Data Sheet

BAV70 series
High-speed switching diodes
Rev. 8 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
NXP
JEITA
Package
configuration
JEDEC
Configuration
BAV70
SOT23
-
TO-236AB small
dual common cathode
BAV70M
SOT883
SC-101
-
leadless ultra
small
dual common cathode
BAV70S
SOT363
SC-88
-
very small
quadruple common
cathode/common cathode
BAV70T
SOT416
SC-75
-
ultra small
dual common cathode
BAV70W
SOT323
SC-70
-
very small
dual common cathode
1.2 Features and benefits
 High switching speed: trr  4 ns
 Low leakage current
 Small SMD plastic packages
 Low capacitance: Cd  1.5 pF
 Reverse voltage: VR  100 V
 AEC-Q101 qualified
1.3 Applications
 High-speed switching
 General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
IR
reverse current
VR = 80 V
-
-
0.5
A
VR
reverse voltage
-
-
100
V
-
-
4
ns
Per diode
trr
[1]
reverse recovery time
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
BAV70 series
NXP Semiconductors
High-speed switching diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
BAV70; BAV70T; BAV70W
1
anode (diode 1)
2
anode (diode 2)
3
common cathode
3
3
1
2
006aaa144
1
2
006aab034
BAV70M
1
anode (diode 1)
2
anode (diode 2)
1
3
common cathode
2
3
3
Transparent
top view
1
2
006aab034
BAV70S
1
anode (diode 1)
2
anode (diode 2)
3
common cathode (diode 3
and diode 4)
4
anode (diode 3)
5
anode (diode 4)
6
6
5
4
1
2
3
6
5
1
2
4
3
006aab104
common cathode (diode 1
and diode 2)
3. Ordering information
Table 4.
Ordering information
Type number
BAV70_SER
Product data sheet
Package
Name
Description
Version
BAV70
-
plastic surface-mounted package; 3 leads
SOT23
BAV70M
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0  0.6  0.5 mm
SOT883
BAV70S
SC-88
plastic surface-mounted package; 6 leads
SOT363
BAV70T
SC-75
plastic surface-mounted package; 3 leads
SOT416
BAV70W
SC-70
plastic surface-mounted package; 3 leads
SOT323
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
BAV70
A4*
BAV70M
S4
BAV70S
A4*
BAV70T
A4
BAV70W
A4*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VRRM
repetitive peak reverse
voltage
-
100
V
VR
reverse voltage
-
100
V
IF
forward current
IFRM
BAV70
Tamb  25 C
-
215
mA
BAV70M
Ts = 90 C
-
150
mA
BAV70S
Ts = 60 C
-
250
mA
BAV70T
Ts = 90 C
-
150
mA
BAV70W
Tamb  25 C
-
175
mA
BAV70
-
450
mA
BAV70M
-
500
mA
BAV70S
-
450
mA
BAV70T
-
500
mA
-
500
mA
repetitive peak forward
current
BAV70W
IFSM
BAV70_SER
Product data sheet
non-repetitive peak forward square wave
current
tp = 1 s
[1]
-
4
A
tp = 1 ms
-
1
A
tp = 1 s
-
0.5
A
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Ptot
Parameter
Conditions
Min
Max
Unit
-
250
mW
[2]
total power dissipation
BAV70
Tamb  25 C
BAV70M
Tamb  25 C
-
250
mW
BAV70S
Ts = 60 C
-
350
mW
BAV70T
Ts = 90 C
-
170
mW
BAV70W
Tamb  25 C
-
200
mW
BAV70
Tamb  25 C
-
125
mA
BAV70M
Ts = 90 C
-
75
mA
BAV70S
Ts = 60 C
-
100
mA
BAV70T
Ts = 90 C
-
75
mA
BAV70W
Tamb  25 C
-
100
mA
[3]
Per device
forward current
IF
Tj
junction temperature
-
150
C
Tamb
ambient temperature
65
+150
C
Tstg
storage temperature
65
+150
C
[1]
Tj = 25 C prior to surge.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3]
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
-
-
500
K/W
Per diode
Rth(j-a)
[1]
BAV70
[2]
BAV70M
BAV70W
Rth(j-t)
Rth(j-sp)
BAV70_SER
Product data sheet
-
-
500
K/W
-
-
625
K/W
thermal resistance from
junction to tie-point
BAV70
-
-
360
K/W
BAV70W
-
-
300
K/W
thermal resistance from
junction to solder point
BAV70S
-
-
255
K/W
BAV70T
-
-
350
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
-
-
1
V
IF = 150 mA
-
-
1.25
V
VR = 25 V
-
-
30
nA
VR = 80 V
-
-
0.5
A
VR = 25 V; Tj = 150 C
-
-
30
A
VR = 80 V; Tj = 150 C
-
-
100
A
VR = 0 V; f = 1 MHz
-
-
1.5
pF
reverse recovery time
[2]
-
-
4
ns
forward recovery voltage
[3]
-
-
1.75
V
Per diode
VF
IR
Cd
trr
VFR
[1]
BAV70_SER
Product data sheet
[1]
forward voltage
reverse current
diode capacitance
Pulse test: tp  300 s;   0.02.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
[3]
When switched from IF = 10 mA; tr = 20 ns.
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
006aab107
103
IF
(mA)
mbg704
102
IFSM
(A)
102
10
10
1
(1)
(2)
(3)
(4)
1
10−1
10−1
0.2
0.6
1.0
1
1.4
10
102
103
104
tp (μs)
VF (V)
(1) Tamb = 150 C
Based on square wave currents.
(2) Tamb = 85 C
Tj = 25 C; prior to surge
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
006aab108
102
IR
(μA)
10
(1)
1
(2)
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg446
0.8
Cd
(pF)
0.6
10−1
0.4
(3)
10−2
10−3
0.2
10−4
(4)
10−5
0
0
20
40
60
80
0
100
4
8
VR (V)
(1) Tamb = 150 C
12
VR (V)
16
f = 1 MHz; Tamb = 25 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 3.
Reverse current as a function of reverse
voltage; typical values
BAV70_SER
Product data sheet
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
6 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
8. Test information
tr
tp
t
D.U.T.
10 %
+ IF
IF
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
(1)
90 %
VR
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle  = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5.
Reverse recovery time test circuit and waveforms
I
1 kΩ
RS = 50 Ω
D.U.T.
450 Ω
I
V
90 %
OSCILLOSCOPE
VFR
Ri = 50 Ω
10 %
t
tr
t
tp
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp  100 ns; duty cycle   0.005
Fig 6.
Forward recovery voltage test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
9. Package outline
3.0
2.8
0.62
0.55
0.55
0.47
1.1
0.9
3
3
0.30
0.22
0.45
0.15
0.50
0.46
2.5 1.4
2.1 1.2
1
0.30
0.22
2
0.48
0.38
1.9
0.15
0.09
Package outline BAV70 (SOT23/TO-236AB)
2.2
1.8
2.2 1.35
2.0 1.15
Package outline BAV70M (SOT883/SC-101)
0.95
0.60
1.8
1.4
3
0.45
0.15
1.75 0.9
1.45 0.7
2
1.3
03-04-03
0.45
0.15
4
1
3
2
0.30
0.15
0.25
0.10
0.3
0.2
Dimensions in mm
Fig 9.
Fig 8.
pin 1
index
0.65
Dimensions in mm
1.1
0.8
5
1
1
0.20
0.12
04-11-04
6
2
0.35
Dimensions in mm
Fig 7.
1.02
0.95
0.65
0.25
0.10
1
14-10-03
Dimensions in mm
Package outline BAV70S (SOT363/SC-88)
04-11-04
Fig 10. Package outline BAV70T (SOT416/SC-75)
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig 11. Package outline BAV70W (SOT323/SC-70)
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
8 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3 000
10 000
BAV70
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
BAV70M
SOT883
2 mm pitch, 8 mm tape and reel
-
-315
BAV70S
SOT363
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
BAV70T
SOT416
4 mm pitch, 8 mm tape and reel
-115
-135
BAV70W
SOT323
4 mm pitch, 8 mm tape and reel
-115
-135
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 12. Reflow soldering footprint BAV70 (SOT23/TO-236AB)
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
9 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 13. Wave soldering footprint BAV70 (SOT23/TO-236AB)
1.3
0.7
R0.05 (12×)
solder lands
solder resist
0.9
0.6
0.7
solder paste
0.25
(2×)
occupied area
0.3
(2×)
0.3
0.4
(2×)
0.4
Dimensions in mm
sot883_fr
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint BAV70M (SOT883/SC-101)
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
10 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 15. Reflow soldering footprint BAV70S (SOT363/SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 16. Wave soldering footprint BAV70S (SOT363/SC-88)
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
11 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
2.2
0.6
1.1
0.7
2
2.0
3
0.85
1.5
0.5
(3x)
1
0.6
(3x)
msa438
1.9
solder lands
solder resist
Dimensions in mm
solder paste
occupied area
Fig 17. Reflow soldering footprint BAV70T (SOT416/SC-75)
2.65
0.75
1.325
1.30
solder lands
2
solder paste
0.60
2.35 0.85
(3×)
0.50
(3×) 1.90
3
solder resist
occupied area
1
Dimensions in mm
0.55
(3×)
2.40
msa429
Fig 18. Reflow soldering footprint BAV70W (SOT323/SC-70)
4.60
4.00
1.15
2
3.65
2.10
3
2.70
solder lands
1
0.90
(2×)
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
msa419
Fig 19. Wave soldering footprint BAV70W (SOT323/SC-70)
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
12 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAV70_SER v.8
20150318
Product data sheet
-
BAV70_SER_7
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BAV70_SER_7
20071127
Product data sheet
-
BAV70_6
BAV70S_2
BAV70T_3
BAV70W_6
BAV70_6
20020403
Product specification
-
BAV70_5
BAV70S_2
19971021
Product specification
-
BAV70S_1
BAV70T_3
20040204
Product specification
-
BAV70T_2
BAV70W_6
20020405
Product specification
-
BAV70W_5
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
13 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BAV70_SER
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
14 of 16
BAV70 series
NXP Semiconductors
High-speed switching diodes
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
15 of 16
NXP Semiconductors
BAV70 series
High-speed switching diodes
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 March 2015
Document identifier: BAV70_SER
Similar pages