Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
Very low VF MEGA Schottky barrier
rectifiers
Product data sheet
2003 Aug 20
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
FEATURES
QUICK REFERENCE DATA
• Very low forward voltage
SYMBOL
• High surge current
IF
forward current
VR
reverse voltage
• Ultra small plastic SMD package.
PARAMETER
MAX.
UNIT
0.5
A
PMEG2005AEV
20
V
APPLICATIONS
PMEG3005AEV
30
V
• Low voltage rectification
PMEG4005AEV
40
V
• High efficiency DC/DC conversion
• Voltage clamping
PINNING
• Inverse polarity protection
PIN
• Low power consumption applications.
DESCRIPTION
1
cathode
2
cathode
DESCRIPTION
3
anode
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
4
anode
5
cathode
6
cathode
handbook, halfpage
6
5
4
1, 2
5, 6
3, 4
MHC310
1
Fig.1
2
3
Simplified outline (SOT666 and symbol).
MARKING
TYPE NUMBER
MARKING CODE
PMEG2005AEV
G1
PMEG3005AEV
G2
PMEG4005AEV
G3
RELATED PRODUCTS
TYPE NUMBER
DESCRIPTION
FEATURE
PMEGxx05AEA
0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier
SOD323 (SC-76) package
PMEG2005EB
0.5 A; 20 V very low VF MEGA Schottky rectifier
SOD523 (SC-79) package
PMEG2010EA
1 A; 20 V very low VF MEGA Schottky rectifier
higher forward current
2003 Aug 20
2
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
continuous reverse voltage
PMEG2005AEV
−
20
V
PMEG3005AEV
−
30
V
PMEG4005AEV
−
40
V
IF
continuous forward current
note 1
−
0.5
A
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.5; note 2
−
3.5
A
IFSM
non-repetitive peak forward current
tp = 8 ms; square wave; note 2
−
10
A
Tj
junction temperature
note 3
−
150
°C
Tamb
operating ambient temperature
note 3
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Notes
1. Refer to SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel.
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
(PR) are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR
and IF(AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to
ambient
in free air; notes 1 and 2
405
K/W
in free air; notes 2 and 3
215
K/W
thermal resistance from junction to
soldering point
note 4
80
K/W
Notes
1. Refer to SOT666 standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF(AV) rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
2003 Aug 20
3
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
PMEG2005AEV PMEG3005AEV PMEG4005AEV
SYMBOL
PARAMETER
CONDITIONS
UNIT
TYP.
VF
IR
Cd
forward voltage
continuous reverse
current
diode capacitance
TYP.
MAX.
TYP.
MAX.
IF = 0.1 mA
90
130
90
130
95
130
mV
IF = 1 mA
150
190
150
200
155
210
mV
IF = 10 mA
210
240
215
250
220
270
mV
IF = 100 mA
280
330
285
340
295
350
mV
IF = 500 mA
355
390
380
430
420
470
mV
VR = 10 V; note 1
15
40
12
30
7
20
μA
VR = 20 V; note 1
40
200
−
−
−
−
μA
VR = 30 V; note 1
−
−
40
150
−
−
μA
VR = 40 V; note 1
−
−
−
−
30
100
μA
VR = 1 V; f = 1 MHz
66
80
55
70
43
50
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Aug 20
MAX.
4
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
GRAPHICAL DATA
MDB675
103
handbook, halfpage
MDB676
105
handbook, halfpage
IR
(μA)
IF
(mA)
(1)
104
102
(1)
(2)
103
(3)
(2)
10
102
1
(3)
10
10−1
0
0.2
0.4
VF (V)
1
0.6
0
5
PMEG2005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
MDB677
150
handbook, halfpage
Cd
(pF)
100
50
0
5
10
15
VR (V)
20
PMEG2005AEV
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
15
VR (V)
20
PMEG2005AEV
(1) Tamb = 150 °C.
Forward current as a function of forward
voltage; typical values.
0
10
5
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
MDB672
103
handbook, halfpage
MDB673
105
handbook, halfpage
IR
(μA)
IF
(mA)
(1)
104
102
(1)
(2)
103
(3)
(2)
10
102
1
(3)
10
10−1
0
0.2
0.4
VF (V)
1
0.6
0
10
PMEG3005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
PMEG3005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.5
Fig.6
Forward current as a function of forward
voltage; typical values.
MDB674
120
handbook, halfpage
Cd
(pF)
80
40
0
0
5
10
15
20
VR (V)
PMEG3005AEV
f = 1 MHz; Tamb = 25 °C.
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
6
20
VR (V)
30
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
MDB669
103
handbook, halfpage
MDB670
105
handbook, halfpage
IR
(μA)
IF
(mA)
(1)
104
102
(1)
(2)
103
(3)
(2)
10
102
1
10
10−1
0
0.2
0.4
VF (V)
(3)
1
0.6
0
10
PMEG4005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
PMEG4005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.8
Fig.9
Forward current as a function of forward
voltage; typical values.
MDB671
100
Cd
(pF)
handbook, halfpage
80
60
40
20
0
0
5
10
15
VR (V)
20
PMEG4005AEV
f = 1 MHz; Tamb = 25 °C.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
7
20
30
VR (V)
40
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2003 Aug 20
EUROPEAN
PROJECTION
8
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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reserves the right to make changes to information
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Aug 20
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp10
Date of release: 2003 Aug 20
Document order number: 9397 750 11687
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