Phototransistors PNA1601M (PN166) Silicon NPN Phototransistor 0.8 0.5 max. Gate the rest Unit : mm For optical control systems C0.5 0.8 2.5±0.2 1.7 Features High sensitivity R0.55 2.0 0.7 Wide spectral sensitivity, suited for detecting various kinds of LEDs 1.4±0.2 1.2±0.2 (0.4) 2.6±0.2 2-0.7 12.5±1.0 Ultraminiature, thin side-view type package 2-0.45 2 Absolute Maximum Ratings (Ta = 25˚C) 0.15 1 2.0 Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector current IC 20 mA Collector power dissipation PC 50 mW Operating ambient temperature Topr –25 to +65 ˚C Storage temperature Tstg –30 to +85 ˚C 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle *2 min typ VCE = 10V, H = 15µW/cm2 max Unit 0.2 µA µA 3 λP VCE = 10V 850 nm θ Measured from the optical axis to the half power point 35 deg. Rise time tr*2 VCC = 10V, ICE(L) = 5mA 4 µs Fall time tf*2 RL = 100Ω 4 Collector saturation voltage *1 SIR *1 Conditions VCE = 10V VCE(sat) ICE(L) = 10µA, H = 15µW/cm2 µs 0.5 V Measurements were made using infrared light (λ = 940 nm) as a light source. Switching time measuring circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;;;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNA1601M PC — Ta ICE(L) — VCE 40 30 20 10 20 40 Ambient temperature 60 80 1.2 500 lx 0.8 0.4 0 100 Ta (˚C ) 0 4 8 10 –2 10 –3 – 40 0 40 Ambient temperature 80 50 40 30 20 S (%) VCE = 10V Ta = 25˚C 80 60 40 40 80 0 600 120 30˚ 40˚ 50˚ 60˚ 700 800 900 1000 1100 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) tr — ICE(L) 20˚ VCE = 10V Ta = 25˚C VCE = 10V Ta = 25˚C 10 3 10 2 10 2 tr (µs) 60 0 Ambient temperature Rise time 70 10 3 L (lx) 20 10 3 Relative sensitivity S (%) 90 10 2 10 Illuminance Spectral sensitivity characteristics 10 –1 Ta (˚C ) 10˚ 1 100 1 10 –2 – 40 120 100 80 10 –2 VCE (V) VCE = 10V T = 2856K Directivity characteristics 0˚ 10 –1 10 –3 24 Relative sensitivity VCE = 10V ICE(L) (mA) Dark current 10 –1 20 VCE = 10V Ta = 25˚C T = 2856K 1 ICE(L) — Ta 10 Collector photo current ICEO (nA) 1 16 Collector to emitter voltage ICEO — Ta 10 12 tf (µs) 0 L = 1000 lx 1.6 RL = 1kΩ 10 500Ω 100Ω Fall time 0 – 20 Ta = 25˚C T = 2856K ICE(L) (mA) 50 ICE(L) — L 10 Collector photo current ICE(L) (mA) 2.0 Collector photo current Collector power dissipation PC (mW) 60 1 RL = 1kΩ 10 500Ω 100Ω 1 70˚ 80˚ 10 –1 10 –1 90˚ 10 –2 10 –2 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –2 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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