Chinese (simplified)/English

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
J
VCES = 1200V
IC nom = 40A / ICRM = 80A
典型应用
• 太阳能应用
TypicalApplications
• Solarapplications
电气特性
• 高速IGBTH3
• 低开关损耗
ElectricalFeatures
• HighspeedIGBTH3
• Lowswitchinglosses
机械特性
• 3kV交流1分钟绝缘
• 低热阻的三氧化二铝(Al2O3衬底
• 集成NTC温度传感器
• 紧凑型设计
• PressFIT压接技术
MechanicalFeatures
• 3kVAC1mininsulation
• Al2O3substratewithlowthermalresistance
• IntegratedNTCtemperaturesensor
• Compactdesign
• PressFITcontacttechnology
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
反极性保护二极管A/Inverse-polarityprotectiondiodeA
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 1200
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM 50
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM 60
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
360
290
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
650
420
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
正向电压
Forwardvoltage
Tvj = 150°C, IF = 30 A
VF
0,95
V
反向电流
Reversecurrent
Tvj = 150°C, VR = 1200 V
IR
0,10
mA
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,800 0,900 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,800
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
K/W
150
°C
反极性保护二极管B/Inverse-polarityprotectiondiodeB
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 1200
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM 30
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM 60
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
290
245
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
420
300
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
正向电压
Forwardvoltage
Tvj = 150°C, IF = 20 A
VF
1,00
V
反向电流
Reversecurrent
Tvj = 150°C, VR = 1200 V
IR
0,10
mA
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,20
1,35 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,15
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
2
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
IGBT,斩波器/IGBT-Chopper
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 75°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
40
50
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
80
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Ptot
180
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
V
1200
VCE sat
A
A
typ.
max.
2,05
2,50
2,60
2,40
V
V
V
5,80
6,50
V
栅极阈值电压
Gatethresholdvoltage
IC = 1,00 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,32
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
2,35
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,13
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 40 A, VCE = 600 V
VGE = ±15 V
RGon = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 40 A, VCE = 600 V
VGE = ±15 V
RGon = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 40 A, VCE = 600 V
VGE = ±15 V
RGoff = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 40 A, VCE = 600 V
VGE = ±15 V
RGoff = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 40 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 1800 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 12 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,00
0,035
0,035
0,035
µs
µs
µs
0,02
0,025
0,025
µs
µs
µs
0,23
0,29
0,31
µs
µs
µs
0,02
0,04
0,05
µs
µs
µs
Eon
2,00
3,10
3,50
mJ
mJ
mJ
IC = 40 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4300 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 12 Ω
Tvj = 150°C
Eoff
1,50
2,40
2,70
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
130
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,550 0,700 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,550
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 10 µs, Tvj = 125°C
td on
tr
td off
tf
Tvj op
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
3
-40
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
Diode-斩波器/Diode-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
VRRM Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
1200
V
IF
25
A
IFRM
30
A
I²t
310
A²s
特征值/CharacteristicValues
min.
typ.
max.
2,55
VF
2,00
1,70
1,65
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
30,0
45,0
50,0
A
A
A
IF = 25 A, - diF/dt = 1600 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
1,50
3,50
4,00
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 25 A, - diF/dt = 1600 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,70
1,75
2,15
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,700 0,750 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,700
正向电压
Forwardvoltage
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 25 A, - diF/dt = 1600 A/µs (Tvj=150°C)
VR = 600 V
恢复电荷
Recoveredcharge
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
V
V
V
K/W
150
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TNTC = 25°C
R100偏差
DeviationofR100
TNTC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TNTC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
4
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
10,0
5,0
mm
> 200
相对电痕指数
Comperativetrackingindex
VISOL CTI
min.
杂散电感,模块
Strayinductancemodule
LsCE
储存温度
Storagetemperature
Tstg
-40
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
40
重量
Weight
G
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
5
kV
3,0
typ.
max.
25
36
nH
125
°C
80
N
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
正向偏压特性反极性保护二极管A(典型)
forwardcharacteristicofInverse-polarityprotectiondiodeA
(typical)
IF=f(VF)
正向偏压特性反极性保护二极管B(典型)
forwardcharacteristicofInverse-polarityprotectiondiodeB
(typical)
IF=f(VF)
60
40
Tvj = 25°C
Tvj = 150°C
Tvj = 25°C
Tvj = 150°C
35
50
30
40
IF [A]
IF [A]
25
30
20
15
20
10
10
5
0
0,0
0,2
0,4
0,6
0,8
VF [V]
1,0
1,2
0
1,4
输出特性IGBT,斩波器(典型)
outputcharacteristicIGBT-Chopper(typical)
IC=f(VCE)
VGE=15V
0,4
0,6
0,8
VF [V]
1,0
1,2
1,4
80
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
70
60
60
50
50
40
40
30
30
20
20
10
10
0,0
0,5
1,0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
70
IC [A]
IC [A]
0,2
输出特性IGBT,斩波器(典型)
outputcharacteristicIGBT-Chopper(typical)
IC=f(VCE)
Tvj=150°C
80
0
0,0
1,5
2,0
2,5
VCE [V]
3,0
3,5
0
4,0
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
6
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
传输特性IGBT,斩波器(典型)
transfercharacteristicIGBT-Chopper(typical)
IC=f(VGE)
VCE=20V
开关损耗IGBT,斩波器(典型)
switchinglossesIGBT-Chopper(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=12Ω,RGoff=12Ω,VCE=600V
80
8,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
7,0
60
6,0
50
5,0
E [mJ]
IC [A]
70
40
3,0
20
2,0
10
1,0
5
6
7
8
9
VGE [V]
10
11
0,0
12
开关损耗IGBT,斩波器(典型)
switchinglossesIGBT-Chopper(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=40A,VCE=600V
0
8
16
24
40 48
IC [V]
56
64
72
80
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
10,0
ZthJH : IGBT
1
ZthJH [K/W]
8,0
6,0
4,0
0,1
2,0
0,0
32
瞬态热阻抗IGBT,斩波器
transientthermalimpedanceIGBT-Chopper
ZthJH=f(t)
12,0
E [mJ]
4,0
30
0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
i:
1
2
3
4
ri[K/W]: 0,051 0,117 0,426 0,506
τi[s]:
0,0005 0,005 0,05 0,2
0
10
20
30
40
50 60
RG [Ω]
70
80
90
0,01
0,001
100
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
7
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
反偏安全工作区IGBT,斩波器(RBSOA)
reversebiassafeoperatingareaIGBT-Chopper(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=12Ω,Tvj=150°C
正向偏压特性Diode-斩波器(典型)
forwardcharacteristicofDiode-Chopper(typical)
IF=f(VF)
100
50
IC, Modul
IC, Chip
80
40
70
35
60
30
50
25
40
20
30
15
20
10
10
5
0
0
200
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
45
IF [A]
IC [A]
90
400
600
800
1000
1200
0
1400
0,0
0,5
1,0
t [s]
开关损耗Diode-斩波器(典型)
switchinglossesDiode-Chopper(typical)
Erec=f(IF)
RGon=12Ω,VCE=600V
2,5
3,0
80
100
120
3,00
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
2,50
2,50
2,00
2,00
E [mJ]
E [mJ]
2,0
开关损耗Diode-斩波器(典型)
switchinglossesDiode-Chopper(typical)
Erec=f(RG)
IF=25A,VCE=600V
3,00
1,50
1,50
1,00
1,00
0,50
0,50
0,00
1,5
VF [V]
0
5
10
15
20
25 30
IF [A]
35
40
45
0,00
50
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
8
0
20
40
60
RG [Ω]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
瞬态热阻抗Diode-斩波器
transientthermalimpedanceDiode-Chopper
ZthJH=f(t)
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
10
100000
ZthJH : Diode
Rtyp
R[Ω]
ZthJH [K/W]
10000
1
1000
i:
1
2
3
4
ri[K/W]: 0,097 0,219 0,576 0,508
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
100
10
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
9
0
20
40
60
80
100
TNTC [°C]
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
接线图/Circuitdiagram
J
封装尺寸/Packageoutlines
Infineon
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF120R12W2H3_B27
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
使用条件和条款
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提示或者任何特定数值及/或任何关于产品应用方面的信息均在此明确声明其不承担任何保证或者责任,包括但不限于其不侵犯任何
第三方知识产权的保证均在此排除。
此外,本文档所提供的任何信息均取决于客户履行本文档所载明的义务和客户遵守适用于客户产品以及与客户对于英飞凌产品的应用
所相关的任何法律要求、规范和标准。
本文档所含的数据仅供经过专业技术培训的人员使用。客户自身的技术部门有义务对于产品是否适宜于其预期的应用和针对该等应用
而言本文档中所提供的信息是否充分自行予以评估。
如需产品、技术、交付条款和条件以及价格等进一步信息,请向离您最近的英飞凌科技办公室接洽(www.infineon.com)。
警告事项
由于技术所需产品可能含有危险物质。如需了解该等物质的类型,请向离您最近的英飞凌科技办公室接洽。
除非由经英飞凌科技授权代表签署的书面文件中做出另行明确批准的情况外,英飞凌科技的产品不应当被用于任何一项一旦产品失效
或者产品使用的后果可被合理地预料到可能导致人身伤害的任何应用领域。
Terms&Conditionsofusage
IMPORTANTNOTICE
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandany
applicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologies
incustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnical
departmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgivenin
thisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
Technologiesoffice(www.infineon.com).
WARNINGS
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactyour
nearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon
Technologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof
theusethereofcan
reasonablybeexpectedtoresultinpersonalinjury.
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.1
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