Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm ■ Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. * Drain to Source voltage VDS Gate to Source voltage VGSO Drain current ID (1.0) (0.4) Unit 80 V 20 V ±0.5 A (0.85) 0.45±0.05 0.55±0.1 1 (2.5) Max drain current IDP ±1 A Allowable power dissipation PD * 1 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 4.1±0.2 2.0±0.2 2.4±0.2 1.0±0.1 Ratings 4.5±0.1 3.5±0.1 R 0.9 1.25±0.05 Symbol (1.0) (1.5) R 0.7 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter 2.5±0.1 6.9±0.1 (1.5) 2 3 1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Package (2.5) PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions min Drain to Source cut-off current IDSS VDS = 60V, VGS = 0 Gate to Source leakage current IGSS VGS = 20V, VDS = 0 Drain to Source breakdown voltage VDSS IDS = 100µA, VGS = 0 80 Gate threshold voltage Vth ID = 1mA, VDS = VGS 1.5 Drain to Source ON-resistance RDS(on)*1 ID = 0.5A, VGS = 10V Forward transfer admittance | Yfs | ID = 0.2A, VDS = 15V, f = 1kHz typ max Unit 10 µA 0.1 µA V 2 3.5 V 4 Ω 300 mS 45 pF 30 pF 8 pF Turn-on time ton *1, 2 15 ns Turn-off time toff*1, 2 20 ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss *1 *2 Pulse measurement t on, toff measurement circuit Vout Vin = 10V t = 1µS f = 1MHZ Vin 68Ω 50Ω VDD = 30V 10% Vin 10% 90% 90% V Vout out ton toff Note) The part number in the parenthesis shows conventional part number. 1 Silicon MOS FETs (Small Signal) 2SK0615 PD Ta ID VDS 1.2 1.2 1.0 0.8 0.6 0.4 4.5V 0.6 4V 0.4 0.6 0.4 0.2 3V 0 40 60 80 100 120 140 160 0 0 400 300 200 100 0 3 4 5 6 Gate to source voltage VGS (V) RDS(on) Ta 6 ID=500mA 5 4 VGS=5V 3 10V 2 1 0 –50 –25 0 25 50 75 Ambient temperature Ta (˚C) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 500 2 6 8 10 0 2 120 80 60 40 Ciss 20 Coss Crss 0 1 3 10 30 100 300 6 8 10 RDS(on) VGS VGS=0 f=1MHz Ta=25˚C 100 4 Gate to source voltage VGS (V) Ciss, Coss, Crss VDS VDS=15V f=1kHz Ta=25˚C 1 4 Drain to source voltage VDS (V) | Yfs | VGS 600 0 2 1000 Drain to source voltage VDS (V) Drain to source ON-resistance RDS(on) (Ω) 20 Ambient temperature Ta (˚C) Forward transfer admittance |Yfs| (mS) 0.8 3.5V 0.2 0 Drain to source ON-resistance RDS(on) (Ω) 1.0 5V 0.8 0.2 0 2 VDS=10V Ta=25˚C VGS=5.5V 1.0 Drain current ID (A) 1.4 1.2 Ta=25˚C Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. Drain current ID (A) Allowable power dissipation PD (W) 1.6 ID VGS 6 ID=500mA 5 4 3 Ta=75˚C 2 25˚C –25˚C 1 0 0 4 8 12 16 20 Gate to source voltage VGS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. 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