PMEG3015EV
[1]
SOT666
4 mm pitch, 8 mm tape and reel
-115
For further information and the availability of packing methods, see Section 13.
PMEG3015EV_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 February 2010
6 of 10
PMEG3015EV
NXP Semiconductors
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
Ow1 = 0.550 OA (2x)
0.075
e = 1.000
Ow = 1.700 OA
Obw = Pbw = 2.000 OA
Pw = 0.400 (6x)
PI = 2.100
Obl = Pbl = 1.600 OA
Wt = 0.375 CU (4x)
OI = 2.450 OA
W/2 = 0.150 CU (4x)
OI1 = 2.750 OA
W = 0.300 CU (2x)
10. Soldering
SOLDER LANDS
SOLDER RESIST
OCCUPIED AREA
PLACEMENT AREA
Lb = 1.200 CU
La = 2.200 CU
La1 = 2.500 CU
MSD779
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 5.
Reflow soldering footprint SOT666
PMEG3015EV_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 February 2010
7 of 10
PMEG3015EV
NXP Semiconductors
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMEG3015EV_2
20100204
Product data sheet
-
PMEG3015EV_1
Modifications:
PMEG3015EV_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
20050404
Product data sheet
PMEG3015EV_2
Product data sheet
-
-
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 February 2010
8 of 10
PMEG3015EV
NXP Semiconductors
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMEG3015EV_2
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 February 2010
9 of 10
PMEG3015EV
NXP Semiconductors
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 February 2010
Document identifier: PMEG3015EV_2
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