English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
EconoPACK™4模块采用第二类中点钳位拓扑(NPC2)带有pressfit压接管脚和温度检测NTC
EconoPACK™4modulewithactive"NeutralPointClamp2"topologyandPressFIT/NTC
初步数据/PreliminaryData
VCES = 1200V
IC nom = 400A / ICRM = 800A
典型应用
• 太阳能应用
• UPS系统
TypicalApplications
• SolarApplications
• UPSSystems
电气特性
• 提高工作结温Tvjop
• 低开关损耗
• 低VCEsat
• 沟槽栅IGBT4
• Tvjop=150°C
• VCEsat带正温度系数
ElectricalFeatures
• ExtendedOperationTemperatureTvjop
• LowSwitchingLosses
• LowVCEsat
• TrenchIGBT4
• Tvjop=150°C
• VCEsatwithpositiveTemperatureCoefficient
机械特性
• 绝缘的基板
• 紧凑型设计
• PressFIT压接技术
• 标封装
MechanicalFeatures
• IsolatedBasePlate
• Compactdesign
• PressFITContactTechnology
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
IGBT,T1/T4/IGBT,T1/T4
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
400
600
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
800
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
2150
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 400 A, VGE = 15 V
IC = 400 A, VGE = 15 V
IC = 400 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 15,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,75
2,05
2,10
2,15
V
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
3,30
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
1,8
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
25,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
1,35
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
td on
0,20
0,22
0,23
µs
µs
µs
tr
0,11
0,12
0,12
µs
µs
µs
td off
0,40
0,48
0,50
µs
µs
µs
tf
0,07
0,10
0,11
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGon = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGon = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGoff = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGoff = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 400 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 2650 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,5 Ω
Tvj = 150°C
Eon
8,75
13,0
13,5
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 400 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2300 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 1,5 Ω
Tvj = 150°C
Eoff
18,0
26,0
28,5
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
2200
1900
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,046
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
2
tP ≤ 10 µs, Tvj = 25°C
tP ≤ 10 µs, Tvj = 150°C
0,07 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
二极管,D2/D3/Diode,D2/D3
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
400
A
IFRM
800
A
I²t
6700
6150
特征值/CharacteristicValues
min.
typ.
max.
1,55
1,50
1,45
1,95
A²s
A²s
正向电压
Forwardvoltage
IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 400 A, - diF/dt = 2650 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
145
205
215
A
A
A
恢复电荷
Recoveredcharge
IF = 400 A, - diF/dt = 2650 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
13,5
26,0
28,5
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 400 A, - diF/dt = 2650 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
3,40
6,35
7,15
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,077
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
3
V
V
V
0,22 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
IGBT,T2/T3/IGBT,T2/T3
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
650
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 0°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
400
360
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
800
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
880
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 400 A, VGE = 15 V
IC = 400 A, VGE = 15 V
IC = 400 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 4,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,75
2,00
2,10
2,15
V
V
V
VGEth
4,9
5,8
6,5
V
VGE = -15 V ... +15 V
QG
3,20
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
1,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
18,5
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,57
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
td on
0,08
0,10
0,10
µs
µs
µs
tr
0,09
0,10
0,10
µs
µs
µs
td off
0,35
0,37
0,38
µs
µs
µs
tf
0,08
0,11
0,11
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGon = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGon = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGoff = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGoff = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 400 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 3300 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,5 Ω
Tvj = 150°C
Eon
6,30
9,40
11,0
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 400 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3350 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 1,5 Ω
Tvj = 150°C
Eoff
20,0
23,5
24,5
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
1800
1400
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,074
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
4
tP ≤ 10 µs, Tvj = 25°C
tP ≤ 10 µs, Tvj = 150°C
0,17 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
二极管,D1/D4/Diode,D1/D4
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
400
A
IFRM
800
A
I²t
15500
11500
特征值/CharacteristicValues
min.
typ.
max.
1,80
1,85
1,90
2,30
A²s
A²s
正向电压
Forwardvoltage
IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 400 A, - diF/dt = 3300 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
Tvj = 150°C
IRM
255
310
325
A
A
A
恢复电荷
Recoveredcharge
IF = 400 A, - diF/dt = 3300 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
Tvj = 150°C
Qr
29,0
56,0
65,0
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 400 A, - diF/dt = 3300 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
Tvj = 150°C
Erec
8,70
16,5
19,0
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,056
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
V
0,16 K/W
K/W
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
5
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 2,5
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
25,0
12,5
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,0
7,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
min.
typ.
max.
LsCE
38
nH
RCC'+EE'
0,75
mΩ
Tstg
-40
125
°C
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,0
-
6,0
Nm
重量
Weight
G
400
g
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
6
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
输出特性IGBT,T1/T4(典型)
outputcharacteristicIGBT,T1/T4(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,T1/T4(典型)
outputcharacteristicIGBT,T1/T4(typical)
IC=f(VCE)
Tvj=150°C
800
800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
640
640
560
560
480
480
400
400
320
320
240
240
160
160
80
80
0
0,0
0,5
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
720
IC [A]
IC [A]
720
1,0
1,5
2,0
VCE [V]
2,5
3,0
0
3,5
传输特性IGBT,T1/T4(典型)
transfercharacteristicIGBT,T1/T4(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,T1/T4(典型)
switchinglossesIGBT,T1/T4(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.5Ω,RGoff=1.5Ω,VCE=300V
800
80
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
720
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
70
640
60
560
50
E [mJ]
IC [A]
480
400
320
40
30
240
20
160
10
80
0
5
6
7
8
9
VGE [V]
10
11
12
0
13
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
7
0
100
200
300
400
IC [A]
500
600
700
800
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
开关损耗IGBT,T1/T4(典型)
switchinglossesIGBT,T1/T4(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=400A,VCE=300V
瞬态热阻抗IGBT,T1/T4
transientthermalimpedanceIGBT,T1/T4
ZthJC=f(t)
80
0,1
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
70
ZthJC : IGBT
60
ZthJC [K/W]
E [mJ]
50
40
0,01
30
20
i:
1
2
3
4
ri[K/W]: 0,00481 0,00743 0,05654 0,00346
τi[s]:
0,00048 0,00808 0,03994 4,14691
10
0
0
1
2
3
4
5
6
0,001
0,001
7 8 9 10 11 12 13 14 15
RG [Ω]
反偏安全工作区IGBT,T1/T4(RBSOA)
reversebiassafeoperatingareaIGBT,T1/T4(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.5Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,D2/D3(典型)
forwardcharacteristicofDiode,D2/D3(typical)
IF=f(VF)
900
800
IC, Modul
IC, Chip
800
720
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
640
700
560
600
IF [A]
IC [A]
480
500
400
400
320
300
240
200
160
100
0
80
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
8
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
开关损耗二极管,D2/D3(典型)
switchinglossesDiode,D2/D3(typical)
Erec=f(IF)
RGon=1.5Ω,VCE=300V
开关损耗二极管,D2/D3(典型)
switchinglossesDiode,D2/D3(typical)
Erec=f(RG)
IF=400A,VCE=300V
10
10
Erec, Tvj = 125°C
Erec, Tvj = 150°C
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
100
200
300
Erec, Tvj = 125°C
Erec, Tvj = 150°C
9
E [mJ]
E [mJ]
9
400
IF [A]
500
600
700
0
800
瞬态热阻抗二极管,D2/D3
transientthermalimpedanceDiode,D2/D3
ZthJC=f(t)
0
1
2
3
4
5
6
7 8 9 10 11 12 13 14 15
RG [Ω]
输出特性IGBT,T2/T3(典型)
outputcharacteristicIGBT,T2/T3(typical)
IC=f(VCE)
VGE=15V
1
800
ZthJC : Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
720
640
560
IC [A]
ZthJC [K/W]
480
0,1
400
320
240
160
i:
1
2
3
4
ri[K/W]: 0,02066 0,03561 0,14341 0,02234
τi[s]:
0,00031 0,0085 0,04141 0,9406
0,01
0,001
0,01
0,1
t [s]
1
80
0
10
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
9
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
4,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
输出特性IGBT,T2/T3(典型)
outputcharacteristicIGBT,T2/T3(typical)
IC=f(VCE)
Tvj=150°C
传输特性IGBT,T2/T3(典型)
transfercharacteristicIGBT,T2/T3(typical)
IC=f(VGE)
VCE=20V
800
800
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
700
600
700
600
500
IC [A]
IC [A]
500
400
300
200
200
100
100
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
0
5,0
开关损耗IGBT,T2/T3(典型)
switchinglossesIGBT,T2/T3(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.5Ω,RGoff=1.5Ω,VCE=300V
6
7
8
9
VGE [V]
10
11
12
13
100
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
90
80
80
60
60
E [mJ]
70
50
50
40
40
30
30
20
20
10
10
0
100
200
300
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
90
70
0
5
开关损耗IGBT,T2/T3(典型)
switchinglossesIGBT,T2/T3(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=400A,VCE=300V
100
E [mJ]
400
300
0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
400
IC [A]
500
600
700
0
800
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
10
0
1
2
3
4
5
6
7 8 9 10 11 12 13 14 15
RG [Ω]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
瞬态热阻抗IGBT,T2/T3
transientthermalimpedanceIGBT,T2/T3
ZthJC=f(t)
反偏安全工作区IGBT,T2/T3(RBSOA)
reversebiassafeoperatingareaIGBT,T2/T3(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.5Ω,Tvj=150°C
1
900
ZthJC : IGBT
IC, Modul
IC, Chip
800
700
600
IC [A]
ZthJC [K/W]
0,1
0,01
500
400
300
200
i:
1
2
3
4
ri[K/W]: 0,01921 0,12312 0,02338 0,00837
τi[s]:
0,00113 0,03104 0,17309 3,25128
0,001
0,001
0,01
0,1
t [s]
1
100
0
10
正向偏压特性二极管,D1/D4(典型)
forwardcharacteristicofDiode,D1/D4(typical)
IF=f(VF)
100
200
300
400
VCE [V]
500
600
700
开关损耗二极管,D1/D4(典型)
switchinglossesDiode,D1/D4(typical)
Erec=f(IF)
RGon=1.5Ω,VCE=300V
800
700
0
30
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
28
26
24
600
22
20
18
E [mJ]
IF [A]
500
400
16
14
12
300
10
8
200
6
4
100
2
0
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6
VF [V]
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
11
0
100
200
300
400
IF [A]
500
600
700
800
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
开关损耗二极管,D1/D4(典型)
switchinglossesDiode,D1/D4(typical)
Erec=f(RG)
IF=400A,VCE=300V
瞬态热阻抗二极管,D1/D4
transientthermalimpedanceDiode,D1/D4
ZthJC=f(t)
24
1
Erec, Tvj = 125°C
Erec, Tvj = 150°C
22
ZthJC : Diode
20
18
16
ZthJC [K/W]
E [mJ]
14
12
10
0,1
8
6
4
i:
1
2
3
4
ri[K/W]: 0,02046 0,10956 0,02205 0,00681
τi[s]:
0,00108 0,03036 0,16873 3,29829
2
0
0
1
2
3
4
5
6
0,01
0,001
7 8 9 10 11 12 13 14 15
RG [Ω]
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
120
140
160
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
12
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
13
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L400R12PT4_B26
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的,您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
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Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
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preparedby:MK
dateofpublication:2013-11-11
approvedby:MK
revision:2.0
14
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