English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
J
VCES = 1200V
IC nom = 75A / ICRM = 150A
典型应用
• 太阳能应用
TypicalApplications
• SolarApplications
电气特性
• 低开关损耗
ElectricalFeatures
• LowSwitchingLosses
机械特性
• 低热阻的三氧化二铝(Al2O3衬底
• 集成NTC温度传感器
• 紧凑型设计
• PressFIT压接技术
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• IntegratedNTCtemperaturesensor
• Compactdesign
• PressFITContactTechnology
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
旁路二极管/Bypass-Diode
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 1200
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM 50
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM 60
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
600
480
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
1800
1150
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
VF
0,80
V
IR
0,10
mA
每个二极管/perdiode
RthJC
0,40
0,45 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,40
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
正向电压
Forwardvoltage
Tvj = 150°C, IF = 50 A
反向电流
Reversecurrent
Tvj = 150°C, VR = 1200 V
结-外壳热阻
Thermalresistance,junctiontocase
125
°C
反极性保护二极管A/Inverse-polarityprotectiondiodeA
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 1200
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM 50
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM 60
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
360
290
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
650
420
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
VF
0,95
V
IR
0,10
mA
每个二极管/perdiode
RthJC
0,80
0,90 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,80
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
正向电压
Forwardvoltage
Tvj = 150°C, IF = 30 A
反向电流
Reversecurrent
Tvj = 150°C, VR = 1200 V
结-外壳热阻
Thermalresistance,junctiontocase
2
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
反极性保护二极管B/Inverse-polarityprotectiondiodeB
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 1200
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM 30
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM 60
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
290
245
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
420
300
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
VF
1,00
V
IR
0,10
mA
每个二极管/perdiode
RthJC
1,20
1,35 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,15
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
正向电压
Forwardvoltage
Tvj = 150°C, IF = 20 A
反向电流
Reversecurrent
Tvj = 150°C, VR = 1200 V
结-外壳热阻
Thermalresistance,junctiontocase
3
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
IGBT,斩波器/IGBT-Chopper
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
25
50
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
50
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
230
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
min.
集电极-发射极饱和电压
Collector-emittersaturationvoltage
IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
栅极阈值电压
Gatethresholdvoltage
IC = 1,00 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
Tvj = 25°C
Tvj = 125°C
V
1200
VCE sat
A
A
typ.
max.
2,10
2,45
2,65
V
V
VGEth
4,5
5,5
6,5
V
VGE = -15 V ... +15 V
QG
11,0
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
2,00
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,064
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
td on
0,038
0,038
0,038
µs
µs
µs
tr
0,014
0,018
0,02
µs
µs
µs
td off
0,30
0,34
0,36
µs
µs
µs
tf
0,06
0,12
0,14
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 25 A, VCE = 600 V, LS = 40 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 1150 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 10 Ω
Tvj = 150°C
Eon
0,52
0,65
0,67
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 25 A, VCE = 600 V, LS = 40 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 10 Ω
Tvj = 150°C
Eoff
1,15
1,70
1,90
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,60
0,65 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,50
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
4
tP ≤ 10 µs, Tvj = 125°C
150
150
A
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
Diode-斩波器/Diode-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 1200
V
IF
15
A
IFRM
30
A
I²t
20,5
A²s
特征值/CharacteristicValues
min.
typ.
max.
1,60
2,20
1,95
正向电压
Forwardvoltage
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 15 A, - diF/dt = 1150 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
IRM
5,00
5,00
A
A
恢复电荷
Recoveredcharge
IF = 15 A, - diF/dt = 1150 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Qr
0,15
0,25
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 15 A, - diF/dt = 1150 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Erec
0,03
0,03
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,05
1,20 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,80
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
VF
V
V
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
5
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
10,0
5,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
VISOL kV
2,5
min.
typ.
max.
LsCE
30
nH
RCC'+EE'
5,00
mΩ
逆变器,制动-斩波器/inverter,brake-chopper
整流器/rectifier
Tvj max
175
150
°C
°C
在开关状态下温度
Temperatureunderswitchingconditions
逆变器,制动-斩波器/inverter,brake-chopper
整流器/rectifier
Tvj op
-40
-40
150
125
°C
°C
储存温度
Storagetemperature
Tstg
-40
125
°C
重量
Weight
G
24
g
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
最大结温
Maximumjunctiontemperature
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
Designed for storage conditions according to Infineon TR14 (Application Note “Storage of Products Supplied by Infineon Technologies)
Designed for climate conditions without condensation or precipitation
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
6
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
正向偏压特性旁路二极管(典型)
forwardcharacteristicofBypass-Diode(typical)
IF=f(VF)
正向偏压特性反极性保护二极管A(典型)
forwardcharacteristicofInverse-polarityprotectiondiodeA
(typical)
IF=f(VF)
100
60
Tvj = 25°C
Tvj = 150°C
90
Tvj = 25°C
Tvj = 150°C
50
80
70
40
IF [A]
IF [A]
60
50
30
40
20
30
20
10
10
0
0,0
0,2
0,4
0,6
VF [V]
0,8
1,0
0
1,2
正向偏压特性反极性保护二极管B(典型)
forwardcharacteristicofInverse-polarityprotectiondiodeB
(typical)
IF=f(VF)
0,0
0,2
0,4
0,6
0,8
VF [V]
1,0
1,2
1,4
输出特性IGBT,斩波器(典型)
outputcharacteristicIGBT-Chopper(typical)
IC=f(VCE)
VGE=15V
40
50
Tvj = 25°C
Tvj = 150°C
35
Tvj = 25°C
Tvj = 125°C
45
40
30
35
30
IC [A]
IF [A]
25
20
25
20
15
15
10
10
5
0
5
0,0
0,2
0,4
0,6
0,8
VF [V]
1,0
1,2
0
1,4
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
7
0,0
0,5
1,0
1,5
2,0
2,5
VCE [V]
3,0
3,5
4,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
输出特性IGBT,斩波器(典型)
outputcharacteristicIGBT-Chopper(typical)
IC=f(VCE)
Tvj=150°C
开关损耗IGBT,斩波器(典型)
switchinglossesIGBT-Chopper(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=10Ω,RGoff=10Ω,VCE=600V
50
4,0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
45
40
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
3,5
3,0
35
2,5
E [mJ]
IC [A]
30
25
20
2,0
1,5
15
1,0
10
0,5
5
0
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
0,0
5,0
开关损耗IGBT,斩波器(典型)
switchinglossesIGBT-Chopper(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=25A,VCE=600V
0
5
10
15
20
25 30
IC [V]
35
40
45
50
瞬态热阻抗IGBT,斩波器
transientthermalimpedanceIGBT-Chopper
ZthJH=f(t)
4,0
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
3,5
ZthJH : IGBT
3,0
1
ZthJH [K/W]
E [mJ]
2,5
2,0
1,5
0,1
1,0
i:
1
2
3
4
ri[K/W]: 0,048 0,109 0,419 0,524
τi[s]:
0,0005 0,005 0,05 0,2
0,5
0,0
0
10
20
30
40
50 60
RG [Ω]
70
80
90
0,01
0,001
100
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
8
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
反偏安全工作区IGBT,斩波器(RBSOA)
reversebiassafeoperatingareaIGBT-Chopper(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=10Ω,Tvj=150°C
正向偏压特性Diode-斩波器(典型)
forwardcharacteristicofDiode-Chopper(typical)
IF=f(VF)
60
30
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
27
50
24
21
40
IF [A]
IC [A]
18
30
15
12
20
9
6
10
3
0
0
200
400
600
800
1000
1200
0
1400
0,0
0,5
1,0
t [s]
1,5
2,0
2,5
VF [V]
开关损耗Diode-斩波器(典型)
switchinglossesDiode-Chopper(typical)
Erec=f(IF)
RGon=10Ω,VCE=600V
开关损耗Diode-斩波器(典型)
switchinglossesDiode-Chopper(typical)
Erec=f(RG)
IF=15A,VCE=600V
0,06
0,06
Erec, Tvj = 125°C
Erec, Tvj = 125°C
E [mJ]
0,04
E [mJ]
0,04
0,02
0,00
0,02
0
3
6
9
12
15 18
IF [A]
21
24
27
0,00
30
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
9
0
10
20
30
40
50 60
RG [Ω]
70
80
90
100
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
瞬态热阻抗Diode-斩波器
transientthermalimpedanceDiode-Chopper
ZthJH=f(t)
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
10
100000
ZthJH : Diode
Rtyp
R[Ω]
ZthJH [K/W]
10000
1
1000
i:
1
2
3
4
ri[K/W]: 0,23
0,397 0,721 0,503
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
100
10
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
10
0
20
40
60
80
100
TC [°C]
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
Infineon
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
11
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DF75R12W1H4F_B11
使用条件和条款
使用条件和条款
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preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:3.0
12
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