AON6268 60V N-Channel AlphaSGT TM General Description Product Summary • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge ID (at VGS=10V) VDS Applications 60V 44A RDS(ON) (at VGS=10V) < 4.7mΩ RDS(ON) (at VGS=4.5V) < 6.3mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification for AC-DC Quick Charger D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6268 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.3mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: February 2016 24 30 A EAS 135 mJ VSPIKE 72 V 56 Steady-State Steady-State W 22 5 RθJA RθJC W 3.2 TJ, TSTG Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range A 20 PD TA=25°C V 176 IDSM TA=70°C ±20 44 IDM TA=25°C Units V 44 ID TC=100°C Maximum 60 -55 to 150 Typ 20 45 1.8 www.aosmd.com Max 25 55 2.2 °C Units °C/W °C/W °C/W Page 1 of 6 AON6268 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.3 ±100 nA 1.8 2.3 V 3.8 4.7 5.8 7.2 6.3 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 4.9 gFS Forward Transconductance VDS=5V, ID=20A 91 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz mΩ S 1 V 44 A 2520 pF 670 pF 65 pF 1.2 2 Ω 44 65 nC Qg(4.5V) Total Gate Charge 21 30 Gate Source Charge Qgd tD(on) VGS=10V, VDS=30V, ID=20A 0.5 mΩ SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs f=1MHz µA 5 VGS=10V, ID=20A Coss Units 60 VDS=60V, VGS=0V IDSS Max nC 6.5 nC Gate Drain Charge 8.5 nC Turn-On DelayTime 7.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 6.5 ns 38 ns 8 ns IF=20A, di/dt=500A/µs 22 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 80 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2016 www.aosmd.com Page 2 of 6 AON6268 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V VDS=5V 3.5V 80 80 10V 60 ID (A) ID (A) 60 3V 40 125°C 40 25°C 20 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 7 Normalized On-Resistance 2 6 RDS(ON) (mΩ) 1 VGS=4.5V 5 4 VGS=10V 3 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 2 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 16 1.0E+02 ID=20A 1.0E+01 1.0E+00 8 IS (A) RDS(ON) (mΩ) 12 125°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 4 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: February 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6268 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3500 VDS=30V ID=20A 3000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2500 2000 1500 Coss 1000 2 500 0 Crss 0 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 500 10µs RDS(ON) limited 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 400 Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 5 300 200 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.2°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: February 2016 www.aosmd.com Page 4 of 6 AON6268 60 60 45 45 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 30 15 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: February 2016 www.aosmd.com Page 5 of 6 AON6268 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: February 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6