LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (0.56 Inch) LSD5D5/62-XX DATA SHEET DOC. NO : QW0905- LSD5D5/62-XX REV. : A DATE : 03 - Jun. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LSD5D5/62-XX Package Dimensions 12.5 (0.492") 8.0 (0.315") 17.5 (0.689") 14.2 (0.56") 15.1 (0.594") ψ1.6(0.063") LSD5D5/62-XX LIGITEK A F 4.5± 0.5 Ø 0.45 TYP E B C D 2.5*2 2.46 G DP 2.46 9.9MIN(0.34" PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LSD5D5/62-XX Internal Circuit Diagram LSD5D52-XX 3,8 A B 7 6 C D 4 2 E 1 F 9 G DP 10 5 LSD5D62-XX 3,8 A B 7 6 C D E F 4 1 9 10 2 G DP 5 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD5D5/62-XX Page 3/7 Electrical Connection PIN NO. LSD5D52-XX 1. Anode E 2. Anode D 3. Common Cathode 4. Anode C 5. Anode DP 6. Anode B 7. Anode A 8. Common Cathode 9. Anode F 10. Anode G PIN NO. LSD5D62-XX 1. Cathode E 2. Cathode D 3. Common Aonde 4. Cathode C 5. Cathode DP 6. Cathode B 7. Cathode A 8. Common Aonde 9. Cathode F 10. Cathode G LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LSD5D5/62-XX Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT G Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common λP cathode (nm) Material Emitted or anode CHIP PART NO Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LSD5D52-XX GaP LSD5D62-XX Electrical △λ 565 Green 30 1.7 2.1 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 4.0 6.1 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD5D5/62-XX Page 5/7 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LSD5D5/62-XX Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD5D5/62-XX Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11