技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 J VCES = 1200V IC nom = 75A / ICRM = 150A 典型应用 • 太阳能应用 TypicalApplications • SolarApplications 电气特性 • 低开关损耗 ElectricalFeatures • LowSwitchingLosses 机械特性 • 低热阻的三氧化二铝（Al2O3衬底 • 集成NTC温度传感器 • 紧凑型设计 • PressFIT压接技术 MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • IntegratedNTCtemperaturesensor • Compactdesign • PressFITContactTechnology ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 旁路二极管/Bypass-Diode 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V 最大正向均方根电流(每芯片) MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 50 A 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 60 A 正向浪涌电流 Surgeforwardcurrent tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C IFSM 600 480 A A I2t-值 I²t-value tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C I²t 1800 1150 A²s A²s 特征值/CharacteristicValues min. typ. max. VF 0,80 V IR 0,10 mA 每个二极管/perdiode RthJC 0,40 0,45 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,40 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 正向电压 Forwardvoltage Tvj = 150°C, IF = 50 A 反向电流 Reversecurrent Tvj = 150°C, VR = 1200 V 结－外壳热阻 Thermalresistance,junctiontocase 125 °C 反极性保护二极管A/Inverse-polarityprotectiondiodeA 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V 最大正向均方根电流(每芯片) MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 50 A 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 60 A 正向浪涌电流 Surgeforwardcurrent tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C IFSM 360 290 A A I2t-值 I²t-value tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C I²t 650 420 A²s A²s 特征值/CharacteristicValues min. typ. max. VF 0,95 V IR 0,10 mA 每个二极管/perdiode RthJC 0,80 0,90 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,80 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 正向电压 Forwardvoltage Tvj = 150°C, IF = 30 A 反向电流 Reversecurrent Tvj = 150°C, VR = 1200 V 结－外壳热阻 Thermalresistance,junctiontocase 2 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 反极性保护二极管B/Inverse-polarityprotectiondiodeB 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V 最大正向均方根电流(每芯片) MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 30 A 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 60 A 正向浪涌电流 Surgeforwardcurrent tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C IFSM 290 245 A A I2t-值 I²t-value tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C I²t 420 300 A²s A²s 特征值/CharacteristicValues min. typ. max. VF 1,00 V IR 0,10 mA 每个二极管/perdiode RthJC 1,20 1,35 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,15 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 正向电压 Forwardvoltage Tvj = 150°C, IF = 20 A 反向电流 Reversecurrent Tvj = 150°C, VR = 1200 V 结－外壳热阻 Thermalresistance,junctiontocase 3 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 IGBT,斩波器/IGBT-Chopper 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 25 50 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 50 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 230 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues min. 集电极－发射极饱和电压 Collector-emittersaturationvoltage IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V 栅极阈值电压 Gatethresholdvoltage IC = 1,00 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge Tvj = 25°C Tvj = 125°C V 1200 VCE sat A A typ. max. 2,10 2,45 2,65 V V VGEth 4,5 5,5 6,5 V VGE = -15 V ... +15 V QG 11,0 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 2,00 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,064 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA td on 0,038 0,038 0,038 µs µs µs tr 0,014 0,018 0,02 µs µs µs td off 0,30 0,34 0,36 µs µs µs tf 0,06 0,12 0,14 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = ±15 V RGon = 10 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 25 A, VCE = 600 V VGE = ±15 V RGon = 10 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = ±15 V RGoff = 10 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 25 A, VCE = 600 V VGE = ±15 V RGoff = 10 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 25 A, VCE = 600 V, LS = 40 nH Tvj = 25°C VGE = ±15 V, di/dt = 1150 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 10 Ω Tvj = 150°C Eon 0,52 0,65 0,67 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 25 A, VCE = 600 V, LS = 40 nH Tvj = 25°C VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 10 Ω Tvj = 150°C Eoff 1,15 1,70 1,90 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt ISC 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,60 0,65 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,50 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 4 tP ≤ 10 µs, Tvj = 125°C 150 150 A °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 Diode-斩波器/Diode-Chopper 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM 1200 V IF 15 A IFRM 30 A I²t 20,5 A²s 特征值/CharacteristicValues min. typ. max. 1,60 2,20 1,95 正向电压 Forwardvoltage IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V Tvj = 25°C Tvj = 125°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 15 A, - diF/dt = 1150 A/µs (Tvj=150°C) VR = 600 V Tvj = 25°C Tvj = 125°C IRM 5,00 5,00 A A 恢复电荷 Recoveredcharge IF = 15 A, - diF/dt = 1150 A/µs (Tvj=150°C) VR = 600 V Tvj = 25°C Tvj = 125°C Qr 0,15 0,25 µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 15 A, - diF/dt = 1150 A/µs (Tvj=150°C) VR = 600 V Tvj = 25°C Tvj = 125°C Erec 0,03 0,03 mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,05 1,20 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,80 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 kΩ ∆R/R -5 5 % P25 20,0 mW VF V V °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 5 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 10,0 5,0 mm 相对电痕指数 Comperativetrackingindex CTI > 200 VISOL kV 2,5 min. typ. max. LsCE 30 nH RCC'+EE' 5,00 mΩ 逆变器,制动-斩波器/inverter,brake-chopper 整流器/rectifier Tvj max 175 150 °C °C 在开关状态下温度 Temperatureunderswitchingconditions 逆变器,制动-斩波器/inverter,brake-chopper 整流器/rectifier Tvj op -40 -40 150 125 °C °C 储存温度 Storagetemperature Tstg -40 125 °C 重量 Weight G 24 g 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 最大结温 Maximumjunctiontemperature Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. Designed for storage conditions according to Infineon TR14 (Application Note “Storage of Products Supplied by Infineon Technologies) Designed for climate conditions without condensation or precipitation preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 6 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 正向偏压特性旁路二极管（典型) forwardcharacteristicofBypass-Diode(typical) IF=f(VF) 正向偏压特性反极性保护二极管A（典型) forwardcharacteristicofInverse-polarityprotectiondiodeA (typical) IF=f(VF) 100 60 Tvj = 25°C Tvj = 150°C 90 Tvj = 25°C Tvj = 150°C 50 80 70 40 IF [A] IF [A] 60 50 30 40 20 30 20 10 10 0 0,0 0,2 0,4 0,6 VF [V] 0,8 1,0 0 1,2 正向偏压特性反极性保护二极管B（典型) forwardcharacteristicofInverse-polarityprotectiondiodeB (typical) IF=f(VF) 0,0 0,2 0,4 0,6 0,8 VF [V] 1,0 1,2 1,4 输出特性IGBT,斩波器（典型) outputcharacteristicIGBT-Chopper(typical) IC=f(VCE) VGE=15V 40 50 Tvj = 25°C Tvj = 150°C 35 Tvj = 25°C Tvj = 125°C 45 40 30 35 30 IC [A] IF [A] 25 20 25 20 15 15 10 10 5 0 5 0,0 0,2 0,4 0,6 0,8 VF [V] 1,0 1,2 0 1,4 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 7 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 3,0 3,5 4,0 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 输出特性IGBT,斩波器（典型) outputcharacteristicIGBT-Chopper(typical) IC=f(VCE) Tvj=150°C 开关损耗IGBT,斩波器（典型) switchinglossesIGBT-Chopper(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=10Ω,RGoff=10Ω,VCE=600V 50 4,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 45 40 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 3,5 3,0 35 2,5 E [mJ] IC [A] 30 25 20 2,0 1,5 15 1,0 10 0,5 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 0,0 5,0 开关损耗IGBT,斩波器（典型) switchinglossesIGBT-Chopper(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=25A,VCE=600V 0 5 10 15 20 25 30 IC [V] 35 40 45 50 瞬态热阻抗IGBT,斩波器 transientthermalimpedanceIGBT-Chopper ZthJH=f(t) 4,0 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 3,5 ZthJH : IGBT 3,0 1 ZthJH [K/W] E [mJ] 2,5 2,0 1,5 0,1 1,0 i: 1 2 3 4 ri[K/W]: 0,048 0,109 0,419 0,524 τi[s]: 0,0005 0,005 0,05 0,2 0,5 0,0 0 10 20 30 40 50 60 RG [Ω] 70 80 90 0,01 0,001 100 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 8 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 反偏安全工作区IGBT,斩波器（RBSOA） reversebiassafeoperatingareaIGBT-Chopper(RBSOA) IC=f(VCE) VGE=±15V,RGoff=10Ω,Tvj=150°C 正向偏压特性Diode-斩波器（典型) forwardcharacteristicofDiode-Chopper(typical) IF=f(VF) 60 30 IC, Modul IC, Chip Tvj = 25°C Tvj = 125°C 27 50 24 21 40 IF [A] IC [A] 18 30 15 12 20 9 6 10 3 0 0 200 400 600 800 1000 1200 0 1400 0,0 0,5 1,0 t [s] 1,5 2,0 2,5 VF [V] 开关损耗Diode-斩波器（典型) switchinglossesDiode-Chopper(typical) Erec=f(IF) RGon=10Ω,VCE=600V 开关损耗Diode-斩波器（典型) switchinglossesDiode-Chopper(typical) Erec=f(RG) IF=15A,VCE=600V 0,06 0,06 Erec, Tvj = 125°C Erec, Tvj = 125°C E [mJ] 0,04 E [mJ] 0,04 0,02 0,00 0,02 0 3 6 9 12 15 18 IF [A] 21 24 27 0,00 30 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 9 0 10 20 30 40 50 60 RG [Ω] 70 80 90 100 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 瞬态热阻抗Diode-斩波器 transientthermalimpedanceDiode-Chopper ZthJH=f(t) 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 10 100000 ZthJH : Diode Rtyp R[Ω] ZthJH [K/W] 10000 1 1000 i: 1 2 3 4 ri[K/W]: 0,23 0,397 0,721 0,503 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 100 10 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 10 0 20 40 60 80 100 TC [°C] 120 140 160 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 接线图/circuit_diagram_headline J 封装尺寸/packageoutlines Infineon preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 11 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DF75R12W1H4F_B11 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货 如果有必要，请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权 Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:3.0 12