Datasheet

AON6200
30V N-Channel MOSFET
General Description
Product Summary
The AON6200 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Conduction and
switching losses are minimized due to an extremely low
combination of RDS(ON) and Crss.
VDS
30V
24A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 7.8mΩ
RDS(ON) (at VGS = 4.5V)
< 11mΩ
100% UIS Tested
100% Rg Tested
D
Top View
1
8
2
7
3
6
4
5
G
S
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
130
13
IDSM
TA=70°C
±20
18
IDM
TA=25°C
Units
V
24
ID
TC=100°C
Maximum
30
A
10
Avalanche Current C
IAR
28
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
39
mJ
Power Dissipation B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 2: Feb 2011
1.95
Steady-State
Steady-State
RθJA
RθJC
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W
1.25
TJ, TSTG
Symbol
t ≤ 10s
W
14
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
35
PD
-55 to 150
Typ
25
55
2.6
°C
Max
30
64
3.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6200
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
30
1
TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
Units
V
VDS=30V, VGS=0V
VGS(th)
100
nA
1.85
2.4
V
6.5
7.8
9
11
VGS=4.5V, ID=15A
9
11
VGS=10V, ID=20A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
60
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
mΩ
mΩ
S
1
V
40
A
870
1090
1300
pF
VGS=0V, VDS=15V, f=1MHz
340
490
640
pF
22
38
53
pF
VGS=0V, VDS=0V, f=1MHz
0.4
0.9
1.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
16
20
nC
Qg(4.5V) Total Gate Charge
5
7
9
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=20A
2
2.5
3
nC
1.5
2.5
3.5
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
10
13
16
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
20
25
30
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
5
ns
2
ns
16
ns
2
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Feb 2011
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Page 2 of 6
AON6200
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
50
10V
4V
4.5V
60
30
3.5V
ID(A)
ID (A)
VDS=5V
40
40
20
125°C
20
10
VGS=3V
0
0
0
1
2
3
4
1
5
1.5
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
15
Normalized On-Resistance
1.6
12
VGS=4.5V
RDS(ON) (mΩ
Ω)
25°C
9
6
VGS=10V
3
VGS=10V
ID=20A
1.4
17
5
2
10
1.2
VGS=4.5V
ID=15A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
30
1.0E+02
ID=20A
1.0E+01
25
40
1.0E+00
15
IS (A)
RDS(ON) (mΩ
Ω)
20
125°C
10
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
1.0E-04
25°C
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Feb 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6200
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1400
Capacitance (pF)
VGS (Volts)
1600
VDS=15V
ID=20A
8
6
4
Ciss
1200
1000
800
600
Coss
400
2
Crss
200
0
0
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
18
0
10µs
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
160
10µs
RDS(ON)
Power (W)
100.0
ID (Amps)
30
200
1000.0
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.5°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Feb 2011
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Page 4 of 6
AON6200
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
50
TA=25°C
TA=100°C
TA=150°C
40
30
20
10
TA=125°C
0
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
30
TA=25°C
25
1000
20
Power (W)
Current rating ID(A)
150
15
17
5
2
10
100
10
10
5
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
10 0
1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
150
40
RθJA=64°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2: Feb 2011
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Page 5 of 6
AON6200
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 2: Feb 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6