Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 Unit : mm 4.0±0.2 Not soldered For light source of VCR (VHS System) 1.8±0.2 Two-way directivity 15.3±1.0 High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package 4.0±0.2 1.0 3.3 Features 1.0 6.0±0.2 ø2.5±0.2 2-R1.25±0.1 2-0.8 max. 2-0.5±0.1 0.5±0.1 Long lifetime, high reliability 1 Long lead wire type (LNA2702L) 2 2.54 C0.5 1: Anode 2: Cathode Applications Power dissipation 1.8±0.2 Not soldered 4.0±0.2 Ratings Unit PD 75 mW IF 50 mA Pulse forward current IFP* 1 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Tstg – 40 to +100 2-R1.25±0.1 2-0.8 max. 16.6 1.0 Symbol Forward current (DC) Storage temperature * ø2.5±0.2 2-0.5±0.1 33.7±0.5 3.5 Absolute Maximum Ratings (Ta = 25˚C) Parameter LNA2702L 6.0±0.2 4.0±0.2 3.3 1.0 Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 0.5±0.1 2-0.7 max. 2-0.5±0.1 1 ˚C 2 2.54 C0.5 f = 100 Hz, Duty cycle = 0.1 % 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol Conditions min typ max Unit P O* IF = 50mA Peak emission wavelength λP IF = 20mA 950 nm Spectral half band width ∆λ IF = 20mA 50 nm Forward voltage (DC) VF IF = 50mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz Radiant power 1.8 mW 35 1.5 V 10 µA pF Radiant power PO shows each value of radiant flux P1 and P2 in two directions. P1 P2 1 Infrared Light Emitting Diodes LN59, LN2702L IF — Ta IFP — Duty Cycle 10 2 Ta = 25˚C 30 20 10 IF (mA) Pulse forward current 40 Allowable forward current tw = 10µs Ta = 25˚C Forward current 50 1 10 –1 60 50 40 30 20 10 10 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) ∆PO — IFP 10 –1 10 –2 10 –1 1.2 10mA 0.8 0.4 0 – 40 1 Pulse forward current IFP (A) λP — Ta 1000 0 40 Relative radiant intensity (%) Peak emission wavelength λP (nm) 940 920 80 120 IF = 20mA 10 2 10 – 40 0 40 Spectral characteristics Directivity characteristics 60˚ IF = 20mA Ta = 25˚C 50˚ 40˚ 80 30˚ 20˚ 60 10˚ 70˚ 80˚ 90˚ 100˚ 110˚ 120˚ 130˚ 80 60 40 20 0˚ 20 40 40 60 20 0 40 80 Ambient temperature Ta (˚C ) 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm) 140˚ 150˚ 160˚ 170˚ 180˚ 80 900 – 40 80 Ambient temperature Ta (˚C ) IF = 20mA 960 1.6 Ambienttemperature Ta (˚C ) 100 980 1.2 ∆PO — Ta 1mA (2) 0.8 10 3 IF = 50mA (1) VF (V) 10 10 –2 10 –3 0.4 VF — Ta (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 0 Forward voltage VF (V) 1.6 Forward voltage Relative radiant power ∆PO 10 2 0 10 2 10 Duty cycle (%) Relative radiant intensity (%) 0 Relative radiant power ∆PO 0 – 25 2 IF — VF 80 70 IFP (A) IF (mA) 60