Datasheet

AON6424
30V N-Channel MOSFET
General Description
Product Summary
The AON6424 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
ID (at VGS=10V)
VDS
30V
41A
RDS(ON) (at VGS=10V)
< 8.5mΩ
RDS(ON) (at VGS = 4.5V)
< 10mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
90
11
IDSM
TA=70°C
±12
26
IDM
TA=25°C
Units
V
41
ID
TC=100°C
Maximum
30
A
9
Avalanche Current C
IAS, IAR
36
A
Avalanche energy L=0.05mH C
TC=25°C
EAS, EAR
32
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev1 : Oct 2010
2
Steady-State
Steady-State
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
10
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
25
PD
-55 to 150
Typ
21
50
3.5
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°C
Max
25
60
5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
0.8
ID(ON)
On state drain current
VGS=10V, VDS=5V
90
100
nA
1.2
1.7
V
6.8
8.5
11
13.5
VGS=4.5V, ID=20A
7.7
10
mΩ
1
V
30
A
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
100
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Units
V
1
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
1260
1580
1900
pF
VGS=0V, VDS=15V, f=1MHz
110
160
210
pF
60
100
140
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.4
2.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
20
26
32
nC
Qg(4.5V) Total Gate Charge
9
12
15
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=20A
2
3
4
nC
1.5
3
4.5
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
5
ns
2
ns
29
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
8
10
3
12
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
12
16
20
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1 : Oct 2010
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Page 2 of 6
AON6424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
30
10V
4V
6V
60
VDS=5V
25
2.5V
ID(A)
ID (A)
20
40
15
10
VGS=2V
125°C
20
25°C
5
0
0
0
1
2
3
4
0
5
12
1
1.5
2
2.5
3
Normalized On-Resistance
2.2
10
VGS=4.5V
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
8
6
VGS=10V
4
2
2
VGS=10V
ID=20A
1.8
17
5
2
VGS=4.5V
10
ID=20A
1.6
1.4
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
30
1.0E+02
ID=20A
1.0E+01
25
40
1.0E+00
15
IS (A)
RDS(ON) (mΩ
Ω)
20
125°C
10
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev1 : Oct 2010
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2400
VDS=12.5V
ID=20A
Ciss
1800
Capacitance (pF)
VGS (Volts)
8
6
4
1200
600
Crss
2
Coss
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
10µs
100.0
160
10µs
TJ(Max)=150°C
TC=25°C
10.0
100µs
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
RDS(ON)
ID (Amps)
30
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev1 : Oct 2010
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Page 4 of 6
AON6424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
TA=25°C
TA=100°C
100
TA=150°C
10
TA=125°C
25
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
20
15
10
5
1
0
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
50
10000
40
1000
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
150
TA=25°C
Power (W)
Current rating ID(A)
1
30
20
17
5
2
10
100
10
10
1
0
0.00001
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev1 : Oct 2010
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Page 5 of 6
AON6424
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev1 : Oct 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6