Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product data sheet
Supersedes data of 2001 Oct 10
2003 Mar 20
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
FEATURES
BAS29; BAS31; BAS35
PINNING
• Small plastic SMD package
DESCRIPTION
PIN
• Switching speed: max. 50 ns
BAS29
• General application
• Continuous reverse voltage: max. 90 V
• Repetitive peak reverse voltage: max. 110 V
• Repetitive peak forward current: max. 600 mA
BAS31
anode
BAS35
1
anode
cathode (k1)
2
not connected cathode
cathode (k2)
3
cathode
common
anode
common
connection
• Repetitive peak reverse current: max. 600 mA.
APPLICATIONS
handbook, halfpage
2
1
• General purpose switching in e.g. surface mounted
circuits.
2
1
3
DESCRIPTION
General purpose switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
3
a. Simplified outline.
2
n.c.
c. BAS31 diode.
1
2
1
MARKING
3
TYPE NUMBER
MARKING CODE(1)
BAS29
L20 or ∗A8
BAS31
L21 or ∗V1
BAS35
L22 or ∗V2
b. BAS29 diode.
d. BAS35 diode.
MAM233
Fig.1 Simplified outline (SOT23) and symbols.
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
2003 Mar 20
3
2
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
−
110
V
−
90
V
single diode loaded; see Fig.2;
note 1
−
250
mA
double diode loaded; see Fig.2;
note 1
−
150
mA
−
600
mA
t = 1 µs
−
10
A
t = 100 µs
−
4
A
t=1s
−
0.75
A
−
250
mW
−
600
mA
−
5
mJ
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
IRRM
repetitive peak reverse current
ERRM
repetitive peak reverse energy
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
3
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VF
IR
forward voltage
reverse current
see Fig.3
IF = 10 mA
−
750
mV
IF = 50 mA
−
840
mV
IF = 100 mA
−
900
mV
IF = 200 mA
−
1
V
IF = 400 mA
−
1.25
V
VR = 90 V
−
100
nA
VR = 90 V; Tj = 150 °C
see Fig.5
−
100
µA
V(BR)R
reverse avalanche breakdown
voltage
IR = 1 mA
120
170
V
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
35
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured
at IR = 3 mA; see Fig.7
−
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
4
VALUE
UNIT
360
K/W
500
K/W
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
GRAPHICAL DATA
MBG440
300
MBH280
600
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
400
(1)
100
(2)
(3)
200
(2)
0
0
0
100
Tamb (oC)
200
0
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBH327
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 20
5
104
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
MBH282
102
handbook, halfpage
MGD003
40
handbook, halfpage
IR
(µA)
Cd
(pF)
10
30
(1)
1
(2)
20
10−1
10
10−2
100
0
Tj (oC)
0
200
0
10
(1) VR = 90 V; maximum values.
(2) VR = 90 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
handbook, full pagewidth
tr
20
VR (V)
30
Diode capacitance as a function of reverse
voltage; typical values.
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2003 Mar 20
t rr
6
output signal
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Mar 20
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
7
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
2003 Mar 20
8
NXP Semiconductors
Customer notification
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Printed in The Netherlands
613514/05/pp9
Date of release: 2003 Mar 20
Document order number: 9397 750 10962
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