Infrared Light Emitting Diodes LNA2W01L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Type number : Cathode mark (Red) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 0.5±0.1 Features High-power output, high-efficiency : PO = 4.5 mW (typ.) ø1.8 (0.7) Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit PD 75 mW Forward current (DC) IF 50 mA Pulse forward current IFP* 1 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C R0.9 0.85 ± 0.15 Ultra-miniature double ended package 1.8 0.15 1.05±0.1 Narrow directivity : θ = 18 deg. (typ.) 1.8 2.8±0.2 2.8±0.2 Infrared light emission close to monochromatic light : λP = 950 nm (typ.) 0.4±0.1 2 45 ˚ Emitted light spectrum suited for silicon photodetectors 2.2±0.15 (0.7) 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min 3 typ max Unit Radiant power PO IF = 50mA Peak emission wavelength λP IF = 50mA 4.5 mW 950 nm Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 50mA 1.25 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 35 pF Half-power angle θ The angle in which radiant intencity is 50% 18 deg. nm 1.5 V 10 µA 1 LNA2W01L Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle IF — VF 60 80 Ta = 25˚C 30 20 10 10 IF (mA) 40 1 Forward current IFP (A) 50 10 –1 50 40 30 20 10 –2 0 20 40 60 80 10 –3 10 –2 100 10 –1 Ambient temperature Ta (˚C ) 0 10 2 10 0 0.4 ∆PO — IF tw = 10µs Duty Cycle = 0.1% Ta = 25˚C 0.8 tw = 10µs (1) f = 100Hz (2) f = 21kHz (3) f = 42kHz (4) f = 60kHz Ta = 25˚C Relative radiant power ∆PO 1 Relative radiant power ∆PO 100 10 80 60 40 10 2 (1) 10 (2) (4) (3) 1 20 0 1 2 3 4 0 5 0 Forward voltage VF (V) 10 20 30 40 50 10 –1 10 60 Forward current IF (mA) 10 2 10 3 λP — Ta 10 3 1000 10mA 1mA 0.8 0.4 0 – 40 0 40 80 Ambient temperature Ta (˚C ) 120 IF = 50mA Peak emission wavelength λP (nm) IF = 50mA Relative radiant power ∆PO Forward voltage VF (V) IF = 50mA 1.2 10 2 10 1 – 40 10 4 Pulse forward current IFP (mA) ∆PO — Ta VF — Ta 1.6 2 1.6 ∆PO — IFP 10 3 Ta = 25˚C 10 2 1.2 Forward voltage VF (V) 120 10 3 10 –1 1 Duty cycle (%) IFP — VF 10 4 IFP (mA) 60 10 0 – 25 Pulse forward current Ta = 25˚C 70 Pulse forward current Allowable forward current IF (mA) 10 2 0 40 80 Ambient temperature Ta (˚C ) 120 980 960 940 920 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 120 Infrared Light Emitting Diodes Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant intensity (%) 90 80 80 70 60 60 50 40 40 30 20 20 10˚ Frequency characteristics 20˚ 10 2 100 Ta = 25˚C Relative radiant intensity(%) 100 30˚ 40˚ 50˚ 60˚ 70˚ 10 Modulation output Spectral characteristics LNA2W01L 1 10 –1 80˚ 90˚ 0 860 900 940 980 Wavelength 1020 1060 1100 λ (nm) 10 –2 1 10 Frequency 10 2 10 3 f (kHz) 3