Transistors with built-in Resistor UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Silicon NPN epitaxial planer transistor Unit: mm For digital circuits 1.6±0.15 0.4 ● ● ● ● ● ● ● ● 0.2 -0.05 +0.1 ■ Absolute Maximum Ratings 0.5 1.0±0.1 1.6±0.1 0.5 0 to 0.1 +0.1 0.15 -0.05 0.45±0.1 0.3 0.27±0.02 ● +0.05 0.85–0.03 +0.05 ● 0.70–0.03 ● 0 to 0.1 ● 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 ● Unit: mm 0.80 ● +0.03 ● 0.2±0.1 0.12–0.01 ● 3 1 : Base 2 : Emitter 3 : Collector SS–Mini Type Pakage +0.05 ● 1.60–0.03 ● (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 100kΩ — 47kΩ 0.80 ● Marking Symbol (R1) UN9211 8A 10kΩ UN9212 8B 22kΩ UN9213 8C 47kΩ UN9214 8D 10kΩ UN9215 8E 10kΩ UN9216 8F 4.7kΩ UN9217 8H 22kΩ UN9218 8I 0.51kΩ UN9219 8K 1kΩ UN9210 8L 47kΩ UN921D 8M 47kΩ UN921E 8N 47kΩ UN921F 8O 4.7kΩ UN921K 8P 10kΩ UN921L 8Q 4.7kΩ UNR921M EL 2.2kΩ UNR921N EX 4.7kΩ UNR921AJ 8X 100kΩ UNR921BJ 8Y 100kΩ UNR921CJ 8Z — 1 2 ■ Resistance by Part Number ● 0.4 0.50 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-Mini type package, allowing automatic insertion through tape packing and magazine packing. 0.75±0.15 ● 1.00±0.05 ■ 0.8±0.1 Features 1 : Base 2 : Emitter 3 : Collector SS–Mini Flat Type Pakage (J type) (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Total power dissipation PT 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 to +125 ˚C Internal Connection C R1 B R2 E 1 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Emitter cutoff current Conditions min typ Unit ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA UN9211 0.5 UN9212/9214/921E/921D 0.2 UN9213/UNR921M/921N/UNR921AJ UN9215/9216/9217/9210/UNR921BJ 0.1 IEBO VEB = 6V, IC = 0 0.01 UN921F/921K 1.0 UN9219 1.5 UN9218/921L/UNR921CJ mA 2.0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V UN9211 Forward current transfer ratio 35 UN9212/921E 60 UN9213/9214/921M/UNR921AJ/921CJ 80 UN9215*/9216*/9217*/9210*/UNR921BJ hFE VCE = 10V, IC = 5mA UN921F/921D/9219 UN9218/921K/921L 20 UN921N 80 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ UN9213/921K/UNR921BJ UN921D VOL UN921E 460 400 0.25 4.9 fT V V VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 VOC = 5V, VB = 3.5V, R1 = 1kΩ 0.2 VCC = 5V, VB = 10V, R1 = 1kΩ 0.2 VCC = 5V, VB = 6V, RL = 1kΩ 0.2 VCC = 5V, VB = 5V, RL = 1kΩ UNR921AJ Transition frequency Input resistance 160 30 Output voltage low level V 0.2 VCB = 10V, IE = –2mA, f = 200MHz 150 UN9211/9214/9215/921K 10 UN9212/9217 22 UN9213/921D/921E/9210 MHz 47 UN9216/921F/921L/UNR921N R1 (–30%) UN9218 4.7 0.51 UN9219/UNR921M 1 UNR921AJ/921BJ 100 * hFE rank classification (UN9215/9216/9217/9210) 2 max Rank Q R S hFE 160 to 260 210 to 340 290 to 460 (+30%) kΩ UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ ■ Electrical Characteristics (continued) Parameter Symbol (Ta=25˚C) Conditions min max UN9211/9212/9213/921L 0.8 1.0 1.2 UN9214 0.17 0.21 0.25 UN9218/9219 0.08 0.1 0.12 UN921D Resistance ratio typ 4.7 UN921E 2.14 R1/R2 UN921F 0. 47 UN921K 2.13 UN921M 0.047 UN921N 0.1 UNR921AJ 1.0 Resistance between Emitter to Base Unit UNR921CJ R2 –30% 47 30% kΩ 3 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Common characteristics chart PT — Ta Total power dissipation PT (mW) 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN9211 IC — VCE VCE(sat) — IC Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA 140 0.7mA 0.6mA 0.5mA 120 100 0.4mA 0.3mA 80 60 0.2mA 40 20 0.1mA Collector to emitter saturation voltage VCE(sat) (V) 100 0 0 2 4 6 8 10 IC/IB=10 30 10 3 1 0.3 25˚C –25˚C 0.03 Collector to emitter voltage VCE (V) Ta=75˚C 200 25˚C –25˚C 100 3 10 30 1 100 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 1 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 4 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 0.3 Cob — VCB 6 Ta=75˚C 0.1 0.01 0.1 12 hFE — IC 400 Forward current transfer ratio hFE 160 30 100 VCB (V) 1 0.4 0.03 0.6 0.8 1.0 Input voltage VIN 1.2 (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Characteristics charts of UN9212 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 140 IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 0.5mA 100 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 2 4 6 8 10 IC/IB=10 30 10 3 1 0.3 25˚C –25˚C 0.03 0.01 0.1 12 Collector to emitter voltage VCE (V) 1 3 10 Ta=75˚C 200 25˚C –25˚C 100 30 100 1 3 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 4 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 0.3 Cob — VCB 6 Ta=75˚C 0.1 0 0 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN9213 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 120 0.9mA 0.8mA 0.7mA 0.6mA 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 400 –25˚C VCE=10V Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 350 Ta=75˚C 300 25˚C 250 –25˚C 200 150 100 50 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 5 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Cob — VCB IO — VIN 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN9214 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 80 0.4mA 60 0.3mA 40 0.2mA 20 0.1mA 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 0 –25˚C 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 3 10 30 1 100 3 4 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 1 10000 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 6 300 0 0.3 Cob — VCB 5 VCE=10V 350 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Characteristics charts of UN9215 IC — VCE VCE(sat) — IC 100 120 0.7mA 0.6mA 0.5mA 100 0.4mA 80 0.3mA 60 0.2mA 40 0.1mA 20 2 4 6 8 10 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0 0 12 0.03 –25˚C 0.01 0.1 0.3 1 3 10 Ta=75˚C 250 200 25˚C 150 –25˚C 100 50 30 1 100 3 4 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 300 0 Cob — VCB 5 VCE=10V 350 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE 140 Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.03 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN9216 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 400 VCE=10V Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 350 Ta=75˚C 300 25˚C 250 –25˚C 200 150 100 50 –25˚C 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 7 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Cob — VCB 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 IO — VIN 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) VCB (V) Characteristics charts of UN9217 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 100 80 0.4mA 0.3mA 0.2mA 60 40 20 0.1mA 0 0 2 4 6 8 10 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 12 Collector to emitter voltage VCE (V) 250 200 Ta=75˚C 150 25˚C –25˚C 100 50 1 3 10 30 100 1 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 300 0 0.3 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 8 350 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V –25˚C Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA Collector to emitter saturation voltage VCE(sat) (V) 120 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Characteristics charts of UN9218 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 160 120 0.6mA 0.5mA 0.4mA 80 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 Ta=75˚C 80 25˚C –25˚C 40 3 10 30 100 1 Collector current IC (mA) 3 4 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 120 0 1 0.3 Cob — VCB 5 VCE=10V –25˚C 0.01 0.1 12 Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE 240 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.03 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN9219 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 160 120 0.5mA 0.4mA 80 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC 160 IC/IB=10 30 VCE=10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 120 Ta=75˚C 80 25˚C –25˚C 40 –25˚C 0.01 0.1 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 9 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Cob — VCB IO — VIN 4 3 2 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 VIN — IO 10000 Output current IO (µA) Collector output capacitance Cob (pF) 6 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 0.03 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) VCB (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN9210 IC — VCE VCE(sat) — IC 100 Ta=25˚C Collector current IC (mA) 50 40 30 0.4mA 0.5mA 0.6mA 0.7mA 0.3mA 0.1mA 20 10 0 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 0.01 0.1 0.3 Collector to emitter voltage VCE (V) Ta=75˚C 250 25˚C 200 –25˚C 150 100 50 3 10 30 100 1 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 1 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 10 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 350 0 Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 60 30 100 VCB (V) 1 0.4 0.03 0.6 0.8 1.0 Input voltage VIN 1.2 (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Characteristics charts of UN921D IC — VCE VCE(sat) — IC Collector current IC (mA) 25 IB=1.0mA 20 15 0.2mA 0.1mA 10 5 Collector to emitter saturation voltage VCE(sat) (V) 100 Ta=25˚C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA 2 4 6 8 10 10 3 1 0.3 –25˚C 0.03 0.01 0.1 Collector to emitter voltage VCE (V) 25˚C –25˚C 80 40 10 30 100 1 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 3 10000 4 Ta=75˚C 120 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 1 0.3 Cob — VCB 6 Ta=75˚C 25˚C 0.1 12 160 IC/IB=10 30 0 0 hFE — IC Forward current transfer ratio hFE 30 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 1.5 100 VCB (V) 2.0 2.5 3.0 3.5 0.01 0.1 4.0 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN921E IC — VCE VCE(sat) — IC Collector current IC (mA) 50 40 0.3mA 0.4mA 0.5mA 30 0.2mA 0.1mA 20 10 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 160 VCE=10V Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25˚C 0.9mA 0.6mA 0.8mA 100 Collector to emitter saturation voltage VCE(sat) (V) 60 Ta=75˚C 120 25˚C –25˚C 80 40 –25˚C 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 11 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Cob — VCB IO — VIN 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 1.5 100 VCB (V) 2.0 2.5 3.0 3.5 0.01 0.1 4.0 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN921F IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 200 0.9mA 0.8mA 0.7mA 0.6mA 160 120 IB=1.0mA 0.5mA 80 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 IC/IB=10 30 10 3 Ta=75˚C 1 0.3 25˚C 0.1 0.03 0.01 0.1 12 Collector to emitter voltage VCE (V) 25˚C –25˚C 40 1 3 10 30 1 100 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C 80 0 0.3 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 12 120 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V –25˚C Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Characteristics charts of UN921K IC — VCE VCE(sat) — IC 240 Collector current IC (mA) 200 160 IB=1.2mA 120 1.0mA 0.8mA 80 0.6mA 0.4mA 40 0.2mA 0 0 2 4 6 8 10 IC/IB=10 10 1 25˚C –25˚C 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 1 3 10 30 100 300 1000 1 Collector current IC (mA) 3 10 30 100 300 1000 Collector current IC (mA) VIN — IO 100 f=1MHz IE=0 Ta=25˚C 4 3 2 VO=0.2V Ta=25˚C 30 Input voltage VIN (V) Collector output capacitance Cob (pF) VCE=10V 0.01 12 Cob — VCB 5 Ta=75˚C 0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 240 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 100 10 3 1 0.3 0.1 1 0.03 0 3 1 10 30 Collector to base voltage 0.01 0.1 100 VCB (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN921L IC — VCE VCE(sat) — IC 240 Collector current IC (mA) 200 160 IB=1.0mA 0.8mA 120 0.6mA 80 0.4mA 40 0.2mA 0 hFE — IC IC/IB=10 10 1 Ta=75˚C 25˚C 0.1 –25˚C 0.01 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 240 VCE=10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 100 200 Ta=75˚C 160 25˚C 120 –25˚C 80 40 0 1 3 10 30 100 300 Collector current IC (mA) 1000 1 3 10 30 100 300 1000 Collector current IC (mA) 13 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Cob — VCB IO — VIN 100 VO=0.2V Ta=25˚C f=1MHz IE=0 Ta=25˚C 5 10 Input voltage VIN (V) Collector output capacitance Cob (pF) 6 4 3 2 1 0.1 1 0.01 0.1 0 3 1 10 30 100 1 0.3 3 10 30 100 Output current IO (mA) VCB (V) Collector to base voltage Characteristics charts of UN921M IC — VCE VCE(sat) — IC 10 Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 160 0.6mA 0.5mA 0.4mA 0.3mA 120 0.2mA 80 0.1mA 40 IC/IB=10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 –25˚C 0.01 0.003 0 2 4 6 8 10 1 12 300 Ta=75˚C 25˚C 200 –25˚C 100 3 10 30 100 300 1 1000 Cob — VCB 3 IO — VIN 104 5 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) Collector current IC (mA) Collector to emitter voltage VCE (V) VO=0.2V Ta=25˚C 30 4 3 2 103 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 400 0 0.001 0 102 101 10 3 1 0.3 0.1 1 0.03 0 0.1 0.3 1 3 10 Collector to base voltage 14 VCE=10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 hFE — IC 500 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Characteristics charts of UN921N IC — VCE VCE(sat) — IC 10 Collector current IC (mA) 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 120 100 80 0.3mA 60 0.2mA 40 0.1mA 20 VCE=10V 1 Ta=75˚C 0.1 25˚C –25˚C 0.01 0 0 2 4 6 8 10 100 25˚C 240 –25˚C 160 80 1000 1 3 2 100 1000 VIN — IO 100 VO=5V Ta=25˚C 1000 Input voltage VIN (V) Output current IO (µA) 4 10 Collector current IC (mA) IO — VIN 10000 f=1MHz IE=0 Ta=25˚C 5 Ta=75˚C 320 Collector current IC (mA) Cob — VCB 6 400 0 10 1 12 Collector to emitter voltage VCE (V) Collector output capacitance Cob (pF) 480 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 hFE — IC 100 10 VO=0.2V Ta=25˚C 10 1 0.1 1 0 1 10 Collector to base voltage 100 VCB (V) 1 0.4 0.6 0.8 1 1.2 Input voltage VIN (V) 1.4 0.01 0.1 1 10 100 Output current IO (mA) 15