English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
EasyPACK模块采用第二类中点钳位拓扑(NPC2)带有pressfit压接管脚和温度检测NTC
EasyPACKmodulewithactive"NeutralPointClamp2"topologyandPressFIT/NTC
VCES = 1200V
IC nom = 75A / ICRM = 150A
典型应用
• 三电平应用
• 太阳能应用
TypicalApplications
• 3-Level-Applications
• SolarApplications
电气特性
• 高速IGBTH3
• 低开关损耗
• Tvjop=150°C
ElectricalFeatures
• HighSpeedIGBTH3
• LowSwitchingLosses
• Tvjop=150°C
机械特性
• PressFIT压接技术
• 符合RoHS
MechanicalFeatures
• PressFITContactTechnology
• RoHScompliant
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
IGBT,T1/T4/IGBT,T1/T4
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
集电极电流
Implementedcollectorcurrent
VCES
1200
V
ICN
150
A
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
IC nom 75
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
300
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
500
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
typ.
max.
1,55
1,70
1,75
1,75
V
V
V
5,80
6,35
V
栅极阈值电压
Gatethresholdvoltage
IC = 5,20 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
1,15
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
5,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
8,70
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,48
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 75 A, VCE = 400 V
VGE = ±15 V
RGon = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 75 A, VCE = 400 V
VGE = ±15 V
RGon = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 75 A, VCE = 400 V
VGE = ±15 V
RGoff = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 75 A, VCE = 400 V
VGE = ±15 V
RGoff = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 75 A, VCE = 400 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 2600 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 3,0 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,25
0,16
0,17
0,175
µs
µs
µs
0,03
0,035
0,035
µs
µs
µs
0,33
0,42
0,44
µs
µs
µs
0,035
0,06
0,07
µs
µs
µs
Eon
1,55
2,45
2,70
mJ
mJ
mJ
IC = 75 A, VCE = 400 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2400 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 3,0 Ω
Tvj = 150°C
Eoff
2,60
4,40
5,00
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
600
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
tP ≤ 10 µs, Tvj = 150°C
td on
tr
td off
tf
RthJC
2
0,25
0,30 K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
0,30
Tvj op
-40
K/W
150
°C
二极管,D2/D3/Diode,D2/D3
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 650
V
正向电流
Implementedforwardcurrent
IFN
125
A
连续正向直流电流
ContinuousDCforwardcurrent
IF
75
A
IFRM
250
A
I²t
1450
1400
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
1,70
VF
1,45
1,30
1,35
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
62,0
72,0
75,0
A
A
A
IF = 75 A, - diF/dt = 2600 A/µs (Tvj=150°C)
VR = 400 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
3,40
5,00
5,60
µC
µC
µC
IF = 75 A, - diF/dt = 2600 A/µs (Tvj=150°C)
VR = 400 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,60
0,95
1,10
mJ
mJ
mJ
正向电压
Forwardvoltage
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 75 A, - diF/dt = 2600 A/µs (Tvj=150°C)
VR = 400 V
VGE = -15 V
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,55
0,65 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,60
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
3
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
IGBT,T2/T3/IGBT,T2/T3
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
650
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
IC nom 75
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
150
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
215
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
typ.
max.
1,45
1,60
1,70
1,90
V
V
V
5,80
6,45
V
栅极阈值电压
Gatethresholdvoltage
IC = 1,20 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,80
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
4,60
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,145
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 75 A, VCE = 400 V
VGE = ±15 V
RGon = 5,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 75 A, VCE = 400 V
VGE = ±15 V
RGon = 5,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 75 A, VCE = 400 V
VGE = ±15 V
RGoff = 5,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 75 A, VCE = 400 V
VGE = ±15 V
RGoff = 5,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 75 A, VCE = 400 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 3600 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 5,1 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
4,95
0,025
0,025
0,025
µs
µs
µs
0,02
0,02
0,02
µs
µs
µs
0,19
0,21
0,22
µs
µs
µs
0,02
0,035
0,04
µs
µs
µs
Eon
1,30
2,10
2,30
mJ
mJ
mJ
IC = 75 A, VCE = 400 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 5400 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 5,1 Ω
Tvj = 150°C
Eoff
1,70
2,40
2,60
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
530
380
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,60
0,70 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,60
K/W
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
td on
tr
td off
tf
Tvj op
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
4
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
二极管,D1/D4/Diode,D1/D4
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
VRRM Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
1200
V
IF
50
A
IFRM
150
A
I²t
1050
985
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
2,55
VF
2,00
1,70
1,65
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
100
120
130
A
A
A
IF = 50 A, - diF/dt = 3200 A/µs (Tvj=150°C)
VR = 400 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
3,50
7,80
10,0
µC
µC
µC
IF = 50 A, - diF/dt = 3200 A/µs (Tvj=150°C)
VR = 400 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
1,10
2,50
3,30
mJ
mJ
mJ
正向电压
Forwardvoltage
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 50 A, - diF/dt = 3200 A/µs (Tvj=150°C)
VR = 400 V
VGE = -15 V
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,55
0,60 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,50
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
°C
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
10,0
5,0
mm
> 200
相对电痕指数
Comperativetrackingindex
VISOL CTI
min.
杂散电感,模块
Strayinductancemodule
LsCE
储存温度
Storagetemperature
Tstg
-40
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
40
重量
Weight
G
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
5
kV
2,5
typ.
max.
14
39
nH
125
°C
80
N
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
6
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
输出特性IGBT,T1/T4(典型)
outputcharacteristicIGBT,T1/T4(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,T1/T4(典型)
outputcharacteristicIGBT,T1/T4(typical)
IC=f(VCE)
Tvj=150°C
150
150
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
120
120
105
105
90
90
75
60
45
45
30
30
15
15
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
0
3,0
传输特性IGBT,T1/T4(典型)
transfercharacteristicIGBT,T1/T4(typical)
IC=f(VGE)
VCE=20V
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
10
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
135
105
7
90
6
E [mJ]
8
75
5
60
4
45
3
30
2
15
1
5
6
7
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
9
120
0
0,0
开关损耗IGBT,T1/T4(典型)
switchinglossesIGBT,T1/T4(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=3Ω,RGoff=3Ω,VCE=400V
150
IC [A]
75
60
0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
135
IC [A]
IC [A]
135
8
9
VGE [V]
10
11
0
12
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
7
0
15
30
45
60
75 90
IC [A]
105 120 135 150
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
开关损耗IGBT,T1/T4(典型)
switchinglossesIGBT,T1/T4(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=75A,VCE=400V
瞬态热阻抗IGBT,T1/T4
transientthermalimpedanceIGBT,T1/T4
ZthJC=f(t)
10
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
9
8
ZthJC : IGBT
7
0,1
ZthJC [K/W]
E [mJ]
6
5
4
0,01
3
2
i:
1
2
3
4
ri[K/W]: 0,0165 0,0605 0,044 0,429
τi[s]:
0,0005 0,005 0,05 0,2
1
0
0
3
6
9
12
15 18
RG [Ω]
21
24
27
0,001
0,001
30
反偏安全工作区IGBT,T1/T4(RBSOA)
reversebiassafeoperatingareaIGBT,T1/T4(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=3Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,D2/D3(典型)
forwardcharacteristicofDiode,D2/D3(typical)
IF=f(VF)
180
150
IC, Modul
IC, Chip
160
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
135
120
140
105
120
IF [A]
IC [A]
90
100
80
75
60
60
45
40
30
20
0
15
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
8
0,0
0,2
0,4
0,6
0,8
1,0 1,2
VF [V]
1,4
1,6
1,8
2,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
开关损耗二极管,D2/D3(典型)
switchinglossesDiode,D2/D3(typical)
Erec=f(IF)
RGon=3Ω,VCE=400V
开关损耗二极管,D2/D3(典型)
switchinglossesDiode,D2/D3(typical)
Erec=f(RG)
IF=75A,VCE=400V
1,6
1,4
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,4
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,3
1,2
1,1
1,2
1,0
0,9
1,0
E [mJ]
E [mJ]
0,8
0,8
0,7
0,6
0,6
0,5
0,4
0,4
0,3
0,2
0,2
0,1
0,0
0
15
30
45
60
75 90
IF [A]
0,0
105 120 135 150
瞬态热阻抗二极管,D2/D3
transientthermalimpedanceDiode,D2/D3
ZthJC=f(t)
0
3
6
9
12
15 18
RG [Ω]
21
24
27
30
输出特性IGBT,T2/T3(典型)
outputcharacteristicIGBT,T2/T3(typical)
IC=f(VCE)
VGE=15V
10
150
ZthJC : Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
135
120
105
1
IC [A]
ZthJC [K/W]
90
75
60
0,1
45
30
i:
1
2
3
4
ri[K/W]: 0,0345 0,1495 0,3105 0,6555
τi[s]:
0,0005 0,005 0,05
0,2
0,01
0,001
0,01
0,1
t [s]
1
15
0
10
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
9
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
输出特性IGBT,T2/T3(典型)
outputcharacteristicIGBT,T2/T3(typical)
IC=f(VCE)
Tvj=150°C
传输特性IGBT,T2/T3(典型)
transfercharacteristicIGBT,T2/T3(typical)
IC=f(VGE)
VCE=20V
150
150
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
135
120
105
105
90
90
IC [A]
IC [A]
120
75
60
45
45
30
30
15
15
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
0
5,0
开关损耗IGBT,T2/T3(典型)
switchinglossesIGBT,T2/T3(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=5.1Ω,RGoff=5.1Ω,VCE=400V
5
6
7
8
9
VGE [V]
10
11
12
开关损耗IGBT,T2/T3(典型)
switchinglossesIGBT,T2/T3(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=75A,VCE=400V
6,0
18
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
5,5
5,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
16
14
4,5
4,0
12
E [mJ]
3,5
E [mJ]
75
60
0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
135
3,0
2,5
2,0
10
8
6
1,5
4
1,0
2
0,5
0,0
0
15
30
45
60
75 90
IC [A]
0
105 120 135 150
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
10
0
5
10
15
20
25 30
RG [Ω]
35
40
45
50
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
瞬态热阻抗IGBT,T2/T3
transientthermalimpedanceIGBT,T2/T3
ZthJC=f(t)
反偏安全工作区IGBT,T2/T3(RBSOA)
reversebiassafeoperatingareaIGBT,T2/T3(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=5.1Ω,Tvj=150°C
10
180
ZthJC : IGBT
IC, Modul
IC, Chip
160
140
120
IC [A]
ZthJC [K/W]
1
0,1
100
80
60
40
i:
1
2
3
4
ri[K/W]: 0,036 0,132 0,096 0,936
τi[s]:
0,0005 0,005 0,05 0,2
0,01
0,001
0,01
0,1
t [s]
1
20
0
10
正向偏压特性二极管,D1/D4(典型)
forwardcharacteristicofDiode,D1/D4(typical)
IF=f(VF)
200
300
400 500
VCE [V]
600
700
800
5,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
90
80
4,0
70
3,5
60
3,0
50
2,5
40
2,0
30
1,5
20
1,0
10
0,5
0,0
0,5
1,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
4,5
E [mJ]
IF [A]
100
开关损耗二极管,D1/D4(典型)
switchinglossesDiode,D1/D4(typical)
Erec=f(IF)
RGon=5.1Ω,VCE=400V
100
0
0
1,5
VF [V]
2,0
2,5
0,0
3,0
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
11
0
10
20
30
40
50 60
IF [A]
70
80
90
100
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
开关损耗二极管,D1/D4(典型)
switchinglossesDiode,D1/D4(typical)
Erec=f(RG)
IF=50A,VCE=400V
瞬态热阻抗二极管,D1/D4
transientthermalimpedanceDiode,D1/D4
ZthJC=f(t)
5,0
10
Erec, Tvj = 125°C
Erec, Tvj = 150°C
4,5
ZthJC : Diode
4,0
3,5
1
ZthJC [K/W]
E [mJ]
3,0
2,5
2,0
0,1
1,5
1,0
i:
1
2
3
4
ri[K/W]: 0,042 0,093 0,387 0,528
τi[s]:
0,0005 0,005 0,05 0,2
0,5
0,0
0
5
10
15
20
25 30
RG [Ω]
35
40
45
0,01
0,001
50
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
120
140
160
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
12
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
Infineon
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
13
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L150R12W2H3_B11
使用条件和条款
使用条件和条款
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havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
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Changesofthisproductdatasheetarereserved.
preparedby:CM
dateofpublication:2014-11-26
approvedby:AKDA
revision:3.0
14
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