PIN Photodiodes PNZ334 (PN334) ø4.8±0.2 ø4.4±0.2 For optical fiber communication systems C0.2 5.0±0.2 3.0±0.3 Features 0.5 Plastic type package (ø 5) 0.8 High quantum efficiency High-speed response Unit : mm 0.6 26.0±0.1 1.5 1.5 High coupling capability suitable for plastic fiber Not soldered 2.0 max. PIN Photodiode 2-0.8 max. (1.5) 2- 0.6±0.1 ø5.4±0.2 2.54 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings 2 1 1: Anode 2: Cathode Unit Reverse voltage (DC) VR 30 V Power dissipation PD 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Dimensions of detection area Unit : mm 1.0 0.86 Active region A1 ø0.1 Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ID Conditions Photo current IL VR = 10V, L = 1000 Peak sensitivity wavelength λP VR = 10V Response time tr, tf *2 min VR = 10V lx*1 5 typ max Unit 0.1 10 nA 7 µA 850 nm VR = 10V, RL = 50Ω 2 ns Capacitance between pins Ct VR = 0V, f = 1MHz 6 pF Acceptance half angle θ Measured from the optical axis to the half power point 70 deg. *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VR = 10V (Input pulse) λP = 900nm Sig.OUT (Output pulse) RL ;;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 PNZ334 PIN Photodiodes IL — V R IL — L VR = 10V Ta = 25˚C 10 3 Ct — VR 10 3 16 10 1 Capacitance between pins Ct (pF) IL (µA) 10 2 Photo current IL (µA) 14 Photo current Ta = 25˚C Ta = 25˚C 12 10 L = 1000 lx 8 6 L = 500 lx 4 10 –1 10 2 10 1 2 10 –2 1 10 2 10 10 3 Illuminance 0 10 4 0 10 20 Reverse voltage L (lx) 10 –1 10 –1 50 VR (V) VR = 10V L = 1000 lx VR = 10V S (%) 1 Relative sensitivity ID (nA) Dark current 8 10 –1 10 –2 4 0 – 40 – 20 0 20 40 60 Ambient temperature 80 Ta (˚C ) 0 20 40 60 Ambient temperature tr , tf — RL VR = 10V Ta = 25˚C 80 60 40 80 0 200 100 400 600 800 1000 Coupling loss characteristics 0 0 1 Coupling loss LX , LY (dB) 10 2 3 4 10 –1 10 –2 10 –1 1 External load resistance 2 Z = 0mm 1 Coupling loss LZ (dB) Rise time, Fall time tr , tf (ns) X,Y = 0mm 10 2 10 RL (kΩ) 5 1200 Wavelength λ (nm) Ta (˚C ) Coupling loss characteristics 10 3 VR (V) 20 10 –3 – 40 – 20 100 10 2 10 Spectral sensitivity characteristics 100 10 12 1 Reverse voltage 10 2 16 IL (µA) 40 ID — Ta IL — Ta 20 Photo current 30 Fiber Y Z ø1mm X 0 0.4 0.8 1.2 Distance Z (mm) 1.6 1 Z = 0.3mm 2 3 4 5 – 0.8 Fiber Y X – 0.4 0 Z ø1mm 0.4 Distance X, Y (mm) 0.8 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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