Datasheet

AON6406
30V N-Channel MOSFET
General Description
Product Summary
VDS
• Latest Trench Power LV technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
170A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 2.3mΩ
RDS(ON) (at VGS=4.5V)
< 3.5mΩ
ESD protected
100% UIS Tested
100% Rg Tested
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
Pin 1
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
CurrentG
VGS
TC=25°C
TA=25°C
Units
V
±20
V
A
110
IDM
280
25
IDSM
TA=70°C
Maximum
30
170
ID
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
G
A
19
Avalanche Current C
IAS
60
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
180
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1.0: October 2014
2.3
Steady-State
Steady-State
RθJA
RθJC
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W
1.4
TJ, TSTG
Symbol
t ≤ 10s
W
45
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
110
PD
TC=100°C
-55 to 150
Typ
14
40
0.85
°C
Max
17
55
1.1
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36
VDS=30V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±16V
Gate Threshold Voltage
VDS=VGS ID=250µA
TJ=55°C
5
1.3
10
uA
2.4
V
1.9
2.3
2.8
3.4
3.5
mΩ
1
V
170
A
5200
pF
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
2.4
gFS
Forward Transconductance
VDS=5V, ID=20A
130
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.67
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
4300
VGS=0V, VDS=15V, f=1MHz
µA
1.8
RDS(ON)
TJ=125°C
Units
V
1
VGS=10V, ID=20A
Coss
Max
mΩ
S
720
pF
420
pF
2
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
70
100
nC
Qg(4.5V) Total Gate Charge
33
nC
10
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
1
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
15
nC
tD(on)
Turn-On DelayTime
10
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=500A/µs
Qrr
µ
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
15
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
6.5
ns
75
ns
18
ns
30
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1.0: October 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
VDS=5V
3.5V
100
4.5V
80
80
3V
10V
ID(A)
ID (A)
60
60
40
125°C
40
25°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
1
5
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
Normalized On-Resistance
2.2
3
RDS(ON) (mΩ)
1.5
VGS=4.5V
2
1
VGS=10V
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
6
1.0E+02
ID=20A
1.0E+01
5
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
4
3
25°C
2
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1.0: October 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=15V
ID=20A
5000
Capacitance (pF)
VGS (Volts)
8
6
4
2
4000
3000
2000
Coss
1000
0
Crss
0
0
10
20
30
40
50
60
70
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
0
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
900
10µs
RDS(ON)
limited
800
10µs
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
700
Power (W)
100.0
5
1000
1000.0
ID (Amps)
Ciss
600
500
400
300
200
100
0.0
0.01
0.1
1
10
100
0
0.0001
VDS (Volts)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.1°C/W
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
T
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1.0: October 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
100
TA=150°C
TA=125°C
10
120
100
80
60
40
20
1
0
1
10
100
1000
0
25
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
75
100
150
10000
200
180
TA=25°C
160
1000
140
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
120
100
80
60
100
10
40
20
0
0
25
50
75
100
125
150
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1.0: October 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev 1.0: October 2014
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6