AOS Semiconductor Product Reliability Report AON6260, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AON6260. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON6260 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: The AON6260 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Details refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond Mold Material Moisture Level AON6260 Standard sub-micron 60V N-Channel MOSFET DFN 5x6 Bare Cu Solder Paste Cu Clip Epoxy resin with silica filler Up to Level 1 2 III. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample Size Number of Failures Reference Standard MSL Precondition 168hr 85°C / 85%RH + 3 cycle reflow@260°C (MSL 1) - 3465 pcs 0 JESD22-A113 HTGB Temp = 150°C , Vgs=100% of Vgsmax 168 / 500 / 1000 hours 924 pcs HTRB Temp = 150°C , Vds=80% of Vdsmax 168 / 500 / 1000 hours 924 pcs HAST 130°C , 85%RH, 33.3 psi, Vds = 80% of Vdsmax up to 42V 96 hours 924 pcs 0 JESD22-A110 Autoclave 121°C , 29.7psi, RH=100% 96 hours 924 pcs 0 JESD22-A102 Temperature Cycle -65°C to 150°C , air to air, 250 / 500 cycles 924 pcs 0 JESD22-A104 HTSL Temp = 150°C 1000 hrs 693 pcs 0 JESD22-A103 0 JESD22-A108 0 JESD22-A108 Note: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 3.39 MTTF = 33689 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 3.39 9 MTTF = 10 / FIT = 333689 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3