SO D 123 W PMEG6010ELR 60 V, 1 A low leakage current Schottky barrier rectifier 3 June 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • • • Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 60 V Extremely low leakage current Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj ≤ 175 °C 3. Applications • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5; f = 20 kHz; Tsp ≤ 170 °C; - - 1 A VF forward voltage IF = 1 A; Tj = 25 °C - 605 660 mV IR reverse current VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02; - 90 300 nA square wave Tj = 25 °C; pulsed Scan or click this QR code to view the latest information for this product PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode [1] Simplified outline 1 Graphic symbol 2 SOD123W 1 2 sym001 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG6010ELR Package Name Description Version SOD123W plastic surface mounted package; 2 leads SOD123W 7. Marking Table 4. Marking codes Type number Marking code PMEG6010ELR K1 PMEG6010ELR Product data sheet All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IF forward current Tsp = 165 °C; δ = 1 - 1.41 A IF(AV) average forward current δ = 0.5; f = 20 kHz; Tsp ≤ 170 °C; - 1 A - 1 A - 50 A [2] - 680 mW [3] - 1150 mW [1] - 2140 mW square wave δ = 0.5; f = 20 kHz; Tamb ≤ 140 °C; [1] square wave IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] [3] [4] [5] PMEG6010ELR Product data sheet Min Typ Max Unit [1][2] - - 220 K/W [1][3] - - 130 K/W [1][4] - - 70 K/W [5] - - 18 K/W For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier 006aab362 103 duty cycle = Zth(j-a) (K/W) 1 102 0.5 0.25 0.1 10 0.02 1 0.75 0.33 0.2 0.05 0.01 0 10- 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab363 103 Zth(j-a) (K/W) duty cycle = 102 1 0.5 0.25 10 0.1 0.02 1 0.75 0.33 0.2 0.05 0.01 0 10- 1 10- 3 10- 2 10- 1 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG6010ELR Product data sheet All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier 006aab364 103 Zth(j-a) (K/W) duty cycle = 102 10 1 0.5 0.25 0.1 0.02 1 0.75 0.33 0.2 0.05 0.01 0 10- 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG6010ELR Product data sheet All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 0.1 A; Tj = 25 °C - 475 540 mV IF = 0.5 A; Tj = 25 °C - 550 605 mV IF = 0.7 A; Tj = 25 °C - 575 625 mV IF = 1 A; Tj = 25 °C - 605 660 mV VR = 5 V; tp ≤ 300 µs; δ ≤ 0.02; - 5 - nA - 6 - nA - 25 50 nA - 90 300 nA - 25 - µA - 120 - µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 110 - pF VR = 4 V; f = 1 MHz; Tj = 25 °C - 65 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 45 - pF IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 4.5 - ns IR reverse current Tj = 25 °C; pulsed VR = 10 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed VR = 40 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed VR = 10 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 125 °C; pulsed VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 125 °C; pulsed Cd trr diode capacitance reverse recovery time Tj = 25 °C V(BR)R reverse breakdown voltage IR = 1 mA; Tj = 25 °C 60 - - V VFRM peak forward recovery voltage IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 580 - mV PMEG6010ELR Product data sheet All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier aaa-009639 10 IF (A) IR (A) (1) 1 (2) aaa-009640 10-2 10-3 (1) (2) 10-4 (3) (3) 10-5 10-1 (4) 10-6 10-2 10-7 (4) (5) (6) (5) 10-8 10-3 10-9 10-4 Fig. 4. 0 0.2 0.4 0.6 0.8 VF (V) 10-10 1.0 (6) 0 20 (1) Tj = 175 °C (1) Tj = 175 °C (2) Tj = 150 °C (2) Tj = 150 °C (3) Tj = 125 °C (3) Tj = 125 °C (4) Tj = 85 °C (4) Tj = 85 °C (5) Tj = 25 °C (5) Tj = 25 °C (6) Tj = −40 °C (6) Tj = −40 °C Forward current as a function of forward voltage; typical values Fig. 5. aaa-009641 175 Cd (pF) 150 40 60 VR (V) Reverse current as a function of reverse voltage; typical values aaa-009642 0.8 PF(AV) (W) (4) 0.6 125 (3) 100 0.4 (2) 75 (1) 50 0.2 25 0 Fig. 6. 0 20 40 VR (V) 0 60 0 f = 1 MHz; Tamb = 25 °C Tj = 175 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. PMEG6010ELR Product data sheet 1.0 IF(AV) (A) 1.5 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 3 June 2014 0.5 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier aaa-009643 100 PR(AV) (mW) aaa-009644 1.5 (1) (1) IF(AV) (A) 75 1.0 50 (2) (2) (3) 0.5 25 0 (4) (3) (4) 0 20 40 VR (V) 0 60 Tj = 150 °C Average reverse power dissipation as a function of reverse voltage; typical values Fig. 9. aaa-009646 (1) IF(AV) (A) 1.0 (2) (3) 0.5 (2) (3) 0.5 (4) (4) 0 0 50 100 0 150 200 Tamb (°C) FR4 PCB, mounting pad for cathode 1 cm Tj = 175 °C Fig. 10. Average forward current as a function of ambient temperature; typical values Product data sheet 0 50 100 150 200 Tamb (°C) Ceramic PCB, Al2O3, standard footprint 2 Tj = 175 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz PMEG6010ELR 150 200 Tamb (°C) Average forward current as a function of ambient temperature; typical values 1.5 (1) 1.0 100 (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz aaa-009645 1.5 IF(AV) (A) 50 FR4 PCB, standard footprint Tj = 175 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 8. 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier aaa-009647 1.5 (1) IF(AV) (A) 1.0 (2) (3) 0.5 (4) 0 0 50 100 150 200 Tamb (°C) Tj = 175 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of solder point temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition PMEG6010ELR Product data sheet All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier IF time VF VFRM VF time 001aab912 Fig. 14. Forward recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 15. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG6010ELR Product data sheet All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier 12. Package outline Plastic surface-mounted package; 2 leads SOD123W D A E A c Lp Lp HE 0 (1) 1 2 mm DIMENSIONS (mm are the original dimensions) 2 bp w OUTLINE VERSION 1 scale A UNIT A bp c D E HE Lp w mm 1.1 0.9 1.05 0.75 0.22 0.10 2.8 2.4 1.9 1.5 3.7 3.3 0.6 0.3 0.13 Note 1. The marking bar indicates the cathode. REFERENCES IEC JEDEC EUROPEAN PROJECTION JEITA ISSUE DATE 07-06-28 08-11-06 SOD123W Fig. 16. Package outline SOD123W 13. Soldering 4.4 2.9 2.8 solder lands 1.1 1.2 (2×) (2×) 2.1 1.6 solder resist solder paste occupied area 1.1 (2×) 1.2 (2×) Dimensions in mm sod123w_fr Fig. 17. Reflow soldering footprint for SOD123W PMEG6010ELR Product data sheet All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG6010ELR v.2 20140603 Product data sheet - PMEG6010ELR v.1 Modifications: • PMEG6010ELR v.1 20131108 - - PMEG6010ELR Product data sheet Product specification updated Preliminary data sheet All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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PMEG6010ELR Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 15 PMEG6010ELR NXP Semiconductors 60 V, 1 A low leakage current Schottky barrier rectifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 June 2014 PMEG6010ELR Product data sheet All information provided in this document is subject to legal disclaimers. 3 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 15 / 15