English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据/PreliminaryData
J
VCES = 1200V
IC nom = 15A / ICRM = 30A
典型应用
• 三电平应用
• 太阳能应用
TypicalApplications
• 3-Level-Applications
• SolarApplications
电气特性
• 低电感设计
• 低开关损耗
• 低VCEsat
ElectricalFeatures
• Lowinductivedesign
• LowSwitchingLosses
• LowVCEsat
机械特性
• 低热阻的三氧化二铝(Al2O3衬底
• 紧凑型设计
• PressFIT压接技术
• 集成的安装夹使安装坚固
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
• Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
15
20
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
30
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
145
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 15 A, VGE = 15 V
IC = 15 A, VGE = 15 V
IC = 15 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 0,50 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
V
1200
VCE sat
A
A
typ.
max.
2,05
2,50
2,60
2,40
V
V
V
VGEth
5,0
5,8
6,5
V
VGE = -15 V ... +15 V
QG
0,075
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
0,875
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,045
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
td on
0,04
0,04
0,04
µs
µs
µs
tr
0,025
0,026
0,027
µs
µs
µs
td off
0,27
0,31
0,32
µs
µs
µs
tf
0,02
0,03
0,035
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 15 A, VCE = 350 V
VGE = 15 V
RGon = 35 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 15 A, VCE = 350 V
VGE = 15 V
RGon = 35 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 15 A, VCE = 350 V
VGE = 15 V
RGoff = 35 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 15 A, VCE = 350 V
VGE = 15 V
RGoff = 35 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 15 A, VCE = 350 V, LS = 30 nH
VGE = 15 V, di/dt = 700 A/µs (Tvj = 150°C)
RGon = 35 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon
0,40
0,60
0,64
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 15 A, VCE = 350 V, LS = 30 nH
Tvj = 25°C
VGE = 15 V, du/dt = 2800 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 35 Ω
Tvj = 150°C
Eoff
0,37
0,53
0,54
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,95
1,05 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,80
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
2
tP ≤ 10 µs, Tvj = 150°C
48
150
A
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
15
A
IFRM
50
A
I²t
40,0
34,0
特征值/CharacteristicValues
min.
typ.
max.
1,75
1,75
1,75
2,15
A²s
A²s
正向电压
Forwardvoltage
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C)
VR = 350 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
36,0
38,0
38,0
A
A
A
恢复电荷
Recoveredcharge
IF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C)
VR = 350 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
1,05
2,10
2,40
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C)
VR = 350 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,40
0,66
0,70
mJ
mJ
mJ
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,30
1,45 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,05
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
3
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
IGBT,三电平/IGBT,3-Level
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
集电极电流
Implementedcollectorcurrent
连续集电极直流电流
ContinuousDCcollectorcurrent
VCES
650
V
ICN
30
A
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
15
25
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
60
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
150
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 15 A, VGE = 15 V
IC = 15 A, VGE = 15 V
IC = 15 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 0,30 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,20
1,25
1,25
1,45
V
V
V
VGEth
4,9
5,8
6,5
V
VGE = -15 V ... +15 V
QG
0,30
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
1,65
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,051
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
td on
0,035
0,035
0,035
µs
µs
µs
tr
0,01
0,012
0,013
µs
µs
µs
td off
0,34
0,38
0,39
µs
µs
µs
tf
0,045
0,07
0,075
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 15 A, VCE = 350 V
VGE = 15 V
RGon = 15 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 15 A, VCE = 350 V
VGE = 15 V
RGon = 15 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 15 A, VCE = 350 V
VGE = 15 V
RGoff = 15 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 15 A, VCE = 350 V
VGE = 15 V
RGoff = 15 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 15 A, VCE = 350 V, LS = 40 nH
Tvj = 25°C
VGE = 15 V, di/dt = 1300 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 15 Ω
Tvj = 150°C
Eon
0,19
0,26
0,28
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 15 A, VCE = 350 V, LS = 40 nH
Tvj = 25°C
VGE = 15 V, du/dt = 2600 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 15 Ω
Tvj = 150°C
Eoff
0,47
0,60
0,64
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
210
150
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,90
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
4
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
1,00 K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,85
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
K/W
150
°C
二极管,三电平/Diode,3-Level
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
15
A
IFRM
30
A
I²t
32,0
28,0
特征值/CharacteristicValues
min.
正向电压
Forwardvoltage
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 15 A, - diF/dt = 700 A/µs (Tvj=150°C)
VR = 350 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
恢复电荷
Recoveredcharge
IF = 15 A, - diF/dt = 700 A/µs (Tvj=150°C)
VR = 350 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 15 A, - diF/dt = 700 A/µs (Tvj=150°C)
VR = 350 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
结-外壳热阻
Thermalresistance,junctiontocase
typ.
A²s
A²s
max.
1,45 t.b.d.
1,35
1,30
V
V
V
13,0
15,0
16,0
A
A
A
Qr
0,60
1,00
1,15
µC
µC
µC
Erec
0,12
0,18
0,22
mJ
mJ
mJ
每个二极管/perdiode
RthJC
1,95
2,15 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,35
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
5
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
13,5
7,5
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
12,0
7,5
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
VISOL kV
2,5
min.
typ.
max.
LsCE
25
nH
Tstg
-40
125
°C
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
40
-
80
N
重量
Weight
G
36
g
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
杂散电感,模块
Strayinductancemodule
储存温度
Storagetemperature
6
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
30
30
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
24
24
21
21
18
18
15
15
12
12
9
9
6
6
3
3
0
0,0
0,5
1,0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
27
IC [A]
IC [A]
27
1,5
2,0
VCE [V]
2,5
3,0
3,5
0
4,0
0,0
1,0
2,0
3,0
4,0
5,0
VCE [V]
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=35Ω,RGoff=35Ω,VCE=350V
30
2,4
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
2,2
25
2,0
1,8
20
1,6
E [mJ]
IC [A]
1,4
15
1,2
1,0
10
0,8
0,6
5
0,4
0,2
0
5
6
7
8
9
VGE [V]
10
11
0,0
12
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
7
0
3
6
9
12
15 18
IC [A]
21
24
27
30
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=15A,VCE=350V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
3,0
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
2,5
ZthJH : IGBT
ZthJH [K/W]
E [mJ]
2,0
1,5
1
1,0
0,5
0,0
i:
1
2
3
4
ri[K/W]: 0,129 0,286 0,718 0,617
τi[s]:
0,0005 0,005 0,05 0,2
0
20
40
60
80
0,1
0,001
100 120 140 160 180 200
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=35Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
40
30
IC, Modul
IC, Chip
35
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
27
24
30
21
18
IF [A]
IC [A]
25
20
15
12
15
9
10
6
5
0
3
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
8
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=15Ω,VCE=350V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=15A,VCE=350V
1,0
1,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,8
0,8
0,7
0,7
0,6
0,6
0,5
0,5
0,4
0,4
0,3
0,3
0,2
0,2
0,1
0,1
0,0
0
5
10
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,9
E [mJ]
E [mJ]
0,9
15
IF [A]
20
25
0,0
30
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
0
15
30
45
60
75 90
RG [Ω]
105 120 135 150
输出特性IGBT,三电平(典型)
outputcharacteristicIGBT,3-Level(typical)
IC=f(VCE)
VGE=15V
10
30,0
ZthJH: Diode
27,5
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
25,0
22,5
17,5
IC [A]
ZthJH [K/W]
20,0
1
15,0
12,5
10,0
7,5
5,0
i:
1
2
3
4
ri[K/W]: 0,312 0,512 0,904 0,622
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
2,5
0,0
0,00
10
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
9
0,25
0,50
0,75
1,00 1,25
VCE [V]
1,50
1,75
2,00
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
输出特性IGBT,三电平(典型)
outputcharacteristicIGBT,3-Level(typical)
IC=f(VCE)
Tvj=150°C
传输特性IGBT,三电平(典型)
transfercharacteristicIGBT,3-Level(typical)
IC=f(VGE)
VCE=20V
30
30
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
25
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
25
20
IC [A]
IC [A]
20
15
15
10
10
5
5
0
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
0
3,0
开关损耗IGBT,三电平(典型)
switchinglossesIGBT,3-Level(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=15Ω,RGoff=15Ω,VCE=350V
5
6
7
8
VGE [V]
9
10
11
开关损耗IGBT,三电平(典型)
switchinglossesIGBT,3-Level(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=15A,VCE=350V
1,2
2,00
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
1,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
1,75
1,50
0,8
E [mJ]
E [mJ]
1,25
0,6
1,00
0,75
0,4
0,50
0,2
0,25
0,0
0
5
10
15
IC [A]
20
25
0,00
30
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
10
0
15
30
45
60
75 90
RG [Ω]
105 120 135 150
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
瞬态热阻抗IGBT,三电平
transientthermalimpedanceIGBT,3-Level
ZthJH=f(t)
反偏安全工作区IGBT,三电平(RBSOA)
reversebiassafeoperatingareaIGBT,3-Level(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=15Ω,Tvj=150°C
10
40
ZthJH: IGBT
IC, Modul
IC, Chip
35
30
IC [A]
ZthJH [K/W]
25
1
20
15
10
i:
1
2
3
4
ri[K/W]: 0,142 0,309 0,719 0,58
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
5
0
10
正向偏压特性二极管,三电平(典型)
forwardcharacteristicofDiode,3-Level(typical)
IF=f(VF)
0
100
200
300
400
VCE [V]
500
600
700
开关损耗二极管,三电平(典型)
switchinglossesDiode,3-Level(typical)
Erec=f(IF)
RGon=35Ω,VCE=350V
30
0,30
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
27
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,25
24
21
0,20
E [mJ]
IF [A]
18
15
0,15
12
0,10
9
6
0,05
3
0
0,0
0,5
1,0
VF [V]
1,5
0,00
2,0
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
11
0
5
10
15
IF [A]
20
25
30
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
开关损耗二极管,三电平(典型)
switchinglossesDiode,3-Level(typical)
Erec=f(RG)
IF=15A,VCE=350V
瞬态热阻抗二极管,三电平
transientthermalimpedanceDiode,3-Level
ZthJH=f(t)
0,30
10
Erec, Tvj = 125°C
Erec, Tvj = 150°C
ZthJH: Diode
0,25
ZthJH [K/W]
E [mJ]
0,20
0,15
1
0,10
0,05
0,00
i:
1
2
3
4
ri[K/W]: 0,3013 0,7006 1,3873 0,9109
τi[s]:
0,0005 0,005 0,05
0,2
0
30
60
90
0,1
0,001
120 150 180 210 240 270 300
RG [Ω]
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
120
140
160
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
12
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
Infineon
preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
13
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L15R12W2H3_B27
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
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preparedby:CM
dateofpublication:2013-11-25
approvedby:MB
revision:2.0
14