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技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT3_E
62mmC-SerienModulmitgemeinsamenEmitter
62mmC-seriesmodulewithcommonemitter
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
200
295
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
400
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Ptot
1050
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
min.
集电极-发射极饱和电压
Collector-emittersaturationvoltage
IC = 200 A, VGE = 15 V
IC = 200 A, VGE = 15 V
栅极阈值电压
Gatethresholdvoltage
IC = 8,00 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
Tvj = 25°C
Tvj = 125°C
VCE sat
A
A
typ.
max.
1,70
1,90
2,15
V
V
VGEth
5,0
5,8
6,5
V
VGE = -15 V ... +15 V
QG
1,90
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
3,8
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
14,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,50
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
td on
0,16
0,17
µs
µs
上升时间(电感负载)
Risetime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
tr
0,04
0,045
µs
µs
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
td off
0,45
0,52
µs
µs
下降时间(电感负载)
Falltime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
tf
0,10
0,16
µs
µs
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 200 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, di/dt = 4000 A/µs
RGon = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
Eon
10,0
15,0
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 200 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, du/dt = 4500 V/µs
RGoff = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
Eoff
16,5
25,0
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,03
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.0
1
tP ≤ 10 µs, Tvj = 125°C
800
A
0,12 K/W
K/W
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT3_E
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 1200
V
IF
200
A
IFRM
400
A
I²t
7800
A²s
特征值/CharacteristicValues
min.
typ.
max.
1,65
1,65
2,15
正向电压
Forwardvoltage
IF = 200 A, VGE = 0 V
IF = 200 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 200 A, - diF/dt = 4000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
IRM
150
190
A
A
恢复电荷
Recoveredcharge
IF = 200 A, - diF/dt = 4000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Qr
20,0
36,0
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 200 A, - diF/dt = 4000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Erec
9,00
17,0
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,06
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.0
2
V
V
0,20 K/W
K/W
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT3_E
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 2,5
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
29,0
23,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
23,0
11,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
min.
typ.
RthCH
0,01
LsCE
20
nH
RCC'+EE'
0,70
mΩ
Tstg
-40
125
°C
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
2,5
-
5,0
Nm
重量
Weight
G
340
g
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.0
3
max.
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT3_E
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
400
400
Tvj = 25°C
Tvj = 125°C
320
320
280
280
240
240
200
200
160
160
120
120
80
80
40
40
0
0,0
0,5
1,0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
360
IC [A]
IC [A]
360
1,5
VCE [V]
2,0
2,5
0
3,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=3.6Ω,RGoff=3.6Ω,VCE=600V
400
60
Tvj = 25°C
Tvj = 125°C
360
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
50
320
280
40
E [mJ]
IC [A]
240
200
30
160
20
120
80
10
40
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.0
4
0
50
100
150
200
IC [A]
250
300
350
400
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT3_E
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=200A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
100
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
90
ZthJC : IGBT
80
70
0,1
ZthJC [K/W]
E [mJ]
60
50
40
0,01
30
20
i:
1
2
3
4
ri[K/W]: 0,00228
0,00683 0,06045 0,05044
τi[s]:
0,00001187 0,002364 0,02601 0,06499
10
0
0
4
8
12
16
20
RG [Ω]
24
28
32
0,001
0,001
36
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=3.6Ω,Tvj=125°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
450
400
IC, Modul
IC, Chip
400
360
Tvj = 25°C
Tvj = 125°C
320
350
280
300
IF [A]
IC [A]
240
250
200
200
160
150
120
100
80
50
0
40
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.0
5
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT3_E
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=3.6Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=200A,VCE=600V
24
24
Erec, Tvj = 125°C
20
20
16
16
E [mJ]
E [mJ]
Erec, Tvj = 125°C
12
12
8
8
4
4
0
0
50
100
150
200
IF [A]
250
300
350
0
400
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
1
ZthJC [K/W]
ZthJC : Diode
0,1
i:
1
2
3
4
ri[K/W]: 0,00378
0,01136 0,10088 0,08398
τi[s]:
0,00001187 0,002364 0,02601 0,06499
0,01
0,001
0,01
0,1
t [s]
1
10
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.0
6
0
4
8
12
16
20
RG [Ω]
24
28
32
36
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT3_E
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
j
j
n
n
i
i
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.0
7
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT3_E
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
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havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
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preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.0
8
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