BAS16 series High-speed switching diodes Rev. 6 — 24 September 2014 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAS16 SOT23 - TO-236AB single small BAS16H SOD123F - - single small and flat lead BAS16J SOD323F SC-90 - single very small and flat lead BAS16L SOD882 - - single leadless ultra small BAS16T SOT416 SC-75 - single ultra small BAS16VV SOT666 - - triple isolated ultra small and flat lead BAS16VY SOT363 SC-88 - triple isolated very small BAS16W SOT323 SC-70 - single very small BAS316 SOD323 SC-76 - single very small BAS516 SOD523 SC-79 - single ultra small and flat lead 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Repetitive peak reverse voltage: VRRM 100 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching Low capacitance Reverse voltage: VR 100 V Small SMD plastic packages BAS16 series NXP Semiconductors High-speed switching diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VR reverse voltage - - 100 V IR reverse current VR = 80 V - - 0.5 A trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 ; IR(meas) = 1 mA - - 4 ns 2. Pinning information Table 3. Pin Pinning Description Simplified outline Graphic symbol BAS16; BAS16T; BAS16W 1 anode 2 not connected 3 cathode 3 3 1 2 006aaa764 1 2 006aaa144 BAS16H; BAS16J; BAS316; BAS516 1 cathode 2 anode [1] 1 2 2 1 006aab040 001aab540 BAS16L 1 cathode 2 anode [1] 1 2 1 2 006aab040 Transparent top view BAS16VV; BAS16VY 1 anode (diode 1) 2 anode (diode 2) 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 6 cathode (diode 1) 6 5 1 2 4 3 001aab555 6 5 1 2 4 3 006aab106 [1] BAS16_SER Product data sheet The marking bar indicates the cathode. All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 2 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAS16 TO-236AB plastic surface-mounted package; 3 leads SOT23 BAS16H - plastic surface-mounted package; 2 leads SOD123F BAS16J SC-90 plastic surface-mounted package; 2 leads SOD323F BAS16L DFN1006-2 leadless ultra small plastic package; 2 terminals; body 1.0 0.6 0.5 mm SOD882 BAS16T SC-75 plastic surface-mounted package; 3 leads SOT416 BAS16VV - plastic surface-mounted package; 6 leads SOT666 BAS16VY SC-88 plastic surface-mounted package; 6 leads SOT363 BAS16W SC-70 plastic surface-mounted package; 3 leads SOT323 BAS316 SC-76 plastic surface-mounted package; 2 leads SOD323 BAS516 SC-79 plastic surface-mounted package; 2 leads SOD523 Table 5. Marking codes 4. Marking Type number Marking code[1] BAS16 A6* BAS16H A1 BAS16J AR BAS16L S2 BAS16T A6 BAS16VV 53 BAS16VY 16* BAS16W A6* BAS316 A6 BAS516 6 [1] * = placeholder for manufacturing site code 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode BAS16_SER Product data sheet VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 3 of 21 BAS16 series NXP Semiconductors High-speed switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IF forward current Conditions Min Max Unit BAS16 [1] - 215 mA BAS16H BAS16L [2] - 215 mA BAS16T [1] - 155 mA [1][3] - 200 mA BAS16W [1] - 175 mA BAS16J BAS316 BAS516 [1] - 250 mA - 500 mA tp = 1 s - 4 A tp = 1 ms - 1 A tp = 1 s - 0.5 A BAS16VV BAS16VY IFRM repetitive peak forward current tp 0.5 ms; 0.25 IFSM non-repetitive peak forward current square wave; Tj(init) = 25 °C total power dissipation Ptot BAS16 Tamb 25 C [1] - 250 mW BAS16H Tamb 25 C [2] - 380 mW [5] - 830 mW BAS16J Tamb 25 C [5] - 550 mW BAS16L Tamb 25 C [2] - 250 mW BAS16T Tsp 90 C [1][4] - 170 mW BAS16VV Tamb 25 C [1][3] - 180 mW BAS16VY Tsp 85 C [1][3][6] - 250 mW BAS16W Tamb 25 C [1] - 200 mW BAS316 Tsp 90 C [1][4] - 400 mW BAS516 Tsp 90 C [1][4] - 500 mW Per device Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C [1] BAS16_SER Product data sheet Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 m copper strip line. [3] Single diode loaded. [4] Soldering point of cathode tab. [5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [6] Soldering points at pins 4, 5 and 6. All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 4 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Unit - - 500 K/W BAS16H [2] - - 330 K/W [3] - - 150 K/W BAS16J [3] - - 230 K/W BAS16L [2] - - 500 K/W [2][4] - - 700 K/W [3][4] - - 410 K/W [1] - - 625 K/W - - 330 K/W - - 70 K/W thermal resistance from junction to solder point BAS16 BAS16H [5] BAS16J [5] BAS16T BAS16VY [4][6] BAS16W Product data sheet Max [1] BAS16W BAS16_SER Typ BAS16 BAS16VV Rth(j-sp) Min - - 55 K/W - - 350 K/W - - 260 K/W - - 300 K/W BAS316 [5] - - 150 K/W BAS516 [5] - - 120 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 m copper strip line. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Single diode loaded. [5] Soldering point of cathode tab. [6] Soldering points at pins 4, 5 and 6. All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 5 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V Per diode VF IR Cd Product data sheet IF = 150 mA - - 1.25 V VR = 25 V - - 30 nA VR = 80 V - - 0.5 A VR = 25 V; Tj = 150 C - - 30 A VR = 80 V; Tj = 150 C - - 50 A BAS16; BAS16H; BAS16J; BAS16L; BAS16T; BAS16VV; BAS16VY; BAS16W; BAS316 - - 1.5 pF BAS516 - - 1 pF - - 4 ns - - 1.75 V reverse current diode capacitance f = 1 MHz; VR = 0 V trr reverse recovery time VFR forward recovery voltage IF = 10 mA; tr = 20 ns [1] BAS16_SER [1] forward voltage IF = 10 mA; IR = 10 mA; RL = 100 ; IR(meas) = 1 mA Pulse test: tp 300 s; 0.02. All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 6 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 006aab132 103 IF (mA) mbg704 102 IFSM (A) 102 10 10 1 (1) (2) (3) (4) 1 10−1 10−1 0 0.2 0.4 0.6 0.8 1.0 1 1.2 1.4 VF (V) 10 102 103 104 tp (μs) (1) Tamb = 150 C Based on square wave currents. (2) Tamb = 85 C Tj(init) = 25 C (3) Tamb = 25 C (4) Tamb = 40 C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. 006aab133 102 IR (μA) 10 (1) 1 (2) Non-repetitive peak forward current as a function of pulse duration; maximum values mbg446 0.8 Cd (pF) 0.6 10−1 0.4 (3) 10−2 10−3 0.2 10−4 (4) 10−5 0 0 20 40 60 80 0 100 4 8 VR (V) (1) Tamb = 150 C 12 VR (V) 16 f = 1 MHz; Tamb = 25 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = 40 C Fig 3. Reverse current as a function of reverse voltage; typical values BAS16_SER Product data sheet Fig 4. Diode capacitance as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 7 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005 Fig 6. Forward recovery voltage test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 8 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 9. Package outline 3.0 2.8 1.7 1.5 1.1 0.9 1.2 1.0 1 3 0.55 0.35 0.45 0.15 2.5 1.4 2.1 1.2 3.6 3.4 1 2 0.48 0.38 1.9 04-11-04 Package outline BAS16 (SOT23/TO-236AB) 1.35 1.15 2 0.15 0.09 Dimensions in mm Fig 7. 2.7 2.5 0.70 0.55 Dimensions in mm Fig 8. 04-11-29 Package outline BAS16H (SOD123F) 0.80 0.65 2 0.30 0.22 2.7 2.3 0.50 0.46 0.62 0.55 0.5 0.3 1 0.25 0.10 1.8 1.6 1.02 0.95 0.65 0.30 0.22 1 2 Dimensions in mm Fig 9. 0.55 0.47 0.25 0.10 0.40 0.25 04-09-13 Package outline BAS16J (SOD323F/SC-90) Dimensions in mm 03-04-17 Fig 10. Package outline BAS16L (SOD882/DFN1006-2) 1.7 1.5 0.95 0.60 1.8 1.4 3 cathode marking on top side (if applicable) 6 0.45 0.15 0.6 0.5 5 4 0.3 0.1 1.75 0.9 1.45 0.7 1.7 1.5 1.3 1.1 pin 1 index 1 2 1 0.30 0.15 0.25 0.10 1 Dimensions in mm Product data sheet 3 0.27 0.17 0.18 0.08 1 04-11-04 Fig 11. Package outline BAS16T (SOT416/SC-75) BAS16_SER 2 0.5 Dimensions in mm 04-11-08 Fig 12. Package outline BAS16VV (SOT666) All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 9 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 2.2 1.8 0.45 0.15 4 2.2 1.35 2.0 1.15 2 1 3 0.3 0.2 0.65 2 0.25 0.10 0.4 0.3 1.3 06-03-16 Fig 13. Package outline BAS16VY (SOT363) 1.35 1.15 Dimensions in mm 04-11-04 Fig 14. Package outline BAS16W (SOT323/SC-70) 0.85 0.75 1.1 0.8 0.45 0.15 1 1.65 1.25 1.55 1.15 2 2 0.40 0.25 0.25 0.10 0.34 0.26 03-12-17 Fig 15. Package outline BAS316 (SOD323/SC-76) BAS16_SER Product data sheet 0.65 0.58 1 1.8 1.6 Dimensions in mm 0.25 0.10 1.3 Dimensions in mm 2.7 2.3 0.45 0.15 3 pin 1 index 1 1.1 0.8 Dimensions in mm 0.17 0.11 02-12-13 Fig 16. Package outline BAS516 (SOD523/SC-79) All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 10 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB) BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 11 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Dimensions in mm Fig 19. Reflow soldering footprint BAS16H (SOD123F) 3.05 2.2 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 0.5 (2×) 0.6 (2×) Dimensions in mm sod323f_fr Fig 20. Reflow soldering footprint BAS16J (SOD323F) BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 12 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 1.3 R0.05 (8×) 0.7 solder lands solder resist 0.6 0.7 0.8 (2×) (2×) (2×) 0.9 solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) 0.5 (2×) sod882_fr Fig 21. Reflow soldering footprint BAS16L (SOD882/DFN1006-2) 2.2 1.7 solder lands solder resist 1 0.85 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75) BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 13 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) placement area 0.55 (2×) solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 23. Reflow soldering footprint BAS16VV (SOT666) 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) 0.6 (4×) occupied area Dimensions in mm 1.8 sot363_fr Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88) BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 14 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88) 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 1.3 1 0.5 (3×) solder paste occupied area Dimensions in mm 0.55 (3×) sot323_fr Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70) BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 15 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70) 3.05 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 2.2 0.5 (2×) 0.6 (2×) Dimensions in mm sod323_fr Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76) BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 16 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 5 2.9 1.5 (2×) solder lands solder resist occupied area 2.75 1.2 (2×) Dimensions in mm preferred transport direction during soldering sod323_fw Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76) 2.15 1.4 solder lands solder resist 0.5 0.6 (2×) (2×) 1.2 solder paste occupied area Dimensions in mm 0.4 (2×) 0.5 (2×) sod523_fr Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79) BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 17 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS16_SER_6 20140924 Product data sheet - BAS16_SER_5 Modifications: • • • • • Section 1.2 “Features and benefits”: updated Section 4 “Marking”: updated Table 6 “Limiting values”: updated Section 8 “Test information”: updated Section 12 “Legal information”: updated BAS16_SER_5 20080825 Product data sheet - BAS16_4 BAS16H_1 BAS16J_1 BAS16L_1 BAS16T_1 BAS16VV_BAS16VY_3 BAS16W_4 BAS316_4 BAS516_1 BAS16_4 20011010 Product specification - BAS16_3 BAS16H_1 20050415 Product data sheet - - BAS16J_1 20070308 Product data sheet - - BAS16L_1 20030623 Product specification - - BAS16T_1 19980120 Product specification - - BAS16VV_BAS16VY_3 20070420 Product data sheet - BAS16VV_BAS16VY_2 BAS16W_4 19990506 Product specification - BAS16W_3 BAS316_4 20040204 Product specification - BAS316_3 BAS516_1 19980831 Product specification - - BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 18 of 21 BAS16 series NXP Semiconductors High-speed switching diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BAS16_SER Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 19 of 21 BAS16 series NXP Semiconductors High-speed switching diodes No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 12.4 Trademarks Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAS16_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 September 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 20 of 21 NXP Semiconductors BAS16 series High-speed switching diodes 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Contact information. . . . . . . . . . . . . . . . . . . . . 20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2014. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 September 2014 Document identifier: BAS16_SER