Data Sheet

PMEG6030ETP
High-temperature 60 V, 3 A Schottky barrier rectifier
15 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
• Average forward current: IF(AV) ≤ 3 A
• Reverse voltage: VR ≤ 60 V
• Low forward voltage
• High power capability due to clip-bonding technology
• Small and flat lead SMD plastic package
• AEC-Q101 qualified
• High temperature Tj ≤ 175 °C
1.3 Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
Tsp = 160 °C
-
-
4.2
A
IF(AV)
average forward
current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C;
-
-
3
A
-
-
3
A
[1]
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 165 °C;
square wave
VR
reverse voltage
Tj = 25 °C
-
-
60
V
VF
forward voltage
IF = 3 A; Tj = 25 °C
-
460
530
mV
IR
reverse current
Tj = 25 °C; VR = 60 V; tp ≤ 300 µs;
-
80
200
µA
δ ≤ 0.02 ; pulsed
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PMEG6030ETP
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
trr
reverse recovery time
IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A;
-
12
-
ns
Tj = 25 °C
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
Simplified outline
1
Graphic symbol
1
2
sym001
SOD128
[1]
2
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
PMEG6030ETP
Name
Description
Version
SOD128
plastic surface-mounted package; 2 leads
SOD128
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG6030ETP
DA
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
60
V
IF
forward current
Tsp = 160 °C
-
4.2
A
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C;
-
3
A
-
3
A
-
50
A
[1]
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 165 °C;
square wave
IFSM
non-repetitive peak forward
current
PMEG6030ETP
Product data sheet
tp = 8 ms; Tj(init) = 25 °C; square wave
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PMEG6030ETP
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
Symbol
Parameter
Conditions
Ptot
total power dissipation
Tamb ≤ 25 °C
Min
Max
Unit
[2]
-
750
mW
[3]
-
1250
mW
[1]
-
2500
mW
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
Min
Typ
Max
Unit
[1][2]
-
-
200
K/W
[1][3]
-
-
120
K/W
[1][4]
-
-
60
K/W
[5]
-
-
12
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of cathode tab.
006aab666
103
Zth(j-a)
(K/W)
duty cycle =
102
1
0.5
0.25
10
0.75
0.33
0.2
0.1
0.05
0.02
0.01
1
0
10- 1
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6030ETP
Product data sheet
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PMEG6030ETP
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
006aab667
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.75
0.5
0.33
0.2
0.25
0.1
10
0.05
0.02
0.01
1
0
10- 1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
1
102
10
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
006aab668
duty cycle =
1
Zth(j-a)
(K/W)
0.75
0.5
0.33
0.25
10
0.2
0.1
0.05
0.02
0.01
1
0
10- 1
10- 3
10- 2
10- 1
1
102
10
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 0.1 A; Tj = 25 °C
-
290
330
mV
IF = 0.5 A; Tj = 25 °C
-
340
400
mV
IF = 1 A; Tj = 25 °C
-
380
440
mV
IF = 1.5 A; Tj = 25 °C
-
400
470
mV
IF = 2 A; Tj = 25 °C
-
430
500
mV
IF = 3 A; Tj = 25 °C
-
460
530
mV
PMEG6030ETP
Product data sheet
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PMEG6030ETP
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
Symbol
IR
Parameter
reverse current
Conditions
Min
Typ
Max
Unit
IF = 3 A; Tj = -40 °C
-
510
590
mV
IF = 3 A; Tj = 125 °C
-
405
480
mV
IF = 3 A; Tj = 150 °C
-
390
460
mV
IF = 3 A; Tj = 175 °C
-
370
450
mV
VR = 5 V; Tj = 25 °C; tp ≤ 300 µs;
-
4
-
µA
-
5
-
µA
-
80
200
µA
-
0.5
10
µA
-
45
150
mA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
360
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
120
-
pF
IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
-
12
-
ns
-
425
-
mV
δ ≤ 0.02 ; pulsed
VR = 10 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 60 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 60 V; Tj = -40 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 60 V; Tj = 125 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
Cd
trr
diode capacitance
reverse recovery time
Tj = 25 °C
VFRM
peak forward recovery
voltage
PMEG6030ETP
Product data sheet
IF = 1 A; dIF/dt = 40 A/µs; Tj = 25 °C
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PMEG6030ETP
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
0006aad141
10
IF
(A)
IR
(A)
(1)
(2)
1
(3)
(4)
(5)
006aad142
10-1
(1)
(2)
10-2
(3)
10-3
(6)
(4)
10-4
10-1
10-5
(5)
10-6
10-2
10-7
10-8
10-3
(6)
10-9
10-4
Fig. 4.
0
0.1
0.2
0.3
0.4
0.5
10-10
0.6
0.7
VF (V)
0
20
(1) Tj = 175 °C
(1) Tj = 175 °C
(2) Tj = 150 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(5) Tj = 25 °C
(6) Tj = −40 °C
(6) Tj = −40 °C
Forward current as a function of forward
voltage; typical values
Fig. 5.
006aab883
700
Cd
(pF)
600
40
VR (V)
60
Reverse current as a function of reverse
voltage; typical values
006aad143
2.0
PF(AV)
(W)
(4)
1.8
(3)
500
(2)
1.2
400
300
0.8
(1)
200
0.4
100
0
Fig. 6.
0
20
40
VR (V)
0
60
0
f = 1 MHz; Tamb = 25 °C
Tj = 175 °C
Diode capacitance as a function of reverse
voltage; typical values
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7.
PMEG6030ETP
Product data sheet
3.0
IF(AV) (A)
4.5
Average forward power dissipation as a
function of average forward current; typical
values
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PMEG6030ETP
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
006aad144
2.5
(1)
PR(AV)
(W)
(2)
006aad157
2.5
PR(AV)
(W)
(3)
2.0
(1)
2.0
(4)
1.5
1.5
(2)
1.0
1.0
0.5
0.5
(3)
(4)
0
Fig. 8.
0
20
40
VR (V)
0
60
0
20
Tj = 150 °C
Tj = 125 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Average reverse power dissipation as a
function of reverse voltage; typical values
006aad158
0.25
Fig. 9.
40
60
Average reverse power dissipation as a
function of reverse voltage; typical values
006aad145
4.5
PR(AV)
(W)
VR (V)
IF(AV)
(A)
0.20
3.0
(1)
0.15
(1)
(2)
(2)
0.10
(3)
1.5
(4)
(3)
0.05
(4)
0
0
20
40
VR (V)
0
60
Tj = 85 °C
Fig. 10. Average reverse power dissipation as a
function of reverse voltage; typical values
Product data sheet
50
100
150
200
Tamb (°C)
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
PMEG6030ETP
0
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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PMEG6030ETP
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
006aad146
4.5
IF(AV)
(A)
3.0
(2)
(3)
1.5
(1)
IF(AV)
(A)
(1)
3.0
006aad147
4.5
(2)
(3)
1.5
(4)
0
0
(4)
50
100
0
150
200
Tamb (°C)
FR4 PCB, mounting pad for cathode 1 cm
Tj = 175 °C
50
100
150
200
Tamb (°C)
Ceramic PCB, Al2O3, standard footprint
2
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of
ambient temperature; typical values
0
Fig. 13. Average forward current as a function of
ambient temperature; typical values
006aad148
4.5
(1)
IF(AV)
(A)
3.0
(2)
(3)
1.5
(4)
0
0
50
100
150
200
Tamb (°C)
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 14. Average forward current as a function of solder point temperature; typical values
PMEG6030ETP
Product data sheet
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High-temperature 60 V, 3 A Schottky barrier rectifier
8. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 15. Reverse recovery definition
IF
time
VF
VFRM
VF
time
001aab912
Fig. 16. Forward recovery definition
P
tcy
duty cycle δ =
tp
tcy
tp
t
006aac658
Fig. 17. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
PMEG6030ETP
Product data sheet
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PMEG6030ETP
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High-temperature 60 V, 3 A Schottky barrier rectifier
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
2.7
2.3
1.1
0.9
0.6
0.3
1
5.0
4.4
4.0
3.6
2
1.9
1.6
0.22
0.10
Dimensions in mm
07-09-12
Fig. 18. Package outline SOD128
10. Soldering
6.2
4.4
4.2
solder lands
1.9 2.1
(2×) (2×)
3.4 2.5
solder resist
solder paste
occupied area
Dimensions in mm
1.2
(2×)
1.4
(2×)
sod128_fr
Fig. 19. Reflow soldering footprint for SOD128
PMEG6030ETP
Product data sheet
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High-temperature 60 V, 3 A Schottky barrier rectifier
11. PMEG6030ETP
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG6030ETP v.1
20121015
Product data sheet
-
-
PMEG6030ETP
Product data sheet
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PMEG6030ETP
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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PMEG6030ETP
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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PMEG6030ETP
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High-temperature 60 V, 3 A Schottky barrier rectifier
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
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Corporation.
PMEG6030ETP
Product data sheet
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15 October 2012
© NXP B.V. 2012. All rights reserved
13 / 14
PMEG6030ETP
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
13. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................2
6
Thermal characteristics .........................................3
7
Characteristics ....................................................... 4
8
8.1
Test information ..................................................... 9
Quality information .........................................
9
Package outline ................................................... 10
10
Soldering .............................................................. 10
11
PMEG6030ETP ..................................................... 11
12
12.1
12.2
12.3
12.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 15 October 2012
PMEG6030ETP
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 October 2012
© NXP B.V. 2012. All rights reserved
14 / 14
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