Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm ■ Features ● ● ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SC4960 base voltage 2SC4960A Collector to emitter voltage Collector to (TC=25˚C) 2SC4960 emitter voltage 2SC4960A Ratings Unit 900 VCBO 7 V Peak collector current ICP 2 A Collector current IC 1 A Base current IB 0.3 A Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg Parameter Emitter cutoff current IEBO voltage 2SC4960A Forward current transfer ratio 150 ˚C –55 to +150 ˚C Symbol ICBO 2SC4960 0.6±0.2 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) (TC=25˚C) Collector cutoff current Collector to emitter 1.1±0.1 W 3 ■ Electrical Characteristics 2.0±0.1 V 900 VEBO dissipation 0.7 V 800 Emitter to base voltage Collector power TC=25°C 2.0±0.2 5.45±0.3 900 VCEO 5.0±0.2 3.2 φ3.2±0.1 V 900 VCES 15.0±0.3 11.0±0.2 21.0±0.5 15.0±0.2 ● High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 16.2±0.5 12.5 3.5 Solder Dip ● VCEO Conditions min typ VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 800 IC = 1mA, IB = 0 900 hFE1 VCE = 5V, IC = 0.05A 6 3 hFE2 VCE = 5V, IC = 0.5A Collector to emitter saturation voltage VCE(sat) IC = 0.2A, IB = 0.04A Base to emitter saturation voltage VBE(sat) IC = 0.2A, IB = 0.04A Transition frequency fT VCE = 10V, IC = 0.05A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A, VCC = 250V max Unit 50 µA 50 µA V 1.5 1 4 V V MHz 1 µs 3 µs 1 µs 1 Power Transistors 2SC4960, 2SC4960A PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.0W) (1) 40 30 20 (2) Collector to emitter saturation voltage VCE(sat) (V) 1.2 TC=25˚C IB=200mA 1.0 Collector current IC (A) Collector power dissipation PC (W) 50 10 0.8 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 0.6 0.4 20mA 0.2 10mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 3 25˚C 1 0.3 –25˚C 0.1 0.03 0.01 0.01 Collector to emitter voltage VCE (V) VBE(sat) — IC TC=100˚C IC/IB=5 0.03 0.1 0.3 1 Collector current IC (A) hFE — IC fT — IC IC/IB=5 25˚C TC=–25˚C 1 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 25˚C 30 TC=100˚C 10 –25˚C 3 1 0.3 Collector current IC (A) ton, tstg, tf — IC 0.1 0.3 1 3 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=250V TC=25˚C Non repetitive pulse TC=25˚C 3 Collector current IC (A) 10 3 tstg 1 0.3 ton tf 0.1 ICP t=1ms IC 1 10ms 0.3 DC 0.1 2SC4960 2SC4960A 0.03 0.03 0.01 0.01 0 0.2 0.4 0.6 0.8 Collector current IC (A) 2 1.0 100 30 10 3 1 1 3 10 30 100 300 0.1 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 10 30 Switching time ton,tstg,tf (µs) 0.03 Collector current IC (A) 100 300 0.3 0.1 0.01 1 VCE=10V f=1MHz TC=25˚C VCE=5V 100 Transition frequency fT (MHz) 3 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1000 1000 Collector to emitter voltage VCE (V) 1 Power Transistors 2SC4960, 2SC4960A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 4.0 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C Collector current IC (A) 3.5 L coil 3.0 IB1 2.5 –IB2 Vin ICP 2.0 T.U.T IC VCC 1.5 1.0 Vclamp tW 0.5 0 0 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3