Datasheet

AON6224
100V N-Channel MOSFET
General Description
Product Summary
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
VDS
Applications
ID (at VGS=10V)
100V
34A
RDS(ON) (at VGS=10V)
< 12mΩ
RDS(ON) (at VGS=4.5V)
< 15.5mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
PIN1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6224
DFN 5x6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: July 2015
IAS
20
A
EAS
20
mJ
120
V
56.5
6.2
Steady-State
Steady-State
W
4.0
TJ, TSTG
Symbol
t ≤ 10s
W
22.5
PDSM
TA=70°C
A
13
PD
TA=25°C
Power Dissipation A
A
16
VSPIKE
TC=100°C
V
104
IDSM
TA=70°C
±20
31
IDM
TA=25°C
Continuous Drain
Current
Units
V
34
ID
TC=100°C
Maximum
100
RθJA
RθJC
-55 to 150
Typ
15
40
1.8
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Max
20
50
2.2
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
1.4
±100
nA
1.9
2.4
V
10
12
17.5
21
12.5
15.5
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=20A
60
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.71
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
VGS=4.5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=20A
Output Capacitance
Units
V
VDS=100V, VGS=0V
IDSS
Coss
Max
VGS=0V, VDS=50V, f=1MHz
mΩ
mΩ
S
1
V
34
A
2420
pF
170
pF
11
pF
0.55
0.9
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
33
50
nC
Qg(4.5V)
Total Gate Charge
15
25
nC
Qgs
Gate Source Charge
Qgd
f=1MHz
VGS=10V, VDS=50V, ID=20A
0.2
7
nC
Gate Drain Charge
4
nC
tD(on)
Turn-On DelayTime
8
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, di/dt=500A/µs
Qrr
µ
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
128
Body Diode Reverse Recovery Time
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
3
ns
25
ns
4
ns
27
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2015
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
4.5V
10V
VDS=5V
4V
80
80
6V
60
ID (A)
ID (A)
60
3.5V
40
125°C
40
20
25°C
20
3V
0
0
0
1
2
3
4
1
5
2
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
20
Normalized On-Resistance
2.2
15
RDS(ON) (mΩ
Ω)
3
VGS=4.5V
10
VGS=10V
5
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
30
1.0E+02
ID=20A
1.0E+01
1.0E+00
20
125°C
125°C
IS (A)
RDS(ON) (mΩ
Ω)
25
15
1.0E-01
25°C
1.0E-02
10
1.0E-03
25°C
5
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: July 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=50V
ID=20A
Capacitance (pF)
VGS (Volts)
Ciss
2500
8
6
4
2
2000
1500
1000
500
Coss
Crss
0
0
0
5
10
15
20
25
30
35
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
60
80
100
VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
10µs
100.0
RDS(ON)
limited
10.0
100µs
1ms
1.0
TJ(Max)=150°C
TC=25°C
400
10µs
Power (W)
ID (Amps)
20
300
200
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
100
0
0.0001 0.001
0.1
1
10
100
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
1000
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.2°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: July 2015
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
40
50
Power Dissipation (W)
30
Current rating ID (A)
40
30
20
10
20
10
0
0
0
25
50
75
100
125
150
0
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PDM
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: July 2015
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Page 5 of 6
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
t d(off)
t on
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS)
(UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: July 2015
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6