AON6232A 40V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications 40V 85A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 2.9mΩ RDS(ON) (at VGS=4.5V) < 4.2mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6232A DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current TA=25°C Avalanche energy VDS Spike L=0.1mH C 10µs Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: April 2015 60 A EAS 180 mJ 48 V 113.5 Steady-State Steady-State W 45.5 6.2 RθJA RθJC W 4.0 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 35 PD TC=100°C A 28 VSPIKE TC=25°C V 260 IDSM Avalanche Current C ±20 85 IDM TA=70°C Units V 85 ID TC=100°C C Maximum 40 -55 to 150 Typ 15 40 0.9 www.aosmd.com °C Max 20 50 1.1 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V VGS=0V, VDS=20V, f=1MHz f=1MHz µA 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ nA 2.5 V 2.4 2.9 3.75 4.55 3.35 4.2 mΩ 1 V 85 A 100 0.68 mΩ S 3250 pF 835 pF 43 pF 0.85 1.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 42 60 nC Qg(4.5V) Total Gate Charge 19 28 Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=20V, ID=20A 0.4 ±100 1.9 nC 8 nC Gate Drain Charge 5 nC Turn-On DelayTime 10 ns VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω 3.5 ns 32 ns 4 ns IF=20A, dI/dt=500A/µs 21 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 62 ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 100 120 4V VDS=5V 100 3.5V 4.5V 80 ID(A) ID (A) 80 60 40 60 125°C 40 20 20 VGS=3V 25°C 0 0 0 1 2 3 4 1 5 2 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 6 1.8 4 Normalized On-Resistance RDS(ON) (mΩ) 3 VGS=4.5V 2 VGS=10V 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 8 1.0E+01 ID=20A 1.0E+00 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 6 4 125°C 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: April 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=20V ID=20A 4000 Ciss 3500 Capacitance (pF) VGS (Volts) 8 6 4 3000 2500 2000 1500 Coss 1000 2 500 0 Crss 0 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 40 10µs RDS(ON) limited DC TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 400 10µs 100µs 1ms 10ms 10.0 1.0 TJ(Max)=150°C TC=25°C Power (W) ID (Amps) 30 500 100.0 300 200 100 1 VDS (Volts) 10 100 0 0.0001 VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10 10 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.1°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: April 2015 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 Power Dissipation (W) 100 80 Current rating ID(A) 80 60 40 20 60 40 20 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: April 2015 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: April 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6