AON6360 30V N-Channel AlphaMOS General Description Product Summary • Trench Power AlphaMOS (enhanced αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications VDS ID (at VGS=10V) 30V 85A RDS(ON) (at VGS=10V) < 3mΩ RDS(ON) (at VGS=4.5V) < 5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity AON6360 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C Avalanche energy L=0.05mH VDS Spike Power Dissipation B C 10µs TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev. 1.0: September 2014 IAS 40 A EAS 40 mJ VSPIKE 36 V 42 Steady-State Steady-State W 17 6.2 RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s A 29 PDSM TA=70°C A 36 PD TC=100°C V 180 IDSM TA=70°C ±20 59 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C C Maximum 30 -55 to 150 Typ 15 40 2.4 www.aosmd.com °C Max 20 50 3 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ 0.8 ±100 nA 1.8 2.2 V 2.5 3 3.7 4.5 4 5 mΩ 1 V 50 A 100 0.7 mΩ S 1590 pF 660 pF 80 pF 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 24 Qg(4.5V) Total Gate Charge 11.5 nC 4 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs nC 5.8 nC 4 nC 5.8 nC 8 ns 4 ns 24 ns 5 ns 14.5 ns nC 31 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev. 1.0: September 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V VDS=5V 4V 80 80 3.5V 125°C 60 ID(A) ID (A) 60 40 40 20 25°C 20 VGS=3V 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 6 1.8 Normalized On-Resistance 5 VGS=4.5V RDS(ON) (mΩ) 2 4 3 2 VGS=10V 1 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 50 1.00E+02 ID=20A 1.00E+01 8 125°C 6 IS (A) RDS(ON) (mΩ) 1.00E+00 125°C 1.00E-01 25°C 1.00E-02 4 1.00E-03 2 25°C 1.00E-04 0 1.00E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev. 1.0: September 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=15V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1500 1000 2 Coss 500 Crss 0 0 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 500 10µs RDS(ON) limited 400 100µs 1ms 10ms 10.0 DC 1.0 0.1 300 200 100 TJ(Max)=150°C TC=25°C 0.0 0.01 TJ(Max)=150°C TC=25°C 10µs Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 5 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 1E-05 0.0001 0.001 100 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3°C/W 1 Single Pulse 0.1 PD Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev. 1.0: September 2014 www.aosmd.com Page 4 of 6 50 100 40 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 60 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev. 1.0: September 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev. 1.0: September 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6