Datasheet

AON6260
60V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6260 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
60V
85A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 2.4mΩ
RDS(ON) (at VGS=4.5V)
< 3.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
340
41
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Units
V
85
ID
TC=100°C
Maximum
60
A
33
Avalanche Current C
IAS
65
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
211
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev.1.0: July 2013
7.3
Steady-State
Steady-State
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
W
41.5
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
104
PD
-55 to 150
Typ
14
40
1
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°C
Max
17
55
1.2
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6260
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
VGS=4.5V, ID=20A
2.8
3.5
mΩ
105
0.7
1
V
85
A
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
f=1MHz
Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=30V, ID=20A
0.3
mΩ
S
5578
VGS=0V, VDS=30V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qg(4.5V)
V
2.4
Forward Transconductance
Gate resistance
nA
2.5
3.9
VSD
Rg
±100
1.95
gFS
Reverse Transfer Capacitance
2.0
3.15
TJ=125°C
VDS=5V, ID=20A
Crss
µA
5
1.5
Units
V
1
VGS=10V, ID=20A
Output Capacitance
Max
60
VDS=60V, VGS=0V
IDSS
Coss
Typ
pF
1390
pF
75
pF
0.75
1.2
Ω
81
115
nC
37
52
nC
17
nC
Gate Drain Charge
12
nC
Turn-On DelayTime
13.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
8
ns
50
ns
tf
Turn-Off Fall Time
11.5
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
30
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
130
ns
nC
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2013
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Page 2 of 6
AON6260
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
3.5V
4.5V
80
80
10V
60
ID(A)
ID (A)
60
40
40
VGS=3.0V
20
125°C
20
25°C
0
0
0
1
2
3
4
1
5
6
3
4
5
2
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
VGS=4.5V
2
VGS=10V
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
VGS=4.5V
1.4
1.2
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
6
1.0E+02
ID=20A
1.0E+01
40
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
4
2
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: July 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6260
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
7000
VDS=30V
ID=20A
Ciss
6000
Capacitance (pF)
VGS (Volts)
8
6
4
5000
4000
3000
Coss
2000
2
Crss
1000
0
0
0
10
20
30
40
50
60
70
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
90
0
RDS(ON)
limited
100µs
1ms
10ms
10.0
1.0
DC
TJ(Max)=150°C
TC=25°C
0.1
17
5
2
10
300
200
100
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
VGS > or equal to 4.5V
10
0
18
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
60
TJ(Max)=150°C
TC=25°C
400
10µs
10µs
Power (W)
ID (Amps)
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
100.0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=1.2°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: July 2013
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Page 4 of 6
AON6260
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=100°C
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
100
TA=150°C
TA=125°C
10
100
60
40
20
1
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
100
TA=25°C
80
1000
Power (W)
Current rating ID(A)
80
60
40
17
5
2
10
100
10
20
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
100
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
1E-05
150
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: July 2013
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Page 5 of 6
AON6260
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: July 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6