Data Sheet

PMEG6020ETR
High-temperature 60 V, 2 A Schottky barrier rectifier
11 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
• Average forward current: IF(AV) ≤ 2 A
• Reverse voltage: VR ≤ 60 V
• Low forward voltage
• High power capability due to clip-bonding technology
• Small and flat lead SMD plastic package
• AEC-Q101 qualified
• High temperature Tj ≤ 175 °C
1.3 Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
Tsp = 160 °C
-
-
2.8
A
IF(AV)
average forward
current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 100 °C;
-
-
2
A
-
-
2
A
[1]
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 165 °C;
square wave
VR
reverse voltage
Tj = 25 °C
-
-
60
V
VF
forward voltage
IF = 2 A; Tj = 25 °C
-
460
530
mV
IR
reverse current
Tj = 25 °C; VR = 60 V; tp ≤ 300 µs;
-
60
150
µA
δ ≤ 0.02 ; pulsed
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
trr
reverse recovery time
IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A;
-
8.5
-
ns
Tj = 25 °C
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
[1]
Simplified outline
1
Graphic symbol
1
2
2
sym001
SOD123W
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
PMEG6020ETR
Name
Description
Version
SOD123W
plastic surface mounted package; 2 leads
SOD123W
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG6020ETR
EL
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
60
V
IF
forward current
Tsp = 160 °C
-
2.8
A
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 100 °C;
-
2
A
-
2
A
-
50
A
[1]
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 165 °C;
square wave
IFSM
non-repetitive peak forward
current
PMEG6020ETR
Product data sheet
tp = 8 ms; Tj(init) = 25 °C; square wave
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
Symbol
Parameter
Conditions
Ptot
total power dissipation
Tamb ≤ 25 °C
Min
Max
Unit
[2]
-
680
mW
[3]
-
1150
mW
[1]
-
2140
mW
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
Min
Typ
Max
Unit
[1][2]
-
-
220
K/W
[1][3]
-
-
130
K/W
[1][4]
-
-
70
K/W
[5]
-
-
18
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of cathode tab.
006aab649
103
duty cycle =
Zth(j-a)
(K/W)
1
102
0.5
0.25
0.1
10
0.02
1
0.75
0.33
0.2
0.05
0.01
0
10- 1
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6020ETR
Product data sheet
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
006aab650
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
1
0.01
0
10- 1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
1
102
10
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
006aab651
duty cycle =
1
Zth(j-a)
(K/W)
0.75
0.5
0.33
0.25
0.2
10
0.1
0.05
0.02
0.01
1
0
10- 1
10- 3
10- 2
10- 1
1
102
10
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 0.1 A; Tj = 25 °C
-
300
340
mV
IF = 0.5 A; Tj = 25 °C
-
360
420
mV
IF = 1 A; Tj = 25 °C
-
400
460
mV
IF = 1.5 A; Tj = 25 °C
-
430
500
mV
IF = 2 A; Tj = 25 °C
-
460
530
mV
IF = 2 A; Tj = -40 °C
-
510
590
mV
PMEG6020ETR
Product data sheet
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
Symbol
Parameter
IR
reverse current
Conditions
Min
Typ
Max
Unit
IF = 2 A; Tj = 125 °C
-
410
480
mV
IF = 2 A; Tj = 150 °C
-
390
460
mV
IF = 2 A; Tj = 175 °C
-
375
450
mV
VR = 5 V; Tj = 25 °C; tp ≤ 300 µs;
-
2.5
-
µA
-
3.5
-
µA
-
60
150
µA
-
0.9
15
µA
-
27
100
mA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
240
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
80
-
pF
IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
-
8.5
-
ns
-
455
-
mV
δ ≤ 0.02 ; pulsed
VR = 10 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 60 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 60 V; Tj = -40 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 60 V; Tj = 125 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
Cd
diode capacitance
trr
reverse recovery time
Tj = 25 °C
VFRM
peak forward recovery
voltage
IF = 1 A; dIF/dt = 40 A/µs; Tj = 25 °C
006aad125
10
IF
(A)
IR
(A)
(1)
(2)
1
(1)
(2)
10-2
(3)
10-3
(3)
(4)
10-1
006aad126
10-1
(5)
(4)
10-4
(6)
10-5
(5)
10-6
10-2
10-7
10-8
10-3
(6)
10-9
10-4
Fig. 4.
0
0.3
0.6
VF (V)
0.9
10-10
0
20
(1) Tj = 175 °C
(1) Tj = 175 °C
(2) Tj = 150 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(5) Tj = 25 °C
(6) Tj = −40 °C
(6) Tj = −40 °C
Forward current as a function of forward
voltage; typical values
PMEG6020ETR
Product data sheet
Fig. 5.
VR (V)
60
Reverse current as a function of reverse
voltage; typical values
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
006aab865
500
006aad127
1.2
(4)
Cd
(pF)
(3)
PF(AV)
(W)
400
0.8
(2)
300
(1)
200
0.4
100
0
Fig. 6.
0
20
40
VR (V)
0
60
0
f = 1 MHz; Tamb = 25 °C
Tj = 175 °C
Diode capacitance as a function of reverse
voltage; typical values
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7.
006aad128
2.5
2
IF(AV) (A)
3
Average forward power dissipation as a
function of average forward current; typical
values
006aad153
2.0
PR(AV)
(W)
2.0
1
PR(AV)
(W)
(1)
1.5
(2)
(3)
1.5
(1)
1.0
1.0
(2)
0.5
(4)
0.5
(3)
(4)
0
Fig. 8.
0
20
40
VR (V)
0
60
0
Tj = 150 °C
Tj = 125 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Average reverse power dissipation as a
function of reverse voltage; typical values
PMEG6020ETR
Product data sheet
Fig. 9.
40
VR (V)
60
Average reverse power dissipation as a
function of reverse voltage; typical values
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
006aad154
200
006aad129
3
PR(AV)
(mW)
IF(AV)
(A)
150
(1)
2
(2)
100
(1)
(2)
(3)
1
(4)
50
(3)
(4)
0
0
20
40
VR (V)
0
60
Tj = 85 °C
Fig. 10. Average reverse power dissipation as a
function of reverse voltage; typical values
006aad131
(1)
IF(AV)
(A)
2
(2)
(3)
(2)
(3)
1
(4)
0
0
(4)
50
100
0
150
200
Tamb (°C)
FR4 PCB, mounting pad for cathode 1 cm
Tj = 175 °C
Fig. 12. Average forward current as a function of
ambient temperature; typical values
Product data sheet
0
50
100
150
200
Tamb (°C)
Ceramic PCB, Al2O3, standard footprint
2
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
PMEG6020ETR
150
200
Tamb (°C)
Fig. 11. Average forward current as a function of
ambient temperature; typical values
3
(1)
1
100
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
006aad130
3
2
50
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
IF(AV)
(A)
0
Fig. 13. Average forward current as a function of
ambient temperature; typical values
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
006aad132
3
(1)
IF(AV)
(A)
2
(2)
(3)
1
(4)
0
0
50
100
150
200
Tamb (°C)
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 14. Average forward current as a function of solder point temperature; typical values
8. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 15. Reverse recovery definition
PMEG6020ETR
Product data sheet
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
IF
time
VF
VFRM
VF
time
001aab912
Fig. 16. Forward recovery definition
P
tcy
duty cycle δ =
tp
tcy
tp
t
006aac658
Fig. 17. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMEG6020ETR
Product data sheet
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High-temperature 60 V, 2 A Schottky barrier rectifier
9. Package outline
1.9
1.5
1.1
0.9
1
0.6
0.3
3.7
3.3
2.8
2.4
2
1.05
0.75
0.22
0.10
Dimensions in mm
08-11-06
Fig. 18. Package outline SOD123W
10. Soldering
4.4
2.9
2.8
solder lands
1.1 1.2
(2×) (2×)
2.1 1.6
solder resist
solder paste
occupied area
1.1
(2×)
1.2
(2×)
Dimensions in mm
sod123w_fr
Fig. 19. Reflow soldering footprint for SOD123W
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG6020ETR v.1
20121011
Product data sheet
-
-
PMEG6020ETR
Product data sheet
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
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representations or warranties as to the accuracy or completeness of
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
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customer have explicitly agreed otherwise in writing. In no event however,
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMEG6020ETR
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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and the products or of the application or use by customer’s third party
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMEG6020ETR
Product data sheet
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PMEG6020ETR
NXP Semiconductors
High-temperature 60 V, 2 A Schottky barrier rectifier
13. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................2
6
Thermal characteristics .........................................3
7
Characteristics ....................................................... 4
8
8.1
Test information ..................................................... 8
Quality information .........................................
9
Package outline ................................................... 10
10
Soldering .............................................................. 10
11
Revision history ................................................... 10
12
12.1
12.2
12.3
12.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 October 2012
PMEG6020ETR
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 October 2012
© NXP B.V. 2012. All rights reserved
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