Reliability Report

AOS Semiconductor
Product Reliability Report
AON6454A,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AON6454A. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AON6454A passes AOS quality
and reliability requirements. The released product will be categorized by the process family and
be routine monitored for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Reliability Stress Test Summary and Results
Reliability Evaluation
I. Product Description:
The AON6454A combines advanced trench MOSFET technology with a low resistance package
to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Details refer to the datasheet.
II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond
Mold Material
Moisture Level
AON6454A
Standard sub-micron
150V N-Channel MOSFET
DFN5x6
Bare Cu
Solder Paste
Cu Clip
Epoxy resin with silica filler
Level 1
2
III. Reliability Stress Test Summary and Results
Test Item
Test Condition
Time Point
Total
Sample
Size
Number
of
Failures
Reference
Standard
HTGB
Temp = 150°C ,
Vgs=100% of Vgsmax
168 / 500 /
1000 hours
1155 pcs
0
JESD22-A108
HTRB
Temp = 150°C ,
Vds=80% of Vdsmax
168 / 500 /
1000 hours
1155 pcs
0
JESD22-A108
MSL
Precondition
168hr 85°C / 85%RH +
3 cycle reflow@260°C
(MSL 1)
-
4158 pcs
0
JESD22-A113
96 hours
1155 pcs
0
JESD22-A110
1000 hours
462 pcs
0
JESD22-A101
130°C , 85%RH,
33.3 psia,
Vds = 80% of Vdsmax
up to 42V
85°C , 85%RH,
Vds = 80% of Vdsmax
up to 100V
HAST
H3TRB
Autoclave
121°C , 29.7psia,
RH=100%
96 hours
1155 pcs
0
JESD22-A102
Temperature
Cycle
-65°C to 150°C ,
air to air,
250 / 500 /
1000 cycles
1155 pcs
0
JESD22-A104
HTSL
Temp = 150°C
1000 hrs
693 pcs
0
JESD22-A103
Power
15000
231 pcs
0
AEC Q101
Tj = 100°C
cycles
Cycling
Note: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 1.53
MTTF = 74799 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.53
9
MTTF = 10 / FIT = 74799 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from burn-in tests
H = Duration of burn-in testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
259
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
130 deg C
150 deg C
2.59
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