Datasheet

AON6426
30V N-Channel MOSFET
General Description
Product Summary
The AON6426 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
VDS (V) = 30V
ID = 65A
(VGS = 10V)
RDS(ON) < 5.5mΩ
RDS(ON) < 7.5mΩ
(VGS = 4.5V)
(VGS = 10V)
100% UIS Tested!
100% Rg Tested!
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation B
C
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
A
11
IAR
42
A
EAR
88
mJ
42
2
W
1.2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
17
PDSM
TA=70°C
A
14
PD
TC=100°C
V
130
IDSM
TA=70°C
±20
43
IDM
TA=25°C
Continuous Drain
Current
Avalanche Current
C
Units
V
65
ID
TC=100°C
Maximum
30
RθJA
RθJC
Typ
24
53
2.6
°C
Max
30
64
3
Units
°C/W
°C/W
°C/W
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AON6426
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36.7
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.3
VGS=10V, VDS=5V
130
TJ=55°C
5
VGS=10V, ID=20A
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
100
nA
2.5
V
4.5
5.5
6.8
8.2
6
7.5
mΩ
1
V
40
A
A
Forward Transconductance
VDS=5V, ID=20A
53
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1930
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2300
pF
230
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
37
45
Qg(4.5V) Total Gate Charge
18
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, ID=20A
pF
290
2.1
Gate Source Charge
mΩ
S
1.4
Qgs
0.7
µA
1.8
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
IDSS
ID(ON)
Max
Ω
nC
nC
4.8
nC
11
nC
8.1
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
8.6
ns
29
ns
8
ns
IF=20A, dI/dt=500A/µs
14
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
40
17
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 2 : Nov-10
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON6426
130
120
110
100
90
80
70
60
50
40
30
20
10
0
80
10V
VDS=5V
70
4.5
60
5V
4V
50
ID(A)
ID (A)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
125°C
VGS=3.5V
25°C
10
0
0
1
2
3
4
0
5
1
8
4
5
Normalized On-Resistance
2
7
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
6
5
4
VGS=10V
3
1.8
VGS=10V
ID=20A
1.6
17
5
VGS=4.5V 2
ID=20A
10
1.4
1.2
1
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
16
1.0E+02
ID=20A
14
1.0E+01
40
12
1.0E+00
10
IS (A)
RDS(ON) (mΩ )
2
125°C
8
1.0E-01
1.0E-02
6
125°C
1.0E-03
4
25°C
25°C
1.0E-04
2
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=20A
2400
Capacitance (pF)
VGS (Volts)
8
2700
6
4
Ciss
2100
1800
1500
1200
Coss
900
600
2
300
0
5
10
15
20
25
30
35
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
40
RDS(ON)
limited
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
10.0
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
160
10µs
Power (W)
10µs
100.0
ID (Amps)
5
30
200
1000.0
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
1
VDS (Volts)
10
100
10
0
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
Crss
0
0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
40
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AON6426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
120
80
TA=100°C
60
TA=150°C
40
TA=125°C
20
40
30
20
10
0
0
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
80
10000
60
1000
Power (W)
Current rating ID(A)
TA=25°C
40
10
20
1
1E05
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
Zθ JA Normalized Transient
Thermal Resistance
17
5
2
10
100
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
1E- 0.001 0.01
04
0.1
1
10
100 1000
0
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=64°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
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AON6426
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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