English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF450R12IE4
PrimePACK™2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管带有温度检测NTC
PrimePACK™2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
初步数据/PreliminaryData
VCES = 1200V
IC nom = 450A / ICRM = 900A
典型应用
• 电机传动
• 谐振逆变器应用
• 牵引变流器
• UPS系统
• 风力发电机
TypicalApplications
• MotorDrives
• ResonantInverterAppliccations
• TractionDrives
• UPSSystems
• WindTurbines
电气特性
• 提高工作结温Tvjop
• 高直流电压稳定性
• 高短路能力,自限制短路电流
• 低开关损耗
• 无与伦比的坚固性
• VCEsat带正温度系数
ElectricalFeatures
• ExtendedOperationTemperatureTvjop
• HighDCStability
• High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• LowSwitchingLosses
• UnbeatableRobustness
• VCEsatwithpositiveTemperatureCoefficient
机械特性
• 4kV交流1分钟绝缘
• 封装的CTI>400
• 高爬电距离和电气间隙
• 高功率循环和温度循环能力
• 高功率密度
• 低热阻衬底
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• SubstrateforLowThermalResistance
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF450R12IE4
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
IC nom 450
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
900
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
2,55
kW
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 16,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
typ.
max.
1,75
2,05
2,10
2,05
V
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
3,20
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,4
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
27,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
1,50
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,22
0,25
0,26
µs
µs
µs
tr
0,09
0,10
0,10
µs
µs
µs
td off
0,60
0,70
0,74
µs
µs
µs
tf
0,09
0,14
0,16
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 2,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 2,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 3700 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 2,5 Ω
Tvj = 150°C
Eon
42,0
59,0
64,0
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3100 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 3,1 Ω
Tvj = 150°C
Eoff
40,0
52,0
59,0
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
14,0
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
2
tP ≤ 10 µs, Tvj = 150°C
1800
A
59,0 K/kW
K/kW
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF450R12IE4
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
450
A
IFRM
900
A
I²t
29,0
28,0
特征值/CharacteristicValues
min.
typ.
max.
1,90
1,85
1,80
2,30
kA²s
kA²s
正向电压
Forwardvoltage
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 450 A, - diF/dt = 3800 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
240
305
335
A
A
A
恢复电荷
Recoveredcharge
IF = 450 A, - diF/dt = 3800 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
40,0
80,0
90,0
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 450 A, - diF/dt = 3800 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
19,0
33,0
36,0
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
25,5
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
V
105 K/kW
K/kW
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF450R12IE4
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 4,0
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
33,0
33,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
19,0
19,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
min.
typ.
RthCH
4,50
LsCE
18
nH
RCC'+EE'
0,30
mΩ
Tstg
-40
150
°C
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
1,8
-
2,1
Nm
M
8,0
-
10
Nm
重量
Weight
G
825
g
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
4
max.
K/kW
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF450R12IE4
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
900
900
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
700
700
600
600
500
500
400
400
300
300
200
200
100
100
0
0,0
0,5
1,0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
800
IC [A]
IC [A]
800
1,5
VCE [V]
2,0
2,5
0
3,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
800
900
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=2.5Ω,RGoff=3.1Ω,VCE=600V
900
240
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
800
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
210
700
180
600
500
E [mJ]
IC [A]
150
400
120
90
300
60
200
30
100
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
5
0
100
200
300
400 500
IC [A]
600
700
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF450R12IE4
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=450A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
180
100
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
160
ZthJC : IGBT
140
10
ZthJC [K/kW]
E [mJ]
120
100
80
60
1
40
i:
1
2
3
4
ri[K/kW]: 2,4
12
40
4,6
τi[s]:
0,0008 0,013 0,05 0,6
20
0
0,0
2,0
4,0
6,0
8,0
0,1
0,001
10,0
0,01
0,1
t [s]
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=3.1Ω,Tvj=150°C
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
1000
900
850
IC, Modul
IC, Chip
900
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
800
750
800
700
650
700
600
550
IF [A]
600
IC [A]
1
500
400
500
450
400
350
300
300
250
200
200
150
100
100
50
0
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
6
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF450R12IE4
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=2.5Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=450A,VCE=600V
50
50
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
30
30
E [mJ]
40
E [mJ]
40
20
20
10
10
0
0
100
200
300
400 500
IF [A]
600
700
800
0
900
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
0,0
1,0
2,0
3,0
4,0
5,0 6,0
RG [Ω]
7,0
8,0
9,0 10,0
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
1000
100000
ZthJC : Diode
Rtyp
100
R[Ω]
ZthJC [K/kW]
10000
10
1000
1
i:
1
2
3
4
ri[K/kW]: 8,9
24,9 69,4 1,8
τi[s]:
0,0008 0,013 0,05 0,6
0,1
0,001
0,01
0,1
t [s]
1
100
10
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
7
0
20
40
60
80
100
TC [°C]
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF450R12IE4
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF450R12IE4
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
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Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
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note,thatforanysuchapplicationsweurgentlyrecommend
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Changesofthisproductdatasheetarereserved.
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
9
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