技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF200R12KT3_E 62mmC-SerienModulmitgemeinsamenEmitter 62mmC-seriesmodulewithcommonemitter 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1200 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC 200 295 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 400 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 150°C Ptot 1050 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues min. 集电极－发射极饱和电压 Collector-emittersaturationvoltage IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V 栅极阈值电压 Gatethresholdvoltage IC = 8,00 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge Tvj = 25°C Tvj = 125°C VCE sat A A typ. max. 1,70 1,90 2,15 V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 1,90 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 3,8 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 14,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,50 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 3,6 Ω Tvj = 25°C Tvj = 125°C td on 0,16 0,17 µs µs 上升时间(电感负载) Risetime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 3,6 Ω Tvj = 25°C Tvj = 125°C tr 0,04 0,045 µs µs 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 3,6 Ω Tvj = 25°C Tvj = 125°C td off 0,45 0,52 µs µs 下降时间(电感负载) Falltime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 3,6 Ω Tvj = 25°C Tvj = 125°C tf 0,10 0,16 µs µs 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 200 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, di/dt = 4000 A/µs RGon = 3,6 Ω Tvj = 25°C Tvj = 125°C Eon 10,0 15,0 mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 200 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, du/dt = 4500 V/µs RGoff = 3,6 Ω Tvj = 25°C Tvj = 125°C Eoff 16,5 25,0 mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt ISC 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,03 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-11-04 approvedby:WR revision:2.0 1 tP ≤ 10 µs, Tvj = 125°C 800 A 0,12 K/W K/W 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF200R12KT3_E 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM 1200 V IF 200 A IFRM 400 A I²t 7800 A²s 特征值/CharacteristicValues min. typ. max. 1,65 1,65 2,15 正向电压 Forwardvoltage IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V Tvj = 25°C Tvj = 125°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 200 A, - diF/dt = 4000 A/µs (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V IRM 150 190 A A 恢复电荷 Recoveredcharge IF = 200 A, - diF/dt = 4000 A/µs (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Qr 20,0 36,0 µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 200 A, - diF/dt = 4000 A/µs (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Erec 9,00 17,0 mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,06 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-11-04 approvedby:WR revision:2.0 2 V V 0,20 K/W K/W 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF200R12KT3_E 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) 爬电距离 Creepagedistance VISOL 2,5 kV Cu Al2O3 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 29,0 23,0 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 23,0 11,0 mm 相对电痕指数 Comperativetrackingindex CTI > 400 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个模块/permodule λPaste=1W/(m·K)/λgrease=1W/(m·K) 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting min. typ. RthCH 0,01 LsCE 20 nH RCC'+EE' 0,70 mΩ Tstg -40 125 °C 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm 端子联接扭距 Terminalconnectiontorque 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 - 5,0 Nm 重量 Weight G 340 g preparedby:MK dateofpublication:2013-11-04 approvedby:WR revision:2.0 3 max. K/W 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF200R12KT3_E 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125°C 400 400 Tvj = 25°C Tvj = 125°C 320 320 280 280 240 240 200 200 160 160 120 120 80 80 40 40 0 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 360 IC [A] IC [A] 360 1,5 VCE [V] 2,0 2,5 0 3,0 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=3.6Ω,RGoff=3.6Ω,VCE=600V 400 60 Tvj = 25°C Tvj = 125°C 360 Eon, Tvj = 125°C Eoff, Tvj = 125°C 50 320 280 40 E [mJ] IC [A] 240 200 30 160 20 120 80 10 40 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:MK dateofpublication:2013-11-04 approvedby:WR revision:2.0 4 0 50 100 150 200 IC [A] 250 300 350 400 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF200R12KT3_E 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=200A,VCE=600V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 100 1 Eon, Tvj = 125°C Eoff, Tvj = 125°C 90 ZthJC : IGBT 80 70 0,1 ZthJC [K/W] E [mJ] 60 50 40 0,01 30 20 i: 1 2 3 4 ri[K/W]: 0,00228 0,00683 0,06045 0,05044 τi[s]: 0,00001187 0,002364 0,02601 0,06499 10 0 0 4 8 12 16 20 RG [Ω] 24 28 32 0,001 0,001 36 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=3.6Ω,Tvj=125°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 450 400 IC, Modul IC, Chip 400 360 Tvj = 25°C Tvj = 125°C 320 350 280 300 IF [A] IC [A] 240 250 200 200 160 150 120 100 80 50 0 40 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:MK dateofpublication:2013-11-04 approvedby:WR revision:2.0 5 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF200R12KT3_E 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=3.6Ω,VCE=600V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=200A,VCE=600V 24 24 Erec, Tvj = 125°C 20 20 16 16 E [mJ] E [mJ] Erec, Tvj = 125°C 12 12 8 8 4 4 0 0 50 100 150 200 IF [A] 250 300 350 0 400 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJC=f(t) 1 ZthJC [K/W] ZthJC : Diode 0,1 i: 1 2 3 4 ri[K/W]: 0,00378 0,01136 0,10088 0,08398 τi[s]: 0,00001187 0,002364 0,02601 0,06499 0,01 0,001 0,01 0,1 t [s] 1 10 preparedby:MK dateofpublication:2013-11-04 approvedby:WR revision:2.0 6 0 4 8 12 16 20 RG [Ω] 24 28 32 36 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF200R12KT3_E 初步数据 PreliminaryData 接线图/circuit_diagram_headline 封装尺寸/packageoutlines j j n n i i preparedby:MK dateofpublication:2013-11-04 approvedby:WR revision:2.0 7 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF200R12KT3_E 初步数据 PreliminaryData 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货 如果有必要，请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权 Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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