Transistors with built-in Resistor UNR412x Series (UN412x Series) Silicon PNP epitaxial planar type Unit: mm For digital circuits 4.0±0.2 ■ Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • New S type package, allowing supply with the radial taping ■ Resistance by Part Number • • • • • • UNR4121 UNR4122 UNR4123 UNR4124 UNR412X UNR412Y (UN4121) (UN4122) (UN4123) (UN4124) (UN412X) (UN412Y) (R1) 2.2 kΩ 4.7 kΩ 10 kΩ 2.2 kΩ 0.27 kΩ 3.1 kΩ (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 5 kΩ 4.6 kΩ 0.45+0.20 –0.10 0.45+0.20 –0.10 (2.5) (2.5) 0.7±0.1 1 2 1: Emitter 2: Collector 3: Base NS-B1 Package 3 Internal Connection ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −500 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C R1 C B R2 E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 Conditions −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 ICEO VCE = −50 V, IB = 0 IEBO VEB = −6 V, IC = 0 UNR4121 Max Unit V V −1 µA −1 µA − 0.5 UNR412X Emitter-base Typ − 0.1 UNR412X Collector-emitter cutoff current (Base open) Min −5 cutoff current UNR4122/412X/412Y −2 (Collector open) UNR4123/4124 −1 mA Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00019BED 1 UNR412x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Forward current UNR4121 transfer ratio hFE Conditions VCE = −10 V, IC = −100 mA Min UNR4122/412Y 50 UNR4123/4124 60 UNR412X Typ Max Unit 40 20 Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −5 mA − 0.25 UNR412X IC = −10 mA, IB = − 0.3 mA − 0.25 UNR412Y IC = −50 mA, IB = −5 mA − 0.15 Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 500 Ω Output voltage low-level VOL VCC = −5 V, VB = −3.5 V, RL = 500 Ω Transition frequency fT VCB = −10 V, IE = 50 mA, f = 200 MHz Input resistance UNR4121/4124 R1 −4.9 V − 0.2 200 −30% 2.2 UNR4122 4.7 UNR4123 10 UNR412X 0.27 UNR412Y 3.1 Resistance ratio R1/R2 V MHz +30% kΩ 0.8 1.0 1.2 UNR4124 0.17 0.22 0.27 UNR412X 0.043 0.054 0.065 UNR412Y V 0.67 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJH00019BED UNR412x Series Characteristics charts of UNR4121 VCE(sat) IC Collector current IC (mA) −200 IB = −1.0 mA −160 −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −1 Ta = 75°C 25°C 300 Ta = 75°C 200 100 25°C −10 −25°C −100 0 −1 −1 000 Collector current IC (mA) −10 6 4 −1 000 VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 8 −100 Collector current IC (mA) IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob VCE = −10 V −25°C − 0.01 −1 Cob VCB 10 400 IC / IB = 10 −10 Collector-emitter voltage VCE (V) 12 hFE IC − 0.1 − 0.2 mA −40 Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −100 Forward current transfer ratio hFE IC VCE −240 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 2 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR4122 VCE(sat) IC Ta = 25°C Collector current IC (mA) −250 IB = −1.0 mA − 0.9 mA −200 − 0.8 mA − 0.7 mA −150 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA −100 − 0.2 mA −50 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −1 160 −25°C −10 −100 Collector current IC (mA) SJH00019BED −1 000 VCE = −10 V Forward current transfer ratio hFE IC VCE −300 Ta = 75°C 120 25°C 80 −25°C 40 0 −1 −10 −100 −1 000 Collector current IC (mA) 3 UNR412x Series IO VIN 16 12 8 VO = −5 V Ta = 25°C −103 −100 −102 −10 VO = − 0.2 V Ta = 25°C −10 Input voltage VIN (V) 20 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 24 −1 − 0.1 4 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR4123 IC VCE VCE(sat) IC Collector current IC (mA) −200 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −160 −120 − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 −1 Ta = 75°C 25°C − 0.1 −10 −100 −104 0 −1 −1 000 8 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 12 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 4 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 4 50 IO VIN 16 −25°C 100 Collector current IC (mA) Cob VCB 20 150 −25°C − 0.01 −1 f = 1 MHz IE = 0 Ta = 25°C Ta = 75°C VCE = −10 V 25°C Collector-emitter voltage VCE (V) 24 hFE IC 200 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −100 −240 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00019BED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR412x Series Characteristics charts of UNR4124 VCE(sat) IC Collector current IC (mA) −250 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −200 −150 − 0.5 mA − 0.4 mA −100 − 0.3 mA − 0.2 mA −50 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −100 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −1 −10 −100 Ta = 75°C 200 100 0 −1 −1 000 16 12 8 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 25°C −25°C IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 Collector current IC (mA) Cob VCB 20 VCE = −10 V −25°C Collector-emitter voltage VCE (V) 24 hFE IC 400 Forward current transfer ratio hFE IC VCE −300 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 4 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR412X Ta = 25°C Collector current IC (mA) −200 IB = −1.6 mA −160 −1.4 mA −1.2 mA −120 −1.0 mA − 0.8 mA −80 − 0.6 mA − 0.4 mA −40 − 0.2 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 VCE(sat) IC hFE IC −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −1 240 IC / IB = 10 Forward current transfer ratio hFE IC VCE −240 −10 –25°C −100 Collector current IC (mA) SJH00019BED −1 000 VCE = −10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −1 −10 −100 −1 000 Collector current IC (mA) 5 UNR412x Series VIN IO −100 f = 1 MHz IE = 0 Ta = 25°C 20 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 24 16 12 8 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 4 0 −1 −10 −100 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Collector-base voltage VCB (V) Characteristics charts of UNR412Y VCE(sat) IC Collector current IC (mA) −200 IB = −1.2 mA −160 −1.0 mA − 0.8 mA −120 − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −100 −1 Ta = 75°C − 0.1 − 0.01 −1 −100 −1 000 −100 16 12 8 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 4 0 −1 −10 −100 − 0.01 − 0.1 −1 −10 Output current IO (mA) SJH00019BED VCE = −10 V 200 Ta = 75°C 160 25°C 120 −25°C 80 40 0 −1 −10 −100 Collector current IC (mA) Collector current IC (mA) Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 VIN IO f = 1 MHz IE = 0 Ta = 25°C Collector-base voltage VCB (V) 6 25°C −25°C Cob VCB 20 IC / IB = 10 −10 Collector-emitter voltage VCE (V) 24 hFE IC 240 Forward current transfer ratio hFE IC VCE −240 −100 −1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export 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