350-KDI

A3RS91.1
High Power Chip Termination
100 Watts
When properly mounted on an appropriate heat sink, this chip
device provides high power dissipation capabilities. Ideal
for ferrite isolator applications, the improved thin film design
technology and laser trimming provide proven RF power
capabilities to meet the demands of today's CDMA and
WCDMA system requirements. Aluminum Nitride is featured
for those applications where the use and disposal of Beryllium
oxide is a concern.
• Environmentally friendly AlN substrate
• High performance, thin film element
• Power 100 Watts
• New adhesion process results in improved
terminal strength
• On-chip matching network improves frequency
performance over the DC-3 GHz frequency range
PHYSICAL DIMENSIONS
SPECIFICATIONS
Parameters
Specifications
Frequency Range
DC to 3 GHz
Power
100 Watts*
VSWR
1.10:1 max
Resistance
50 Ohms +/- 5%
Operating Temperature
-55 °C to 150 °C
Substrate
Aluminum Nitride
.225 REF
[5,72] REF
.045
[1,14]
.350REF
[8,89]REF
* Refer to average power derating curve chart.
TYPICAL PERFORMANCE
.050
[1,27]
.040 REF
[1,02]
A3RS91.1
WRAP AROUND
AVERAGE POWER DERATING CURVE
% OF RATED POWER
100
75
50
25
0
25
50
75
100
125
150
CHIP BASE TEMP ºC
KEY: Inches [Millimeters] .XX ±.03 .XXX ±.010 [.X ±0.8 .XX ±0.25]
300 Dino Drive, Ann Arbor, MI 48103
Tel: 888-244-6638 or 734-426-5553 • Fax: 734-426-5557
www.aeroflex.com/inmet • [email protected]
REV 04/11
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