English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF900R12IP4
PrimePACK™2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管带有温度检测NTC
PrimePACK™2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
初步数据/PreliminaryData
VCES = 1200V
IC nom = 900A / ICRM = 1800A
典型应用
• 辅助逆变器
• 大功率变流器
• 电机传动
• 牵引变流器
• UPS系统
• 风力发电机
TypicalApplications
• AuxiliaryInverters
• HighPowerConverters
• MotorDrives
• TractionDrives
• UPSSystems
• WindTurbines
电气特性
• 提高工作结温Tvjop
• 高直流电压稳定性
• 高短路能力,自限制短路电流
• 无与伦比的坚固性
• VCEsat带正温度系数
• 低VCEsat
ElectricalFeatures
• ExtendedOperationTemperatureTvjop
• HighDCStability
• High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• UnbeatableRobustness
• VCEsatwithpositiveTemperatureCoefficient
• LowVCEsat
机械特性
• 4kV交流1分钟绝缘
• 封装的CTI>400
• 高爬电距离和电气间隙
• 高功率循环和温度循环能力
• 高功率密度
• 低热阻衬底
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• SubstrateforLowThermalResistance
BarcodeCode128
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ModuleLabelCode
DMX-Code
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF900R12IP4
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
IC nom 900
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
1800
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
5,10
kW
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 900 A, VGE = 15 V
IC = 900 A, VGE = 15 V
IC = 900 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 33,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
typ.
max.
1,70
2,00
2,10
2,05
V
V
V
VGEth
5,0
5,8
6,5
V
VGE = -15 V ... +15 V
QG
6,40
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
1,2
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
54,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
2,80
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,20
0,22
0,22
µs
µs
µs
tr
0,14
0,15
0,15
µs
µs
µs
td off
0,70
0,80
0,85
µs
µs
µs
tf
0,20
0,40
0,45
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 900 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 900 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 900 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 900 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 900 A, VCE = 600 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,6 Ω
Tvj = 150°C
Eon
71,0
100
105
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 900 A, VCE = 600 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 1,6 Ω
Tvj = 150°C
Eoff
125
160
175
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
14,0
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
2
tP ≤ 10 µs, Tvj = 150°C
3600
A
29,5 K/kW
K/kW
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF900R12IP4
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
900
A
IFRM
1800
A
I²t
91,0
88,0
特征值/CharacteristicValues
min.
typ.
max.
1,90
1,85
1,80
2,30
kA²s
kA²s
正向电压
Forwardvoltage
IF = 900 A, VGE = 0 V
IF = 900 A, VGE = 0 V
IF = 900 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
500
650
700
A
A
A
恢复电荷
Recoveredcharge
IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
90,0
150
195
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
38,0
75,0
89,0
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
25,5
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
V
53,5 K/kW
K/kW
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF900R12IP4
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 4,0
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
33,0
33,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
19,0
19,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
min.
typ.
RthCH
4,50
LsCE
18
nH
RCC'+EE'
0,30
mΩ
Tstg
-40
150
°C
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
1,8
-
2,1
Nm
M
8,0
-
10
Nm
重量
Weight
G
825
g
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
4
max.
K/kW
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF900R12IP4
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
1800
1800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1600
1200
1200
1000
1000
IC [A]
1400
IC [A]
1400
800
800
600
600
400
400
200
200
0
0,0
0,5
1,0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
1600
1,5
VCE [V]
2,0
2,5
0
3,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.6Ω,RGoff=1.6Ω,VCE=600V
1800
500
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1600
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
450
400
1400
350
1200
300
E [mJ]
IC [A]
1000
800
250
200
600
150
400
100
200
0
50
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
5
0
200
400
600
800 1000 1200 1400 1600 1800
IC [A]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF900R12IP4
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=900A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
800
100
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
750
700
650
ZthJC : IGBT
600
550
10
ZthJC [K/kW]
E [mJ]
500
450
400
350
300
1
250
200
150
i:
1
2
3
4
ri[K/kW]: 1,2
6
20
2,3
τi[s]:
0,0008 0,013 0,05 0,6
100
50
0
0,0
2,0
4,0
6,0
8,0 10,0
RG [Ω]
12,0
14,0
0,1
0,001
16,0
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.6Ω,Tvj=150°C
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
2000
1800
IC, Modul
IC, Chip
1800
1400
1260
1200
1080
IF [A]
IC [A]
1440
1000
900
800
720
600
540
400
360
200
180
0
200
400
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1620
1600
0
0,01
600
800
VCE [V]
1000
1200
0
1400
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
6
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF900R12IP4
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1.6Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=900A,VCE=600V
120
120
Erec, Tvj = 125°C
Erec, Tvj = 150°C
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
200
400
600
Erec, Tvj = 125°C
Erec, Tvj = 150°C
110
E [mJ]
E [mJ]
110
0
800 1000 1200 1400 1600 1800
IF [A]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
0,0
2,0
4,0
6,0
8,0 10,0
RG [Ω]
12,0
14,0
16,0
140
160
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100
100000
ZthJC : Diode
Rtyp
10000
R[Ω]
ZthJC [K/kW]
10
1
1000
i:
1
2
3
4
ri[K/kW]: 4,5
12,7 35,4 0,9
τi[s]:
0,0008 0,013 0,05 0,6
0,1
0,001
0,01
0,1
t [s]
1
100
10
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
7
0
20
40
60
80
100
TC [°C]
120
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF900R12IP4
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF900R12IP4
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的,您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
产品规格书中所描述的产品特性是被保证的,任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外,产品和产品的特性没有任何的保证
请注意安装及应用指南中的信息。
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话,请联系我们负责你的销售部门(详情查询
www.infineon.com)。对那些特别感兴趣的问题我们将提供相应的应用手册
由于技术需要,我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门
如果您想将我们的产品用于航天,健康,危及生命或者生命维持等应用,请申明。
请注意,对这类应用我们强烈建议
-执行联合的风险和质量评估
-得到质量协议的结论
-建立联合的测试和出厂产品检查,我们可以根据测试的实际情况供货
如果有必要,请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:AC
dateofpublication:2013-11-05
approvedby:MS
revision:2.4
9
Similar pages