LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY(0.56Inch) LFD591/22-XX/SP8 DATA SHEET DOC. NO : QW0905- LFD591/22-XX/SP8 REV. : A DATE : 06 - Mar. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LFD591/22-XX/SP8 Package Dimensions 1.2 50.5 (1.99") DIG.1 DIG.2 DIG.3 14.22 (0.56") DIG.4 19.0 (0.748") 90° ±10° ψ1.6(0.063") Ø0.7 TYP LFD591/22-XX/SP8 LIGITEK 9.2 A 2.54X11= 27.94(1.1") F E 8.0(0.315") B G C D DP 3.0±0.5 PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 12.0 MIN LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LFD591/22-XX/SP8 Internal Circuit Diagram LFD5912-XX/SP8 LFD5922-XX/SP8 A DIG.1 B C D 12 E F G DP 11 7 4 2 1 10 5 3 A DIG.2 B C D 9 E F G DP A DIG.1 B C D 12 E F G DP 11 7 4 2 1 10 5 3 A DIG.2 B C D 9 E F G DP A DIG.3 B C D 8 E F G DP A DIG.3 B C D 8 E F G DP A DIG.4 B C D 6 E F G DP A DIG.4 B C D 6 E F G DP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD591/22-XX/SP8 Page 3/7 Electrical Connection PIN NO. LFD5912-XX/SP8 PIN NO. LFD5922-XX/SP8 1. Anode E 1. Cathode E 2. Anode D 2. Cathode D 3. Anode DP 3. Cathode DP 4. Anode C 4. Cathode C 5. Anode G 5. Cathode G 6. Common Cathode Dig.4 6. Common Anode Dig.4 7. Anode B 7. Cathode B 8. Common Cathode Dig.3 8. Common Anode Dig.3 9. Common Cathode Dig.2 9. Common Anode Dig.2 10. Anode F 10. Cathode F 11. Anode A 11. Cathode A 12. Common Cathode Dig.1 12. Common Anode Dig.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LFD591/22-XX/SP8 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT G Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO △λ (nm) (nm) Vf(v) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LFD5912-XX/SP8 GaP LFD5922-XX/SP8 Electrical λP 565 Green 30 1.7 2.1 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 1.75 3.05 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LFD591/22-XX/SP8 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LFD591/22-XX/SP8 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 2.0 1.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity @20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 Fig.6 Directive Radiation 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LFD591/22-XX/SP8 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11