Chinese (simplified)/English

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
J
VCES = 1200V
IC nom = 75A / ICRM = 150A
典型应用
• 三电平应用
• 太阳能应用
TypicalApplications
• 3-level-applications
• Solarapplications
电气特性
• 高速IGBTH3
• 低电感设计
• 低开关损耗
• 低VCEsat
ElectricalFeatures
• HighspeedIGBTH3
• Lowinductivedesign
• Lowswitchinglosses
• LowVCEsat
机械特性
• 3kV交流1分钟绝缘
• 低热阻的三氧化二铝(Al2O3衬底
• 紧凑型设计
• PressFIT压接技术
• 集成的安装夹使安装坚固
MechanicalFeatures
• 3kVAC1mininsulation
• Al2O3substratewithlowthermalresistance
• Compactdesign
• PressFITcontacttechnology
• Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
IGBT,T1-T4/IGBT,T1-T4
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
集电极电流
Implementedcollectorcurrent
VCES
1200
V
ICN
75
A
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
30
45
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
150
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
275
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,45
1,55
1,60
1,70
V
V
V
5,80
6,50
V
栅极阈值电压
Gatethresholdvoltage
IC = 2,60 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,57
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
4,40
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,235
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGon = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGon = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGoff = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGoff = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 30 A, VCE = 400 V, LS = 40 nH
Tvj = 25°C
VGE = 15 V, di/dt = 2600 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 6,8 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,00
0,03
0,03
0,03
µs
µs
µs
0,01
0,012
0,012
µs
µs
µs
0,25
0,32
0,34
µs
µs
µs
0,025
0,04
0,045
µs
µs
µs
Eon
0,40
0,60
0,70
mJ
mJ
mJ
IC = 30 A, VCE = 400 V, LS = 40 nH
Tvj = 25°C
VGE = 15 V, du/dt = 2400 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 6,8 Ω
Tvj = 150°C
Eoff
1,05
1,60
1,75
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
270
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
tP ≤ 10 µs, Tvj = 150°C
td on
tr
td off
tf
RthJC
2
0,500 0,550 K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
0,450
Tvj op
-40
K/W
150
°C
二极管,D1/D4/Diode,D1/D4
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
VRRM Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
1200
V
IF
30
A
IFRM
50
A
I²t
90,0
75,0
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
2,40
VF
1,85
1,90
1,90
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
72,0
80,0
82,0
A
A
A
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)
VR = 400 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
2,35
2,85
3,70
µC
µC
µC
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)
VR = 400 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,80
1,30
1,35
mJ
mJ
mJ
正向电压
Forwardvoltage
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)
VR = 400 V
VGE = -15 V
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,950 1,05 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,850
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
3
-40
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
IGBT,T2/T3/IGBT,T2/T3
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
650
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
30
45
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
60
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
150
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,55
1,70
1,80
2,00
V
V
V
5,80
6,50
V
栅极阈值电压
Gatethresholdvoltage
IC = 0,30 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,30
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
1,65
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,051
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGon = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGon = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGoff = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGoff = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 30 A, VCE = 400 V, LS = 40 nH
Tvj = 25°C
VGE = 15 V, di/dt = 2600 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 10 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
4,90
0,022
0,025
0,025
µs
µs
µs
0,01
0,012
0,012
µs
µs
µs
0,16
0,18
0,185
µs
µs
µs
0,025
0,037
0,04
µs
µs
µs
Eon
0,34
0,50
0,53
mJ
mJ
mJ
IC = 30 A, VCE = 400 V, LS = 40 nH
Tvj = 25°C
VGE = 15 V, du/dt = 4700 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 10 Ω
Tvj = 150°C
Eoff
0,85
1,15
1,20
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
210
150
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,900 1,00 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,850
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
td on
tr
td off
tf
Tvj op
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
4
-40
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
二极管,D2/D3/Diode,D2/D3
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
30
A
IFRM
60
A
I²t
130
115
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
1,65
VF
1,45
1,35
1,30
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
42,0
48,0
50,0
A
A
A
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)
VR = 400 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
1,80
2,40
2,60
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)
VR = 400 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,45
0,65
0,73
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,00
1,20 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,700
K/W
正向电压
Forwardvoltage
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)
VR = 400 V
恢复电荷
Recoveredcharge
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
V
V
V
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TNTC = 25°C
R100偏差
DeviationofR100
TNTC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TNTC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
5
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
AI2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
10,0
5,0
mm
> 200
相对电痕指数
Comperativetrackingindex
VISOL CTI
min.
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
nH
RCC'+EE'
RAA'+CC'
5,00
6,00
mΩ
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
40
重量
Weight
G
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
6
max.
30
-40
preparedby:CM
typ.
LsCE
Tstg
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
kV
3,0
24
125
°C
80
N
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
输出特性IGBT,T1-T4(典型)
outputcharacteristicIGBT,T1-T4(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,T1-T4(典型)
outputcharacteristicIGBT,T1-T4(typical)
IC=f(VCE)
Tvj=150°C
60
60
50
50
40
40
IC [A]
IC [A]
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
30
30
20
20
10
10
0
0,0
0,5
1,0
1,5
2,0
0
2,5
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
0,0
0,5
1,0
VCE [V]
传输特性IGBT,T1-T4(典型)
transfercharacteristicIGBT,T1-T4(typical)
IC=f(VGE)
VCE=20V
2,5
3,0
50
60
3,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
50
2,5
40
2,0
E [mJ]
IC [A]
2,0
开关损耗IGBT,T1-T4(典型)
switchinglossesIGBT,T1-T4(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=6.8Ω,RGoff=6.8Ω,VCE=400V
60
30
1,0
10
0,5
5
6
7
8
9
0,0
10
VGE [V]
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
7
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
1,5
20
0
1,5
VCE [V]
0
10
20
30
IC [A]
40
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
开关损耗IGBT,T1-T4(典型)
switchinglossesIGBT,T1-T4(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=30A,VCE=400V
瞬态热阻抗IGBT,T1-T4
transientthermalimpedanceIGBT,T1-T4
ZthJH=f(t)
4,0
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
ZthJH : IGBT
ZthJH [K/W]
E [mJ]
3,0
2,0
1
1,0
i:
1
2
3
4
ri[K/W]: 0,032 0,062 0,312 0,543
τi[s]:
0,0005 0,005 0,05 0,2
0,0
0
10
20
30
40
RG [Ω]
50
60
0,1
0,001
70
反偏安全工作区IGBT,T1-T4(RBSOA)
reversebiassafeoperatingareaIGBT,T1-T4(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=6.8Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,D1/D4(典型)
forwardcharacteristicofDiode,D1/D4(typical)
IF=f(VF)
70
50
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
45
60
40
50
35
30
IF [A]
IC [A]
40
30
25
20
15
20
10
10
5
0
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
8
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
开关损耗二极管,D1/D4(典型)
switchinglossesDiode,D1/D4(typical)
Erec=f(IF)
RGon=10Ω,VCE=400V
开关损耗二极管,D1/D4(典型)
switchinglossesDiode,D1/D4(typical)
Erec=f(RG)
IF=30A,VCE=400V
2,0
1,6
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,8
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,4
1,6
1,2
1,4
1,0
E [mJ]
E [mJ]
1,2
1,0
0,8
0,8
0,6
0,6
0,4
0,4
0,2
0,2
0,0
0
5
0,0
10 15 20 25 30 35 40 45 50 55 60
IF [A]
瞬态热阻抗二极管,D1/D4
transientthermalimpedanceDiode,D1/D4
ZthJH=f(t)
0
10
20
30
40
50 60
RG [Ω]
70
80
90
100
输出特性IGBT,T2/T3(典型)
outputcharacteristicIGBT,T2/T3(typical)
IC=f(VCE)
VGE=15V
10
60
ZthJH: Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
54
48
42
IC [A]
ZthJH [K/W]
36
1
30
24
18
12
i:
1
2
3
4
ri[K/W]: 0,15
0,323 0,739 0,588
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
6
0
10
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
9
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
输出特性IGBT,T2/T3(典型)
outputcharacteristicIGBT,T2/T3(typical)
IC=f(VCE)
Tvj=150°C
传输特性IGBT,T2/T3(典型)
transfercharacteristicIGBT,T2/T3(typical)
IC=f(VGE)
VCE=20V
60
60
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
54
48
42
42
36
36
IC [A]
IC [A]
48
30
30
24
24
18
18
12
12
6
6
0
0,0
0,5
1,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
54
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
0
5,0
开关损耗IGBT,T2/T3(典型)
switchinglossesIGBT,T2/T3(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=10Ω,RGoff=10Ω,VCE=400V
5
6
7
8
9
VGE [V]
10
11
12
开关损耗IGBT,T2/T3(典型)
switchinglossesIGBT,T2/T3(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=30A,VCE=400V
2,5
4,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
3,5
2,0
3,0
2,5
E [mJ]
E [mJ]
1,5
1,0
2,0
1,5
1,0
0,5
0,5
0,0
0
10
20
30
IC [A]
40
50
0,0
60
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
10
0
10
20
30
40
50 60
RG [Ω]
70
80
90
100
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
瞬态热阻抗IGBT,T2/T3
transientthermalimpedanceIGBT,T2/T3
ZthJH=f(t)
反偏安全工作区IGBT,T2/T3(RBSOA)
reversebiassafeoperatingareaIGBT,T2/T3(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=10Ω,Tvj=150°C
10
70
ZthJH: IGBT
IC, Modul
IC, Chip
60
40
IC [A]
ZthJH [K/W]
50
1
30
20
10
i:
1
2
3
4
ri[K/W]: 0,142 0,309 0,719 0,58
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
0
10
正向偏压特性二极管,D2/D3(典型)
forwardcharacteristicofDiode,D2/D3(typical)
IF=f(VF)
0
100
200
300
400
VCE [V]
500
600
700
开关损耗二极管,D2/D3(典型)
switchinglossesDiode,D2/D3(typical)
Erec=f(IF)
RGon=6.8Ω,VCE=400V
60
1,00
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
55
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,90
50
0,80
45
0,70
40
0,60
E [mJ]
IF [A]
35
30
25
0,50
0,40
20
0,30
15
0,20
10
0,10
5
0
0,0
0,5
1,0
VF [V]
1,5
0,00
2,0
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
11
0
10
20
30
IF [A]
40
50
60
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
开关损耗二极管,D2/D3(典型)
switchinglossesDiode,D2/D3(typical)
Erec=f(RG)
IF=30A,VCE=400V
瞬态热阻抗二极管,D2/D3
transientthermalimpedanceDiode,D2/D3
ZthJH=f(t)
0,90
10
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,80
ZthJH: Diode
0,70
ZthJH [K/W]
E [mJ]
0,60
0,50
0,40
1
0,30
0,20
i:
1
2
3
4
ri[K/W]: 0,25
0,3
0,5 0,65
τi[s]:
0,0005 0,005 0,05 0,2
0,10
0,00
0
10
20
30
RG [Ω]
40
50
0,1
0,001
60
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TNTC [°C]
120
140
160
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
12
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
接线图/Circuitdiagram
J
封装尺寸/Packageoutlines
Infineon
preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
13
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
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Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandany
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preparedby:CM
dateofpublication:2016-04-04
approvedby:AKDA
revision:V3.2
14
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