Datasheet

AON6428
30V N-Channel MOSFET
General Description
Product Summary
The AON6428 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
ID (at VGS=10V)
VDS
30V
43A
RDS(ON) (at VGS=10V)
< 10mΩ
RDS(ON) (at VGS= 4.5V)
< 14.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
80
11
IDSM
TA=70°C
±20
27
IDM
TA=25°C
Units
V
43
ID
TC=100°C
Maximum
30
A
8
Avalanche Current C
IAR
45
A
Repetitive avalanche energy L=0.05mH C
TC=25°C
EAR
51
mJ
Power Dissipation B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 6: Novl 2011
2
Steady-State
Steady-State
RθJA
RθJC
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W
1.3
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
12
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
30
PD
Typ
21
50
3.5
°C
Max
25
60
4.2
Units
°C/W
°C/W
°C/W
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AON6428
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
80
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
±100
nA
1.7
2.2
V
8.3
10
12.4
15
11.3
14.5
A
gFS
Forward Transconductance
VDS=5V, ID=20A
43
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS(th)
VGS=0V, VDS=15V, f=1MHz
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
mΩ
mΩ
S
1
V
35
A
770
pF
240
pF
77
pF
0.8
1.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14.8
17.8
nC
Qg(4.5V) Total Gate Charge
7.1
8.5
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
0.4
nC
2.2
nC
3.1
nC
5
ns
3
ns
18
ns
tf
Turn-Off Fall Time
3
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
23
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Nov 2011
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Page 2 of 6
AON6428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
80
10V
7V
70
4.5V
60
4V
40
ID(A)
50
ID (A)
VDS=5V
50
40
3.5V
30
30
20
20
125°C
0
0
0
1
2
3
4
5
0
2
3
4
5
1.8
Normalized On-Resistance
16
14
VGS=4.5V
12
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
8
VGS=10V
6
4
1.6
VGS=10V
ID=20A
1.4
17
5
2
10
=4.5V
1.2
VGS
ID=20A
1
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
35
ID=20A
30
1.0E+01
40
1.0E+00
25
20
IS (A)
RDS(ON) (mΩ
Ω)
25°C
10
VGS=3V
10
125°C
15
1.0E-02
10
1.0E-03
5
125°C
1.0E-01
25°C
1.0E-04
25°C
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 6: Nov 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=20A
8
1000
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
800
600
200
0
Crss
0
0
2
4
6
8
10
12
14
Qg (nC)
Figure 7: Gate-Charge Characteristics
16
0
10µs
100.0
RDS(ON)
1ms
1.0
DC
10ms
TJ(Max)=150°C
TC=25°C
Power (W)
100µs
0.1
160
TJ(Max)=150°C
TC=25°C
120
17
5
2
10
10µs
10.0
80
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
10
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
30
40
0.0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
ID (Amps)
Coss
400
40
RθJC=4.2°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: Nov 2011
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Page 4 of 6
AON6428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
100
Power Dissipation (W)
TA=25°C
IAR (A) Peak Avalanche Current
80
TA=100°C
TA=150°C
60
40
30
20
10
TA=125°C
20
0
0
0.000001
0
0.00001
0.0001tA (s)
0.001
Time in avalanche,
Figure12:SinglePulseAvalanche capability(Note C)
50
75
100
125
150
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
10000
50
TA=25°C
40
1000
Power (W)
Current rating ID(A)
25
30
20
17
5
2
10
100
10
10
1
0
0
Zθ JA Normalized Transient
Thermal Resistance
10
1
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
150
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 6: Nov 2011
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Page 5 of 6
AON6428
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 6: Nov 2011
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6