Datasheet

AON6280
80V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6280 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
80V
85A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.1mΩ
RDS(ON) (at VGS=6V)
< 5.0mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
C
Avalanche energy L=0.1mH
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 1 : Mar. 2012
IAS
50
A
EAS
125
mJ
83
Steady-State
Steady-State
W
33
7.3
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
A
13
PDSM
Junction and Storage Temperature Range
A
17
PD
TA=25°C
V
230
IDSM
TA=70°C
±20
65
IDM
TA=25°C
Continuous Drain
Current
Units
V
85
ID
TC=100°C
Maximum
80
-55 to 150
Typ
14
40
1
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°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6280
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
2
ID(ON)
On state drain current
VGS=10V, VDS=5V
230
±100
nA
2.6
3.2
V
3.4
4.1
5.8
7
VGS=6V, ID=20A
4
5
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
76
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz
Gate Source Charge
VGS=10V, VDS=40V, ID=20A
0.3
mΩ
mΩ
S
1
V
85
A
3930
pF
592
pF
66
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
5
Gate Threshold Voltage
Units
V
1
VGS(th)
Coss
Max
80
VDS=80V, VGS=0V
IGSS
RDS(ON)
Typ
pF
0.7
1.1
58
82
Ω
nC
15
nC
Qgd
Gate Drain Charge
14
nC
tD(on)
Turn-On DelayTime
13
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
6
ns
32
ns
tf
Turn-Off Fall Time
9
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
36
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
153
ns
nC
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Mar. 2012
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Page 2 of 6
AON6280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
5V
6V
80
VDS=5V
4.5V
10V
80
60
ID(A)
ID (A)
60
40
40
4V
125°C
20
20
25°C
VGS=3.5V
0
0
0
1
2
3
4
0
5
10
2
3
4
5
6
Normalized On-Resistance
2
8
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
VGS=6V
4
VGS=10V
2
0
1.8
VGS=10V
ID=20A
1.6
17
5
2
VGS=6V
ID=20A 10
1.4
1.2
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
12
1.0E+02
ID=20A
1.0E+01
10
40
1.0E+00
125°C
125°C
IS (A)
RDS(ON) (mΩ
Ω)
8
6
1.0E-01
1.0E-02
25°C
4
1.0E-03
25°C
2
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 1 : Mar. 2012
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Page 3 of 6
AON6280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=40V
ID=20A
Ciss
4000
Capacitance (pF)
VGS (Volts)
8
6
4
2
3000
2000
Coss
1000
0
Crss
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
0
20
30
40
50
60
70
VDS (Volts)
Figure 8: Capacitance Characteristics
80
500
1000.0
100.0
10
400
10µs
RDS(ON)
TJ(Max)=150°C
TC=25°C
10.0
100µs
1.0
1ms
10ms
DC
Power (W)
ID (Amps)
10µs
TJ(Max)=150°C
TC=25°C
0.1
17
5
2
10
300
200
100
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
40
RθJC=1.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1 : Mar. 2012
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Page 4 of 6
AON6280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
60
40
20
TA=125°C
10
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
150
TA=25°C
80
Power (W)
1000
60
40
17
5
2
10
100
10
20
0
1
0
10
Zθ JA Normalized Transient
Thermal Resistance
25
10000
100
Current rating ID(A)
80
1
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
150
0.00001
0.001
0.1
10 0
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1 : Mar. 2012
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Page 5 of 6
AON6280
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
Rev 1 : Mar. 2012
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Page 6 of 6